排序方式: 共有31条查询结果,搜索用时 15 毫秒
1.
2.
Monte Carlo simulations are adopted to study the electron transport porcess in the non-uniform electric field.Some important parameters of electrons in diamond films dynamic process at low temperature via EACVD such as angle distribution,energy distribution,average energy of electrons are given.The results indicate that the electron scattering near the substrate is mainly of a large-angle scattering,exhibiting a double-peaking distribution .All of the conclusions provide some theoretical data referential to the vapor dynamic model of diamond film growth at low temperature via EACVD. 相似文献
3.
4.
5.
应用磁控溅射法制备Ni-Al和Pt薄膜,溶胶-凝胶法制备P(VDF-TrFE)铁电共聚物薄膜,在SiO2/Si(001)衬底上首次构架了Pt/P(VDF-TrFE)/Ni-Al异质结电容器。X射线衍射(XRD)结果表明:Ni-Al薄膜为非晶结构,P(VDF-TrFE)薄膜具有较好的结晶质量。研究发现,在20 Hz测试频率下,Pt/P(VDF-TrFE)/Ni-Al电容器具有饱和的电滞回线,在90 V驱动电压下,剩余极化强度与矫顽场分别为7.6μC/cm2和45.7 V。在外加电压为40 V时,薄膜的漏电流密度约为5.37×10-6 A/cm2。漏电机制研究表明,Pt/P(VDF-TrFE)/Ni-Al电容器满足欧姆导电机制。铁电电容器经过109极化反转后没有发现明显的疲劳现象。 相似文献
6.
7.
8.
9.
Al,Ni掺杂ZnO的电子结构与光学性质 总被引:2,自引:0,他引:2
利用基于密度泛函理论的第一性原理方法计算了纯ZnO和分别掺摩尔分数均为6.25%Al,Ni的ZnO的能带结构、电子态密度分布及光学性质。计算结果表明:ZnO掺杂Al,Ni后,其Fermi面均上移并进入导带;Zn0.9375Ni0.0625O的能带结构在导带底附近出现了4条杂质带。纯ZnO,Zn0.9375Al0.0625O和Zn0.9375Ni0.0625O的光学性质在低能处有较大的差异,其中Zn0.9375Al0.0625O在可见光区的吸收系数和反射率较之另外两种材料都相对较低,但三者的光学性质在高能处却非常相似。Zn0.9375Al0.0625O的吸收边有蓝移的趋势,而Zn0.9375Ni0.0625O的吸收边红移。掺杂Ni对ZnO的吸收系数等光学性质的改变更为明显。 相似文献
10.