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Two types of 5μm thick hybrid orientation structure wafers,which were integrated by(110)or(100) orientation silicon wafers as the substrate,have been investigated for 15-40 V voltage ICs and MEMS sensor applications.They have been obtained mainly by SOI wafer bonding and a non-selective epitaxy technique,and have been presented in China for the first time.The thickness of BOX SiO2 buried in wafer is 220 nm.It has been found that the quality of hybrid orientation structure with(100)wafer substrate is better than that with(110)wafer substrate by"Sirtl defect etching of HOSW". 相似文献
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A novel depletion-mode NJFET compatible high-voltage BiCMOS process is proposed and experimentally demonstrated with a four-branch 12-bit DAC(digital-to-analog converter).With this process,an NJFET with a pinch-off voltage ofabout-1.5 V and a breakdown voltage of about 16 V,an NLDDMOS(N-type lightly-dosed-drain in MOS) with a turn-on voltage of about 1.0 V and a breakdown voltage of about 35 V,and a Zener diode with a reverse voltage of about 5.6 V were obtained.Measurement results showed that the conver... 相似文献
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针对功率器件的抗辐射加固技术,从入射粒子对半导体材料的辐射损伤机理出发,设计了一种-150 V抗辐射P沟道VDMOS器件。该器件采取的抗辐射加固措施有:在颈区的上方形成局部厚场氧化层结构;在N体区进行高剂量离子注入掺杂;在850 ℃低温条件下生长栅氧化层。通过仿真分析和试验进行了验证,该器件在最劣漏偏置条件下抗总剂量达到3 kGy,抗单粒子烧毁和单粒子栅穿的LET值为99.1 MeV·cm2/mg。该器件适用于星用抗辐射DC-DC电源系统。 相似文献
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摘 要:本文提出了一种新型的兼容高压BiCMOS工艺的耗尽型NJFET,并实际研制了一种四路12位数模转换器。研制的NJFET夹断电压-1.5V,击穿电压17V;带轻掺杂漏区的高压NMOS管开启电压1.0V,击穿电压35V;齐纳二极管的正向电压5.5V。使用该耗尽型NJFET及其兼容工艺研制的四路12位数模转换器的基准温度系数为±25ppm/℃,微分误差小于±0.3LSB,线性误差小于±0.5LSB,还可以广泛应用于其他高压数模/模数转换器的研制。 相似文献
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