排序方式: 共有20条查询结果,搜索用时 31 毫秒
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介绍了一种基于0.35μmGeSi-BiCMOS工艺的1GSPS采样/保持电路。该电路采用全差分开环结构,使用局部反馈提高开环缓冲放大器的线性度;采用增益、失调数字校正电路补偿高频输入信号衰减和工艺匹配误差造成的失调。在1GS/s采样率、484.375MHz输入信号频率、3.3V电源电压下进行仿真。结果显示,电路的SFDR达到75.6dB,THD为-74.9dB,功耗87mW。将该采样/保持电路用于一个8位1GSPSA/D转换器。流片测试结果表明,在1GSPS采样率,240.123MHz和5.123MHz输入信号下,8位A/D转换器的SNR为41.39dB和43.19dB。 相似文献
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A digital calibration technique for an ultra high-speed folding and interpolating analog-to-digital converter in 0.18-μm CMOS technology is presented.The similar digital calibration techniques are taken for high 3-bit flash converter and low 5-bit folding and interpolating converter,which are based on well-designed calibration reference, calibration DAC and comparators.The spice simulation and the measured results show the ADC produces 5.9 ENOB with calibration disabled and 7.2 ENOB with calibration enabled for high-frequency wide-bandwidth analog input. 相似文献
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以滇中引水工程积福村输水梁式渡槽工程为背景,选取最高墩和最矮墩为研究对象,采用非线性时程分析法,计算分析了纵向、横向设计地震作用下,摩擦摆支座滑动面曲面半径R和摩擦系数μ对支座水平位移、墩底弯矩的影响。结果表明:(1)在水平地震作用下,在曲面半径R一定时,支座水平位移随着滑动摩擦系数μ的增大而减小;当μ值在0.02~0.04之间变化时影响最明显,μ值接近0.1时,支座位移趋于一致。(2)在纵向地震作用下,墩底弯矩随μ增大而增大。(3)在横向地震作用下,当R取2 m时,墩底横向弯矩随μ值增大而增大;当R值在3~10 m之间变化时,墩底横向弯矩则随μ值的增大而出现先减小后增大的趋势,存在明显的拐点。相关参数研究成果对摩擦摆支座设计制造具有重要参考价值。 相似文献
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A 2-Gsample/s 8-b analog-to-digital converter in 0.35μm BiCMOS process technology is presented. The ADC uses the unique folding and interpolating algorithm and dual-channel timing interleave multiplexing technology to achieve a sampling rate of 2 GSPS.Digital calibration technology is used for the offset and gain corrections of the S/H circuit,the offset correction of preamplifier,and the gain and clock phase corrections between channels.As a result of testing,the ADC achieves 7.32 ENOB at an analog input of 484 MHz and 7.1 ENOB at Nyquist input after the chip is self-corrected. 相似文献