Optimization of frequency characteristics for SAW device using apodization weighting method

To calibrate the tracing performance of the thirty meter telescope(TMT)tertiary mirror,for the special requirement of the TMT,the laser tracker is used to verify the motion.Firstly,the deviation is divided into two parts,namely,the repeatable error and the unrepeatable part.Then,based on the laser tracker,the mearturement and evalutation methods of the rigid body motion for the mirror are established,and the Monte Carol method is used to determine the accuracy of the mothod.Lastly,the mothod is applied to the turn table of a classical telescope and the residual error is about 4 arc second.The work of this paper will guide the next desgin and construction work of the thirty meter telescope tertiary mirror.     

（FexCo1-x）73.5Cu1Nb3Si13.5B9合金高温磁性的研究

研究了460～640℃等温退火后纳米晶（FexCo1-x）73.5Cu1Nb3Si13.5B9（x=0.5，1）合金的初始磁导率麒随温度变化。与双相纳米晶Fe73.5Nb3Si13.5B9合金相比，（Fe0.5Co0.5）73.5Cu1Nb3Si13.5B9合金室温下的磁导率降低，但晶化相和非晶相居里温度明显升高，并显著提高了合金在高温下的软磁性能。初步探讨了改善纳米晶合金高温磁性的机理。     

Synthesis of monoclinic structure gallium oxide film on sapphire substrate by magnetron sputtering

Gallium oxide (Ga2O3) films were deposited on singlecrystalline sapphire (0001) substrate by radio frequency (RF) magnetron sputtering technique in the temperature range of 300—500 °C. The microstructure of the β-Ga2O3 films were investigated in detail using X-ray diffractometer (XRD) and scanning electron microscope (SEM). The results show that the film prepared at 500 °C exhibits the best crystallinity with a monoclinic structure (β-Ga2O3). Structure analysis reveals a clear out-of-plane orientation of β-Ga2O3 || Al2O3 (0001). The average transmittance of these films in the visible wavelength range exceeds 90%, and the optical band gap of the films varies from 4.68 eV to 4.94 eV which were measured by an ultraviolet-visible-near infrared (UV-vis-NIR) spectrophotometer. Therefore, it is hopeful that the β-Ga2O3 film can be used in the UV optoelectronic devices. #$TABThis work has been supported by the National Natural Science Foundation of China (Nos.61274113, 61404091, 61505144, 51502203 and 51502204), the Opening Fund of Key Laboratory of Silicon Device Technology in Chinese Academy of Sciences, and the Tianjin Natural Science Foundation (Nos.14JCZDJC31500 and 14JCQNJC00800).#$TABE-mail:miwei1986@yeah.net