Barrier height temperature coefficient in ideal Ti/n-GaAs Schottky contacts

We have measured the I-V characteristics of Ti/n-GaAs Schottky barrier diodes (SBDs) in the temperature range of 60-320 K by the steps of 20 K. The SBDs have been prepared by magnetron DC sputtering. The ideality factor n of the device has remained almost unchanged between 1.02 and 1.04 from 120 to 320 K, and 1.10 at 100 K. Therefore, it has been said that the experimental I-V data are almost independent of the sample temperature and quite well obey the thermionic emission (TE) model at temperatures above 100 K. Furthermore, the barrier height (BH) Φ_b0 slightly increased with a decrease in temperature, 320-120 K. The Φ_b0 versus temperature plot from intercepts of the forward-bias ln I versus V curves has given a BH temperature coefficient of α = −0.090 meV/K. The Norde’s function has been easily carried out to determine the temperature-dependent series resistance values because the TE current dominates in the I-V characteristics. Therefore, the Φ_b0 versus temperature plot from the Norde’s function has also given a BH temperature coefficient value of α = −0.089 meV/K. Thus, the negligible temperature dependence or BH temperature coefficient close to zero has been attributed to interface defects responsible for the pinning of the Fermi level because their ionization entropy is only weakly dependent on the temperature.     

Results of the treatment of acute endophthalmitis after cataract surgery

Since 1980, the authors have observed 56 cases of endophthalmitis after cataract surgery which they classify into three groups: A. 18 cases of forms confined to the anterior segment, which just received medical treatment; B. 37 cases of more serious forms with vitreous abscess, treated by vitrectomy; C. 1 case of fulminant form which was eviscerated. The results of group B are better than those of group A: organic: 2.7% versus 11.1% of phtisis; functional: 73% of calculable visual acuity versus 66.6%, although the initial forms had been more severe. Vitrectomy, however causes some complications such as initial detachment (16.2%) cysto?d macular oedema (11%) and vascular complications (11%). However that may be, vitrectomy has several advantages: to collect a larger amount of vitreous liquid; to mechanically eliminate the pus; a faster functional rehabilitation by lightening of the vitreous.     

Temperature-dependent <Emphasis Type="Italic">C-V</Emphasis> characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique

Since the importance of Schottkky devices, Au/ZnO/n-Si device were obtained, and the capacitance–voltage (C-V) and conductance-voltage (G-V) characteristics of Au/ZnO/n-Si device were studied using admittance spectroscopy at changing temperature from 160 to 340 K with 20 K intervals and ?1 to +2 V bias voltage range. The interface thin film ZnO layer was deposited on the n-type Si wafer by atomic layer deposition technique (ALD) in order to obtain homogenous interface layer. The layer thickness of ZnO was taken as 10 nm by the resulting ZnO film growth rate at about 1.45 Å per cycle. This thin film layer was characterized with XRD and AFM analyses. It can be seen from the C-V curves of the device that the capacitance values increased in depletion region with increasing temperature and exhibited peaks towards to forward biases after 240 K temperature. The changing of capacitance values confirmed re-ordering and re-structuring of charges in the interface of the device with changing temperature. The G-V curves of the device also increased with increasing temperature and towards to forward bias voltages due to increasing free charges in the interface. The series resistance (\({R}_{s}\)) of the device was taken into account to understand its effect on main electrical parameters, and it could be seen from these results that the \({R}_{s}\) strongly depends on the device temperature. The impedance (Z) values decreased with changing from ?1 to +2 V bias voltages and increasing temperature. The barrier height which was obtained from the C ^?2 -V plots increased a slope of 0.00108 eV/K with a decrease in temperature from 160 to 340 K. It can be concluded that the Au/ZnO/n-Si device may be used and improved for next technological applications such as capacitor and memristor.     

The Characteristic Parameters of Ni/<Emphasis Type="Italic">n</Emphasis>-6H-SiC Devices Over a Wide Measurement Temperature Range

Ni/n-type 6H-SiC/Ni Schottky barrier diodes (SBDs) have been prepared by the DC magnetron sputtering deposition technique. Their current-voltage characteristics (I-V) have been measured in the measurement temperature range of 40-400 K with steps of 20 K under dark conditions. The barrier height (BH) values from the temperature-dependent forward and reverse bias I-V characteristics by different methods coincide with each other which indicates the elimination of the polarity between the Si and C ions. The ideality factor value remains almost unchanged in the 160-400 K range, and below 160 K, it has the values of 1.57 at 140 K, and 3.82 at 60 K. The BH has the values of 0.79 eV at 400 K, and 0.71 eV at 300 K. The decrease in the BH is due to the fact that the current will preferentially flow through the lowest BH with decreasing temperature due to barrier inhomogeneity. The value of 0.71 eV at 300 K is in close agreement with the values of 0.65 and 0.83 eV reported from the forward bias I-V characteristics for the Ni /n-type 6H-SiC in the literature. Thus, it has been concluded that the reduced barrier devices are promising for applications in devices operating at cryogenic temperatures as infrared detectors, sensors in thermal imaging and small signal zero-bias rectifiers and microwave mixers.     

Origin of forward bias capacitance peak and intersection behavior of C and G/w of Ag/p-InP Schottky barrier diodes

Frequency-dependent electrical characteristics of Ag/p-InP diodes have been determined using impedance spectroscopy at room temperature. Series resistance (R_s) and interface state(s) (N_ss) values were extracted from capacitance (C) and conductance (G/w) data using the Nicollian and Goetzberger and Hill–Coleman methods, respectively. C and G/w data were also corrected in the whole measured bias voltage range to obtain real diode capacitance C_c and conductance G_c values in order to see the effects of R_s. Both the C–V and R_s–V plots showed anomalous peak in depletion region especially at low frequencies due to the existence of N_ss. C–V and G/w–V plots crossed at a certain bias voltage and this point shifted toward negative bias voltages with increasing frequency and then disappeared at 3 MHz. Also, decrease in C values corresponds to an increase in G/w values in the same bias voltages.     

Reverse bias capacitance-voltage characteristics of Au/n-GaAs Schottky diodes under hydrostatic pressure

In Au/n-GaAs Schottky diodes, a remarkable decrease in the depletion layer capacitance was observed by application of hydrostatic pressure. The capacitance decrease induced by the hydrostatic pressure is attributed to the change of ionized additional donor-like defect centres. Since the capacitance decrease is due to hydrostatic pressure, we suggest an application as a pressure-sensitive capacitor.     

Schottky barrier height modification in Au/n-type 6H-SiC structures by PbS interfacial layer

We have prepared the Au/PbS/n-6H-SiC Schottky diodes with interface layer and the reference Au/n-6H-SiC/Ni Schottky diodes without interface layer to realize Schottky barrier height (SBH) modification in the Au/SiC Schottky diodes. The BH reduction has been succeeded by the PbS interlayer to modify the effective BH by influencing the space charge region of the SiC. The PbS thin layer on the SiC was formed by the vacuum evaporation. The SBH values of 0.97 and 0.89 eV for the samples with and without the interfacial PbS layer were obtained from the forward bias current-voltage (I-V) characteristics. X-ray diffraction (XRD) study was carried out to determine the structural formation of the PbS on SiC. The reduction of the BH in the Au/PbS/n-6H-SiC Schottky diodes has been attributed to the fact that the interface states have a net positive interface charge in metal/n-type semiconductor contact, and thus the positive space charge Q_sc in the Au/PbS/n-6H-SiC Schottky diodes becomes smaller than if the interface state charges Q_ss were absent. The experimental carrier concentration value of 4.73 × 10¹⁷ cm⁻³ obtained from the forward and reverse bias capacitance-voltage characteristics for the Au/PbS/n-6H-SiC contacts is lower than the value of 5.52 × 10¹⁷ cm⁻³ obtained for the reference diode, and this is an evidence of the reduction of the BH by the modification of the space charge density of the SiC.