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利用卢瑟福背散射（ＲＢＳ）、Ｘ光电子谱（ＸＰＳ）和俄歇电子能谱（ＡＥＳ）分析，研究了Ｓｉ０．５Ｇｅ０．５合金在１０００℃下湿氧化所生成的氧化物的特征．结果表明：这种氧化物为双层结构．靠近表面的一层为（Ｓｉ，Ｆｅ）Ｏｘ混合层，在其下面是纯的ＳｉＯｘ层，Ｇｅ被排斥并堆积在ＳｉＯｘ／Ｓｉ０．５Ｇｅ０．５界面附近．在本实验条件下，（Ｓｉ，Ｇｅ）Ｏｘ层的厚度约为２５００Ａ，它的形成时间不足５分种．当氧化的时间延长时，ＳｉＯｘ的厚度随之增加，但（Ｓｉ，Ｇｅ）Ｏｘ的厚度几乎不变．还发现：在这些氧化物中，Ｓｉ２ｐ和Ｇｅ３ 相似文献
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Small discs of type HR- 1 austenitic steel (OCr17Ni14MnMo) have been irradiated with 30-170 keV He+ for doses 1015- 1×1018/cm2 at 300K. 2.5 MeV enhanced proton backscattering, TEM, SEM and CEMS are used to investigate the He trapping, bubble structures and the phase stability. It is found that a maximum He concentration of -28 at. % was obtained after implantation with 70 keV He+ at a dose just below critical. The micro- Vickers hardnesses of irradiated layers decrease with increasing dose, particularly when dense bubbles formed. The isomer shift of CEMS increases in the negative direction after irradiation. The austenite is believed to be stable against radiation induced martensitic transformation. 相似文献
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