具有微米/纳米复合粗化ITO的GaN基LED

Three types of textured indium-tin-oxide （ITO） surface, including nano-texturing and hybrid micro/nano-texturing with micro-holes （concave-hybrid-pattem） or micro-pillars （convex-hybrid-pattern）, were applied to GaN-based light-emitting diodes （LEDs）. The nano-texturing was realized by maskless wet-etching, and the micro-texturing was achieved by standard photolithography and wet-etching. Compared to LED chips with flat ITO surface, those with nano-pattern, concave-hybrid-pattern, and convex-hybrid-pattern exhibit enhancement of 11.3%, 15.8%, and 17.9%, respectively, for the light-output powers at 20 mA. The electrical performance has no degradation. Moreover, the convex-hybrid-pattern show higher light-output efficiency under small injection current, while the concave-hybrid-pattern exhibit better light-output efficiency at large injection current. The light- extraction efficiency is simulated by use of two-dimensional finite difference time domain method, and the numer- ical results are consistent with the experiments.     

一起主变高压侧出线套筒油中含乙炔的分析处理

1 引言 广东湛江电厂2号主变型号为SFP9-360000/220TH,三相强迫油循环风冷,1996年投入运行.湛江电厂属靠海性电厂,对设备的防潮、防腐蚀要求很高.在主变220kV高压侧出线的布置上,没有采用户外式结构,而是采用户内式结构,即主变220kV高压侧出线装置高压套管虽然采用户外式套管,但在其外部仍用高压套筒罩在外面,里面充满油,油路与高压套管相互独立,不与变压器本体油路相同,高压套管与电缆终端头连接是通过过桥引线连接.     

水库除险加固中大坝贴坡技术的应用

本文以某工程为例,分析了水库除险加固中大坝贴坡技术的应用,希望可以提供一些有价值的参考意见。     

主变增容改造后的温升控制与温度监测问题分析及对策

为配合300 MW机组汽轮机通流部分和发电机的增容改造,须对主变进行配套增容改造。根据计算论证结果,该主变增容10%不需更换线圈,但存在容量增加后温度将升高的问题。现对主变增容后的温升控制与温度监测等问题进行分析,并提出了一定的对策。     

具有背面反射镜的GaN基高压LED

High-voltage light-emitting diodes （HV-LED） with backside reflector, including Ti305/SiO2 distributed Bragg reflector （DBR） or hybrid reflector combining DBR and Al or Ag metal layer, are investigated using Monte Carlo ray tracing method. The hybrid reflector leads to more enhancement of light-extraction efficiency （LEE）. Moreover, the LEE can also be improved by redesigning the thicknesses of DBR. HV-LED with four redesigned DBR pairs （4-MDBR）, and those with a hybrid reflector combining 4-MDBR and Al metal layer （4-MDBR-Al）, are fabricated. Compared to 4-MDBR, the enhancement of light-output power induced by 4-MDBR-A1 is 4.6%, which is consistent with the simulated value of 4.9%.