An air-stable inverted photovoltaic device using ZnO as the electron selective layer and MoO3 as the blocking layer

An air-stable photovoltaic device based on znic oxide nanoparticles (ZNP) in an inverted structure of indium tin oxide (ITO)/ZnO/poly (3-hexylthiophene) (P3HT): [6,6]-phenyl C61-butyric acid methyl ester (PCBM)/MoO3/Ag is studied. We find that the optimum thickness of the MoO3 layer is 2 nm. When the MoO3 blocking layer is introduced, the fill factor of the devices is increased from 29% to 40%, the power conversion efficiency is directly promoted from 0.35% to 1.27%.The stability under ambient conditions of this inverted structure device much is better due to the improved stability at the polymer/Ag interface. The enhancement is attributed to the high carriers mobility and suitable band gap of MoO3 layer.     

C60场效应晶体管的制备及修饰层对器件性能影响的研究

以重掺杂Si片作为衬底,SiOe／聚甲基丙烯酸甲酯（PMMA）为双栅绝缘层,C60为有源层,制备了不同修饰层的有机场效应晶体管（OFETs）;研究了不同修饰层的器件对于场效应性能的影响。实验表明,与未加修饰层的器件相比,经过修饰的器件性能有一定的提高,其中Alqa／LiF双修饰层器件的场效应迁移率达到最大,为1．6×1...     

Plasmon-enhanced polymer bulk heterojunction solar cells with solution-processable Ag nanoparticles

We report the plasmon-enhanced polymer bulk-heterojunction solar cells with Ag nanoparticles (AgNPs) obtained via chemical method. Here, the AgNPs films with different particle densities are introduced between the poly (3,4-ethylene dioxythiophene) poly (styrenesulfonate) (PEDOT: PSS) buffer layer and the poly (3-hexythiophene):[6,6]-phenyl-c61 butyric acid methyl ester (P3HT: PCBM) layer. By improving the optical absorption of the active layer owing to the localized surface plasmons, the power conversion efficiency of the solar cells is increased compared with the control device. It is shown that the efficiency of the device increases with the density of AgNPs. For the device employing higher density, the resulted power conversion efficiency is found to increase from 2.89% to 3.38%, enhanced by 16.96%.     

有机场效应晶体管输出特性的衰变与恢复

制作了以并五苯作为有源层的有机场效应晶体管（OFETs）。实验观察表明,在原位条件下,器件有很好的输出特性曲线;但在空气中放置3个月后,输出特性曲线明显衰退,并且关态电流增大;为恢复器件性能,在真空条件下,对器件进行加热处理。实验结果表明,经过热处理的晶体管输出特性极大改善。因此,真空热处理可以使衰退器件的输出特性得到...