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The effect of active layer deposition temperature on the electrical performance of amorphous InGaZnO (a-IGZO) thin film transistors (TFTs) is investigated. With increasing annealing temperature, TFT performance is firstly improved and then degraded generally. Here TFTs with best performance defined as "optimized-annealed" are selected to study the effect of active layer deposition temperature. The field effect mobility reaches maximum at deposition temperature of 150℃ while the room-temperature fabricated device shows the best subthreshold swing and off-current. From Hall measurement results, the carrier concentration is much higher for intentional heated a-IGZO films, which may account for the high off-current in the corresponding TFT devices. XPS characterization results also reveal that deposition temperature affects the atomic ratio and Ols spectra apparently. Importantly, the variation of field effect mobility of a-IGZO TFTs with deposition temperature does not coincide with the tendencies in Hall mobility of a-IGZO thin films, Based on the further analysis of the experimental results on a-IGZO thin films and the corresponding TFT devices, the trap states at front channel interface rather than IGZO bulk layer properties may be mainly responsible for the variations of field effect mobility and subthreshold swing with IGZO deposition temperature. 相似文献
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非直流电压对N*-SmC*相序铁电液晶排列的影响 总被引:1,自引:1,他引:0
半"V"字形铁电液晶器件中使用N* -SmC*相序的铁电液晶材料,获得此种器件单畴排列的常用方法是在N*-SmC*相变过程中施加直流电压,但是这种方法引入了损害器件性能的剩余电荷.通过研究在相变过程中施加各种非直流电压对液晶排列织构的影响,发现直流电压不是得到N*-SmC*相序的铁电液晶均一排列的必要条件,通过选择双极性电压为V1=7V/μm,V2=3 V/μm,一个脉冲周期20 ms内施加双极性电场时间比为D1/D2=3/7,不仅获得了电光特性曲线不存在迟滞回线的均一层排列器件,同时也解决了剩余电荷对器件的影响. 相似文献
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采用柔性的双官能团聚合物单体二丙烯酸酯NPGDA,将掺杂这种单体含量为2%(质量分数)的铁电液晶在SmA*相下用UV光照,制备了聚合物网络稳定铁电液晶样品。原子力显微镜给出NPGDA在样品中形成了具有各向异性、沿着基板摩擦方向延伸的聚合物网络。利用偏光显微镜和液晶参数综合测试仪对该样品进行观察测试,实验检测结果表明,由于聚合物网络体锚定的引入,使得铁电液晶分子在电场下的运动受到限制,得到了均匀取向的条纹织构,避免了zigzag缺陷,且该器件的电光曲线为“V”字形,从而实现了连续灰度,对比度达到199∶1,饱和电压为6V,上升时间和下降时间分别为494μs和404μs,同时铁电液晶器件的抗震动能力得到了显著提高。 相似文献
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