Ga2O3缓冲层厚度对柔性衬底沉积Cu/ITO薄膜性能的影响

Cu and Cu/ITO films were prepared on polyethylene terephthalate （PET） substrates with a Ga2O3 buffer layer using radio frequency （RF） and direct current （DC） magnetron sputtering. The effect of Cu layer thickness on the optical and electrical properties of the Cu film deposited on a PET substrate with a Ga2O3 buffer layer was studied, and an appropriate Cu layer thickness of 4.2 nm was obtained. Changes in the optoelectrical properties of Cu（4.2 nm）/ITO（30 nm） films were investigated with respect to the Ga2O3 buffer layer thickness. The optical and electrical properties of the Cu/ITO films were significantly influenced by the thickness of the Ga2O3 buffer layer. A maximum transmission of 86%, sheet resistance of 45 Ω/□ and figure of merit of 3.96 × 10^-3 Ω^ -1 were achieved for Cu（4.2 nm）/ITO（30 nm） films with a Ga2O3 layer thickness of 15 nm.     

用第一性原理研究Sn掺杂 Ga1.375In0.625O3的电子结构和导电性

用第一性原理计算了Sn 替位Ga1.375In0.625O3化合物的Ga 原子(Ga1.25In0.625Sn0.125O3)和Sn 替位Ga1.375In0.625O3化合物的In原子(Ga1.375In0.5Sn0.125O3)的结构、电子能带和态密度。Ga1.25In0.625Sn0.125O3半导体材料比Ga1.375In0.5Sn0.125O3材料具有大的晶格参数和强的Sn–O离子键。在Sn掺杂 Ga1.375In0.625O3化合物中,Sn 原子优先取代In 原子。Sn掺杂 Ga1.375In0.625O3化合物显示n型导电性, 杂质能带主要由Sn 5s 态组成。Ga1.375In0.5Sn0.125O3化合物的光学带隙大于Ga1.25In0.625Sn0.125O3化合物的光学带隙。 Ga1.25In0.625Sn0.125O3 具有小的电子有效质量和大的电子迁移率,Ga1.375In0.5Sn0.125O3 具有多的相对电子数和好的导电性。