GaInAsP/InP异质结液相外延层晶格匹配的研究

正 (一)引言 GaxIn1-xAsyP1-y四元合金材料在很宽的组分变化范围内     

THE STUDY OF LATTICE MATCH IN GaInAsP/InP HETEROJUNCTION LPE LAYERS

The effects of the growth conditions of two-phase solution liquid phase epitaxy(LPE)(i.e.growth temperature,cooling rates and solution composition)on lattice mismatch and band-gapwavelength in GaInAsP/InP heterojunction LPE layers have been investigated by X-ray double-crystal diffractometry and double-beam spectrophotometry.The stress in the grown interface freeof misfit dislocations and lattice mismatch at growth temperature have been calculated.     

用X射线双晶及三晶衍射仪测量晶片的研磨和抛光损伤

介绍了用X射线双晶及三晶衍射仪检验半导体晶片研磨及抛光损伤的原理及方法.利用双晶衍射结合腐蚀剥层方法能够定量测定晶片研磨损伤层深度.提出用双晶及三晶衍射方法可以非破坏性地检验晶片的抛光质量,并能比较不同抛光工艺的效果.采用建议的三晶衍射方法检验多种不同晶片时,可以不必更换参考晶片,因而有迅速、方便的优点.