A wideband CMOS VGLNA based on single-to-differential stage and resistive attenuator for TV tuners

A wideband CMOS variable gain low noise amplifier(VGLNA) based on a single-to-differential(S2D) stage and resistive attenuator is presented for TV tuner applications.Detailed analysis of input matching,noise figure(NF) and linearity for S2D is given.A highly linear passive resistive attenuator is proposed to provide 6 dB attenuation and input matching for each gain stage.The chip was fabricated by a 0.18μm 1P6M CMOS process, and the measurements show that the VGLNA covers a gain range over 36.4 dB and achieves a maximum gain of 21.3 dB,a minimum NF of 3.0 dB,an IIP3 of 0.9 dBm and an IIP2 of 26.3 dBm at high gain mode with a power consumption less than 10 mA from a 1.8 V supply.     

应用于无线传感网络的2.4GHz低噪声放大器

采用SMIC0.13μmRFCMOS工艺设计,并实现了应用于无线传感网络的2.4GHz差分低功耗低噪声放大器。在低功耗约束下,电路采用差分共源共栅源极退化电感结构。考虑了ESD保护PAD和封装等寄生电容,分析了输入阻抗匹配、增益、噪声和线性度,提出了低功耗条件下输入阻抗匹配和噪声优化措施。芯片测试结果显示,噪声系数NF为2.5dB,输出采用片外无源网络匹配下功率增益S21为9.4dB,输入三阶交调点IIP3为-1.5dBm。在1.2V电源电压下消耗电流3.3mA。芯片面积为860μm×680μm。     

应用于软件无线电的四阶可重构模拟基带滤波器

本文提出了一个应用于软件无线电的四阶可重构模拟基带滤波器。该滤波器采用有数字辅助的有源RC低通结构,可以灵活地改变滤波器的特性,比如截止频率,选择性,类型,噪声,增益和功耗。为了同时达到优化噪声和调节功耗的目的,这里采用了一种新的可配置运放结构。该芯片采用SMIC 0.13μm CMOS工艺制作。主体滤波器和频率校准电路的面积分别为1.8 × 0.8 mm2和0.48 × 0.25 mm2。测试结果表明,该滤波器可以提供巴特沃斯和切比雪夫两种响应,而且截止频率可以覆盖从280kHz 到15MHz的宽带范围,同时可调增益范围为0dB到18dB。在1.2V的电源电压下获得29dBm的IIP3。根据给定的协议,输入参考噪声密度在41 nV/Hz½ 到133 nV/Hz½之间变化,低频带和高频带模式分别消耗了5.46mW和8.74mW的功耗。     

A 900 MHz,21 dBm CMOS linear power amplifier with 35% PAE for RFID readers

A two-stage differential linear power amplifier(PA) fabricated by 0.18μm CMOS technology is presented. An output matching and harmonic termination network is exploited to enhance the output power,efficiency and harmonic performance.Measurements show that the designed PA reaches a saturated power of 21.1 dBm and the peak power added efficiency(PAE) is 35.4%,the power gain is 23.3 dB from a power supply of 1.8 V and the harmonics are well controlled.The total area with ESD protected PAD is 1.2×0.55 mm~2.Sy...     

一种基于单转差电路和电阻衰减网络的适用于电视调谐器的可变增益低噪声放大器

本文给出了一种基于单端转差分电路和电阻衰减网络的高动态范围可变增益低噪声放大器,该宽带低噪放可以应用于电视调谐器应用。本文给出了单端转差分电路详细的噪声和线性度分析和比较并提出了一种电阻衰减网络,该衰减网络提供每级6dB的恒定衰减和输入阻抗匹配。芯片在SMIC 0.18μm CMOS 1P6M的工艺下制造,测试结果表明,在1.8V电源电压下,该低噪放最大增益为21.3dB,最小噪声系数为3.0dB,IIP3和IIP2分别为0.9dBm和26.3dBm,增益范围达36.4dB,总体功耗小于18mW。     

A 1.0 V differential VCO in 0.13 μm CMOS technology

A differential complementary LC voltage controlled oscillator(VCO) with high Q on-chip inductor is presented.The parallel resonator of the VCO consists of inversion-mode MOS(I-MOS) capacitors and an on-chip inductor.The resonator Q factor is mainly limited by the on-chip inductor.It is optimized by designing a single turn inductor that has a simulated Q factor of about 35 at 6 GHz.The proposed VCO is implemented in the SMIC 0.13μm 1P8M MMRF CMOS process,and the chip area is 1.0×0.8 mm~2.The free-running frequency is from 5.73 to 6.35 GHz.When oscillating at 6.35 GHz,the current consumption is 2.55 mA from a supply voltage of 1.0 V and the measured phase noise at 1 MHz offset is -120.14 dBc/Hz.The figure of merit of the proposed VCO is -192.13 dBc/Hz.     

一个具有前置低噪放的宽动态范围线性RF功率检测器

摘要：本文给出了一个针对发射机载波泄露抑制的宽动态范围线性射频功率检测器的设计。该检测器基于对数放大器原理,并运用逐级检测的方法在射频频段实现宽动态范围。为提高灵敏度,检测器前端放置了一个低噪声放大器。而出于减小寄生和面积的目的,检测器采用直流耦合的架构,但这将导致电路中的直流失调对其动态范围形成危害。因此,本文提出一个直流失调消除技术用于消除检测器的直流失调。最终,检测器采用SMIC 0.13μm CMOS 工艺流片,测试结果表明其在900MHz/2GHz,分别实现了50dB/40dB的宽动态范围且检测误差在?1dB之内,功耗为16mA?1.5V。面积为0.27?0.67mm2。     

A baseband LPF for GSM,TD-SCDMA and WCDMA multi-mode transmitters

This paper describes a low-pass reconfigurable baseband filter for GSM,TD-SCDMA and WCDMA multi-mode transmitters.To comply with 3GPP emission mask and limit TX leakage at the RX band,the out-of -band noise performance is optimized.Due to the distortion caused by the subthreshold leakage current of the switches used in capacitor array,a capacitor bypass technique is proposed to improve the filter’s linearity.An automatic frequency tuning circuit is adopted to compensate the cut-off frequency variation.Simulation results show that the filter achieves an in-band input-referred third-order intercept point(IIP3) of 47 dBm at 1.2-V power supply and the out-of-band noise can meet TX SAW-less requirement for WCDMA & TD-SCDMA.The baseband filter incorporates -40 to 0 dB programmable gain control that is accurately variable in 0.5 dB steps.The filter’s cut-off frequency can be reconfigured for GSM/TD-SCDMAAVCDMA multi-mode transmitter.The implemented baseband filter draws 3.6 mA from a 1.2-V supply in a 0.13μm CMOS process.     

一种饱和功率为21dBm，峰值效率为35%的应用于900MHz RFID阅读器的CMOS线性功率放大器

本文在CMOS 0.18μm Mixed Signal工艺上实现了工作于900MHz的两级差分线性功率放大器,该功放工作于class AB状态。本文探讨了低压下输出匹配和谐波抑制网络,以提高功放的输出功率及效率,降低输出谐波。测试结果表明,在1.8V的电源电压下,功放在900MHz频率的输出饱和功率达到21.1dBm,输出1dB压缩点的功率为18.4dBm,峰值功率增加效率为35.4%,功率增益为23.3dB,各谐波分量也得到很好的控制。两级功放加上PAD的芯片总面积为1.2×0.55mm2。通过单芯片测试以及基于原型机的测试结果表明,该功放可以满足UHF RFID阅读器的应用。