一种全集成高电源抑制比的低压差线性稳压器

This paper presents a capacitor-free CMOS low dropout voltage regulator which has high PSR perfor- mance and low chip area. Pole splitting and gm boosting techniques are employed to achieve good stability. The capacitor-free chip LDO was fabricated in commercial 0.18μm CMOS technology provided by GSMC （Shanghai, China）. Measured results show that the capacitor-free LDO has a stable output voltage 1.79 V, when supply voltage changes from 2.5 to 5 V, and the LDO is capable of driving maximum 100 mA load current. The LDO has high power supply rejection about -79 dB at low frequency and -40 dB at 1 MHz frequency, while sacrifice of the LDO＇s active chip-area is only smaller than 0.02 mm2.     

低功耗CMOS视觉传感器新结构及其SOC实现

提出了一种新型单片CMOS摄像传感器电路的体系结构,该结构集成了摄像、噪声消除、模数转换、图像处理、图像增强、色彩空间转变等功能.采用该结构实现的CMOS视觉芯片动态范围大,在弱光和强光下均能拍摄图像;工作在30帧的情况下,消耗的功耗只有75 mW,具有低功耗的优点.基于该单芯片低功耗CMOS视觉传感器芯片开发的系统元器件少,可广泛应用于手机拍照、数码相机和网络视频等多媒体终端.     

计算VLSI电容方法的研究

讨论了几种VLSI版图中电容的计算方法;计算集成电路电容的方法有公式法和数值法两大类。利用数值法计算电容的方法包含有限差分法、有限元法、边界元法和格林法等,分析了以上各种方法的计算原理和优缺点。