排序方式: 共有3条查询结果,搜索用时 15 毫秒
1
1.
The poor film formation of CdSe/ZnS quantum dots (QDs) during spin-coating makes a substantial impact on the device performance of quantum dot light-emitting diodes (QLEDs). This work proposes a method to improve the morphology of the quantum dot light-emitting layer (EML) by adding small organic molecular 4,4''-Bis(9H-carbazol-9-yl) biphenyl (CBP) into the layer. Its surface roughness reduces from 6.21 nm to 2.71 nm, which guarantees a good contact between hole transport layer (HTL) and EML. Consequently, the CdSe/ZnS QDs:CBP based QLED achieves maximum external quantum efficiency (EQE) of 5.86%, and maximum brightness of 10 363 cd/m2. It is demonstrated that the additive of small organic molecules could be an effective way to improve the brightness and the efficiency of QLEDs. 相似文献
2.
By spin-coating silver nanowires(AgNWs) and polymethyl methacrylate(PMMA), applying pressure imprint and plasma treatment, we obtained flat Ag NW thin film with a sheet resistance of 20 Ω/sq and a transmittance of 78% at 550 nm with low surface roughness. No significant change in sheet resistance was observed after cyclic bending(bending radius is 5 mm) test and tape test. After 1 000 bending tests, the change rate of sheet resistance was only 8.3%. The organic light-emitting devices(OLEDs) were prepared by using such Ag NW electrodes and a maximum brightness of 5 090 cd/m2 was obtained. Compared with the Ag NWs electrode without any treatment, the present Ag NW electrodes have lower sheet resistance and better hole injection. Our results show spin-coated with flat layers, embossed and plasma-treated Ag NW electrodes are suitable for manufacturing flexible organic optoelectronic devices. 相似文献
3.
1