具有楔形多模干涉波导结构的大功率半导体激光器的研究

设计并制作了一种具有两段楔形（Taper）多模干涉波导（Multimode Interferometer Waveguide,MMI）级联的大功率半导体激光器。利用3D束传播算法（Beam Propagation Method,BPM）,模拟计算了光场在楔形多模干涉波导的传播和损耗,设计出器件的最佳尺寸。激光器材料采用小应变InGaAs/InGaAsP多量子阱有源区加InGaAsP（1.2Q）限制层的三明治结构,器件的制作则采用传统的F-P激光器的制作工艺。在25℃,加连续电流条件下,激光器的饱和输出功率达到32mW,饱和电流达到600mA,并实现稳定的单横模输出。相比于单脊窄条的F-P激光器（饱和输出功率9.8mW）、相同长度的矩形MMI级联的激光器（饱和输出功率21.8mW）,由于具有更大的有源区,楔形MMI级联的激光器具有较大的饱和输出功率、较小的电阻等特点。     

A high-power tapered and cascaded active multimode interferometer semiconductor laser diode

A high power semiconductor laser diode with a tapered and cascaded active multimode interferometer (MMI) cavity was designed and demonstrated.An output power as high as 32 mW was obtained for the novel laser diode with a tapered and cascaded active MMI cavity,being much higher than the 9.8 mW output power of the conventional single ridge F-P laser with the same material structure and the same device length due to the larger active area;and also being higher than the 21.2 mW output power of the rectangular and cascaded active MMI laser diode with nearly the same structure,except for the shape of the MMI area.In addition,the tapered and cascaded active multimode interferometer laser showed stable single mode outputs up to the maximum output power.