三组元光子晶体的宽带隙及缺陷模研究

运用时域有限差分(FDTD)方法计算了GaAs/玻璃/空气三组元光子晶体的透射频谱及缺陷模的传输特征,发现GaAs/玻璃/空气三组元体系的最低完全带隙宽度明显宽于玻璃/空气或GaAs/空气二组元体系,适当调整GaAs/玻璃比例可以得到宽带隙;光子晶体中的缺陷会形成局域模式,线型缺陷形成光波波导;设计适当的组合缺陷,并通过缺陷之间的耦合作用可以实现对光波传播的选择性输出.     

铝背场对单晶硅太阳电池输出特性的影响

利用PCID软件模拟了n~+/p-p~+结构的单晶硅太阳电池铝背场与硅片厚度对其输出特性的影响.结果表明,有铝背场时太阳电池获得明显的开路电压、短路电流以及光电转换效率的增益;硅片厚度越小,铝背场对其输出特性的影响越大;在有铝背场情况下,硅片厚度为120μm时,可获得最大的光电转换效率.

Abstract：

The PC1D was usecl to simulate the influence of Al-BSF and wafer thickness on electrical properties of n~+/p-p~+ structural monocrystalline silicon solar cells. It is found that solar cells with the Al-BSF structure can gain obvious open circuit voltage, short-circuit current, as well as photoelectric conversion efficiency; the smaller the wafer thickness is, the bigger of the effect of Al BSF works on the electrical properties; when the wafer thickness is 120 m, the solar cells can get the biggest photoelectric conversion efficiency.     

A study on the key factors affecting the electronic properties of monocrystalline silicon solar cells

The model of monocrystalline silicon solar cells is established,and the effects of wafer parameters,such as the p-Si（100） substrate thickness,the defect density,and the doping concentration,on the electronic properties of monocrystalline silicon solar cells are analyzed.The results indicate that the solar cells with an Al back-surface-field will have good electronic properties when the wafers meet the following three conditions：（i） the defect density is less than 1.0×1011 cm^-3;（ii） the doping concentration is from 5×10^15 cm^-3 to 1×10^17 cm^-3,i.e.the bulk resistivity is from 0.5 Ω·cm to 10 Ω·cm;（iii） the cells substrate thickness is in the range of 100 μm to 200 μm.     

单晶硅太阳电池背场欧姆接触的改善研究

采用磁控溅射在扩散工艺后的单晶硅片背面沉积了铝膜,对样品在600～900℃之间进行了快速热处理,利用四探针电阻测试仪、扫描电镜对热处理前后样品的电阻率、形貌等进行了表征,用半导体参数测试仪测量了样品的I-V曲线,计算了铝膜与硅片的接触电阻,并同步与印刷铝浆料样品进行了对比,研究表明,与丝网印刷工艺相比,溅射铝膜具有均匀细腻、电阻率低、接触电阻小等优点.