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具有补偿埋层的槽型埋氧层SOI高压器件新结构 总被引:3,自引:3,他引:0
A new silicon-on-insulator(SOI) high-voltage MOSFET structure with a compensation layer on the trenched buried oxide layer(CL T-LDMOS) is proposed.The high density inverse interface charges at the top surface of the buried oxide layer(BOX) enhance the electric field in the BOX and a uniform surface electric field profile is obtained,which results in the enhancement of the breakdown voltage(BV).The compensation layer can provide additional P-type charges,and the optimal drift region concentration is increased in order to satisfy the reduced surface electric field(RESURF) condition.The numerical simulation results indicate that the vertical electric field in the BOX increases to 6 MV/cm and the B V of the proposed device increases by 300%in comparison to a conventional SOI LDMOS,while maintaining low on-resistance. 相似文献
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根据二维浅水波方程的特点,运用计算二维明渠非恒定流的格子Boltzmann模型;利用格子Boltzmann算法耦合度低和CUDA(Compute Unified Device Architecture)线程级并行的优势,在GPU(Graphic Processing Unit)上实现了该模型的并行求解.通过对一维溃坝波和二维渍坝波的模拟,验证了模型的正确性和GPU计算的可靠性与高效性.对比分析显示,该模型在GPU上并行计算的每秒格点演进数达数十亿,运算效率比在单核CPU上高出数百倍. 相似文献
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