0.5um砷化镓pHMET工艺之低功耗2.5-5GHz低噪声放大器

本文利用0.5um砷化镓pHMET工艺设计并制造工作于2.5-5GHz的单片微波集成低噪声放大器。为了达到高的带宽,本文利用的宽带匹配及负反馈的技术。测试结果显示,在2.5-5GHz频率范围内,该放大器有最小2.4dB的噪声系数及17dB的增益,输入输出回波损耗均小于-10dB,并且功耗只有33mW。据作者所知,本文是0.5um pHEMT工艺下在相近的产品中具有最小的功耗。     

一种砷化镓HBT高速预分频器的设计

介绍了一种采用砷化镓HBT工艺实现的数字静态除8高速预分频器。该预分频器采用D触发器高速分频和多级供电驱动电路结构。测试结果表明,最高工作频率达到18GHz。预分频器芯片在5V的电源电压下的静态电流为85mA。     

从三维模型到自动编程加工仿真的实现

通过一个加工实例介绍了从三维模型到自动编程、加工仿真的实现.首先在Pro/E中对所要加工的零件进行参数化三维设计,然后将三维实体导入Mastercam,并进行各种加工设置,最后实现自动编程和加工仿真.     

A low power 2.5-5 GHz low-noise amplifier using 0.5-μm GaAs pHEMT technology

正A two-stage 2.5-5 GHz monolithic low-noise amplifier(LNA) has been fabricated using 0.5-μm enhanced mode AlGaAs/GaAs pHEMT technology.To achieve wide operation bandwidth and low noise figure,the proposed LNA uses a wideband matching network and a negative feedback technique.Measured results from 2.5 to 5 GHz demonstrate a minimum of 2.4-dB noise figure and 17-dB gain.The input and output return loss exceeded -10-dB across the band.The power consumption of this LNA is 33 mW.According to the author's knowledge,this is the lowest power consumption LNA fabricated in 0.5-μm AlGaAs/GaAs pHEMT with the comparable performance.