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Aigo T. Goto M. Ohta Y. Jono A. Tachikawa A. Moritani A. 《Electron Devices, IEEE Transactions on》1996,43(4):527-534
We report on DC and microwave characteristics for high electron-mobility transistors (HEMT's) grown on Si substrates by metal-organic chemical vapor deposition (MOCVD). Threshold voltage (V th) distribution in a 3-in wafer shows standard deviation of Vth (σVth) of 36 mV with Vth of -2.41 V for depletion mode HEMT's/Si and σVth of 31 mV with Vth of 0.01 V for enhancement mode, respectively. The evaluation of Vth in a 1.95×1.9 mm2 area shows high uniformity for as-grown HEMT's/Si with σVth of 9 mV for Vth of -0.10 V, which is comparable to that for HEMT's/GaAs. Comparing the Vth distribution pattern in the area with that for annealed HEMT's/Si, it is indicated that the high uniformity of Vth is obtained irrelevant of a number of the dislocations existing in the GaAs/Si. From microwave characteristic evaluation for HEMT's with a middle-(10~50 Ω·cm) and a high-(2000~6000 Ω·cm) resistivity Si substrate using a new equivalent circuit model, it is demonstrated that HEMT's/Si have the disadvantage for parasitic capacitances and resistances originated not from the substrate resistivity but from a conductive layer at the Si-GaAs interface. The parasitic parameters, especially the capacitances, can be overcome by the reduction of electrode areas for bonding pads and by the insertion of a dielectric layer under the electrode, which bring high cut-off frequency (fT) and maximum frequency of operation (fmax) of 24 GHz for a gate length of 0.8 (μm). These results indicate that HEMT's/Si are sufficiently applicable for IC's and discrete devices and have a potential to be substituted for HEMT's/GaAs 相似文献
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Noboru Ohtani Masakazu Katsuno Hiroshi Tsuge Tatsuo Fujimoto Masashi Nakabayashi Hirokatsu Yashiro Mitsuru Sawamura Takashi Aigo Taizo Hoshino 《Microelectronic Engineering》2006,83(1):142-145
Dislocation processes during physical vapor transport (PVT) growth of silicon carbide (SiC) single crystals were investigated by defect selective etching. It was found that foreign polytype inclusions introduced a high density of dislocations at the polytype boundary. In the polytype-transformed areas of the crystal, very few medium size hexagonal etch pits due to threading screw dislocations were observed, indicating that the polytype transformation ceased the propagation of threading screw dislocations. The oval-shaped etch pit arrays observed on the etched vicinal (0 0 0 1)Si surface, indicative of the dislocation multiplication in the basal plane, showed characteristic distribution around micropipes. Based on the results, we have argued the dislocation behavior in PVT grown SiC crystals, suggesting that dislocation interaction and conversion are relevant processes to understanding the behavior. 相似文献
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Noboru Ohtani Shoji Ushio Tadaaki Kaneko Takashi Aigo Masakazu Katsuno Tatsuo Fujimoto Wataru Ohashi 《Journal of Electronic Materials》2012,41(8):2193-2196
The morphological and electrical properties of surface growth pits caused by dislocations in 4H-SiC epitaxial layers were characterized using tunneling atomic force microscopy. The characteristic distribution of the tip current between the metal-coated atomic force microscopy tip and the SiC was observed within a large surface growth pit caused by a threading screw dislocation. The current was highly localized inside the pit and occurred only on the inclined surface in the up-step direction near the pit bottom. This paper discusses the causes and possible mechanisms of the observed tip current distribution inside surface growth pits. 相似文献
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Victor Cussac Leandro Becker Juana Aigo Cecilia Conte‐Grand Guillermo Blasetti Pedro Cordero Sonia Crichigno Diego Nabaes 《Lakes & Reservoirs: Research and Management》2014,19(2):74-85
The introduction of salmonids in Patagonia has resulted in significant impacts on its lakes, as well as a major impact on streams, in which native fishes seem to have been displaced almost completely by rainbow trout (Oncorhynchus mykiss). Another perspective is that the introduced salmonid species have resulted in wild fish populations that sustain an economically important sport fishery. The wide distribution and high abundance of escaped farmed rainbow trout, and a clear decrease in the abundance of native and successfully introduced salmonid species in Alicura Reservoir were all observed, based on comparison of recent data and data from 1993 to 1995 corresponding to littoral gillnet captures. Thus, both native fish and introduced salmonid populations seem to have been drastically reduced in the presence of farmed fish escapees. The results of the present study regarding fish escapes deserve major consideration when making decisions about fish cage culture activities for other Patagonian reservoirs. 相似文献
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A new small-signal linear equivalent circuit for high electron mobility transistors (HEMTs) fabricated on GaAs-on-Si wafers, HEMTs-on-Si, has been proposed. The new equivalent circuit describes the microwave characteristics of HEMTs-on-Si much better than the conventional metal-semiconductor field-effect transistor (MESFET) equivalent circuit does. Influences of the pads, the GaAs-Si interface, and the Si substrate on the microwave characteristics are included in the circuit. It also has a great advantage in that it can separately analyze the intrinsic device characteristics and influences of Si substrate and GaAs-Si interface. Analyzes using the new equivalent circuit show that the crucial problem of HEMTs-on-Si is the larger values of the pad capacitances and the drain-source capacitances than those of HEMTs fabricated on GaAs bulk wafers, HEMTs-on-GaAs, and that the substrate resistivity is not an important factor for microwave performances of HEMTs-on-Si. The microwave performance was improved by the reduction of the pad capacitances 相似文献
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Hanyu I. Asai S. Nunokawa M. Joshin K. Hirachi Y. Ohmura S. Aoki Y. Aigo T. 《Electronics letters》1988,24(21):1327-1328
A T-shaped quarter-micron gate structure composed of WSix /Ti/Pt/Au has been developed for low-noise AlGaAs/GaAs HEMTs. The gate resistance R g was reduced to 0.3 Ω for devices with 200 μm-wide gates despite using WSix, and the source resistance R s reached 0.28 Ω mm by minimising the source-gate distance using a self-alignment technique. This HEMT exhibited the lowest reported noise figure of 0.54 dB with an associated gain of 12.1 dB at 12 GHz 相似文献
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