Hydrodynamics and liquid phase axial mixing in orifice pipe reactor

Two phase flow in a horizontal pipe, with orifice plates placed at regular intervals as obstructions, was studied for the effect of phase velocities on flow patterns, fractional phase hold-ups, pressure drop and liquid phase axial dispersion. Radioactive technetium-99m (as an aqueous solution of sodium pertechnatate) was used as tracer. A pulse injection technique with two point measurements was employed. Three different orifice diameters were used (8 mm, 16 mm, and 20 mm) in a pipe diameter of 32 mm. The orifice spacing was 500 mm in all cases. Superficial gas (air) velocity was varied over a range from 0.02 m/s to 1.0 m/s and superficial liquid (water) velocity from 0.03 m/s to 0.85 m/s. Different flow patterns under different flow conditions were identified and a generalised flow map is presented. Variations in hold-ups and pressure drop with flow patterns have been explained. Rational correlations have been developed for fractional phase hold-ups and pressure drop. A preliminary comparison of two phase gas-liquid flow in a horizontal pipe with orifice obstructions (to be called orifice pipe reactor), as a gas-liquid contacting device, is made with a conventional bubble column reactor. Recommendations have been made for future work.     

Ultralow-k silicon containing fluorocarbon films prepared by plasma-enhanced chemical vapor deposition

Low dielectric constant materials as interlayer dielectrics (ILDs) offer a way to reduce the RC time delay in high-performance ultra-large-scale integration (ULSI) circuits. Fluorocarbon films containing silicon have been developed for interlayer applications below 50-nm linewidth technology. The preparation of the films was carried out by plasma-enhanced chemical vapor deposition (PECVD) using gas precursors of tetrafluorocarbon as the source of active species and disilane (5 vol.% in helium) as a reducing agent to control the ratio of F/C in the films. The basic properties of the low dielectric constant (low-k) interlayer dielectric films are studied as a function of the fabrication process parameters. The electrical, mechanical, chemical, and thermal properties were evaluated including dielectric constant, surface planarity, hardness, residual stress, chemical bond structure, and shrinkage upon heat treatments. The deposition process conditions were optimized for film thermal stability while maintaining a relative dielectric value as low as 2.0. The average breakdown field strength was 4.74 MV/cm. The optical energy gap was in the range 2.2–2.4 eV. The hardness and residual stress in the optimized processed SiCF films were, respectively, measured to be in the range 1.4–1.78 GPa and in the range 11.6–23.2 MPa of compressive stress.     

Low temperature plasma enhanced chemical vapor deposition of silicon oxide films using disilane and nitrous oxide

Silicon oxide films have been deposited between room temperature and 300°C using disilane and nitrous oxide by plasma enhanced chemical vapor deposition. Film deposition was investigated as a function of the gas flow ratio of nitrous oxide to disilane, the substrate temperature, the total gas flow rate, the radio frequency discharge power, and the process pressure. The stoichiometric SiO₂ films were obtained when the gas ratio of nitrous oxide to disilane was in the range of 50-150. The deposition was found to be nearly temperature independent indicating the mass transport limited regime.     

Microstructural Analysis of Multi-phase Ultra-Thin Oxide Overgrowth on Al–Mg Alloy by High Resolution Transmission Electron Microscopy

High-resolution transmission electron microscopy analyses are carried out to understand the microstructure of the ultra-thin oxide-film grown on a (native) amorphous Al₂O₃-coated Al-0.8 at.% Mg alloy substrate at T = 600 K for t = 2 h and at pO₂ of 1 × 10^?2 Pa. This oxide-film is found to be non-uniformly thick with thicknesses varying from 1.50 to 4.60 nm. Occasionally, this oxide is found to diffuse into the Al–Mg alloy substrate, forming oxide thicknesses up to 10.5 nm. Overall, this oxide-film is found to consist of a mixed amorphous, (poly) crystalline and an intermediate amorphous-to-crystalline transition regions, with crystalline regions consisting mostly of MgO and the diffused oxide regions into the Al–Mg alloy substrate coated with γ-Al₂O₃. These observations are then compared with the experimental results obtained using angle-resolved X-ray Photoelectron Spectroscopy analysis and thermodynamic predictions for the growth of an ultra-thin oxide-film due to dry, thermal oxidation of Al–Mg alloy substrates.     

Low temperature oxidation of silicon

Oxidation of silicon in dry oxygen ambient at temperatures between 25°C to 500°C, with a point-to-plane corona discharge is studied. The oxidation rate for this case is a strong function of temperature and is found to increase significantly in comparison to the conventional thermal oxidation rate. For the thicker films, refractive index of the grown oxide layer approaches the value obtained for high-temperature thermally grown oxide     

Low temperature carbon nanotube and hexagonal diamond deposition with photo-enhanced chemical vapor deposition

Deposition of carbon nanotube and hexagonal diamond thin films at low substrate temperature with photo-enhanced chemical vapor deposition is described here. Extensive experimentation is conducted to optimize the catalyst layer utilized for deposition by varying Al/Ni/Al metal layer thicknesses on SiO₂ coated Si substrates. The coated substrates are annealed to transform the thin metal layers into nanoparticles. Suitable catalyst layer thicknesses obtained are 3/2/3, 5/1/5 and 5/3/5 nm for Al/Ni/Al sandwich metal layers. Suitable annealing conditions are in the range of 350–450 °C for substrate temperature and from 0.22 to 10 Torr for chamber pressure in ammonia ambient for 25 min. Carbon tetrachloride (CCl₄) is used as a carbon precursor in this work. Argon to CCl₄ flow ratio is varied in 1.5–19 range, chamber pressure is varied in 3–10 Torr range, and the substrate temperature is varied in 350–450 °C range. Carbon nanotubes (CNT) growth is observed at lower chamber pressure, lower partial pressure of CCl₄, lower substrate temperature and for thin Ni catalyst layer. The optimal CNT deposition condition observed is 5 Torr total chamber pressure, 9:1 partial pressure ratio of Ar to CCl₄, 400 °C substrate temperature and 5/1/5 nm thick Al/Ni/Al catalyst layers. The hexagonal diamond deposition is observed at a higher chamber pressure, higher partial pressure of CCl₄, higher substrate temperature and for a thicker Ni catalyst layer. The optimal condition for hexagonal diamond deposition observed is 10 Torr total chamber pressure, 7:3 partial pressure ratio of Ar to CCl₄, 450 °C substrate temperature and 5/3/5 nm thick Al/Ni/Al catalyst sandwich layers.     

Text-independent speaker identification using Radon and discrete cosine transforms based features from speech spectrogram

This paper presents a new feature extraction technique for speaker recognition using Radon transform (RT) and discrete cosine transform (DCT). The spectrogram is compact, efficient in representation and carries information about acoustic features in the form of pattern. In the proposed method, speaker specific features have been extracted by applying image processing techniques to the pattern available in the spectrogram. Radon transform has been used to derive the effective acoustic features from the speech spectrogram. Radon transform adds up the pixel values in the given image along a straight line in a particular direction and at a specific displacement. The proposed technique computes Radon projections for seven orientations and captures the acoustic characteristics of the spectrogram. DCT applied on Radon projections yields low dimensional feature vector. The technique is computationally efficient, text-independent, robust to session variations and insensitive to additive noise. The performance of the proposed algorithm has been evaluated using the Texas Instruments and Massachusetts Institute of Technology (TIMIT) and our own created Shri Guru Gobind Singhji (SGGS) databases. The recognition rate of the proposed algorithm on TIMIT database (consisting of 630 speakers) is 96.69% and for SGGS database (consisting of 151 speakers) is 98.41%. These results highlight the superiority of the proposed method over some of the existing algorithms.     

Scattering and admittance matrices of SAW transducers

Thep-plane scattering and admittance matrices of SAW transducers consisting ofn equal sections modeled through the hybrid equivalent circuit are explicitly calculated. The results are specialized to the in-line and crossed-field models, and the technique is developed for unequal section transducers.     

Upgrading Information Security and Protection for Palm-Print Templates

Biometric systems proven to be one of the most reliable and robust method for human identification. Integration of biometrics among the standard of living provokes the necessity to vogue secure authentication systems. The use of palm-prints for user access and authentication has increased in the last decade. To give the essential security and protection benefits, conventional neural networks (CNNs) has been bestowed during this work. The combined CNN and feature transform structure is employed for mapping palm-prints to random base-n codes. Further, secure hash algorithm (SHA-3) is used to generate secure palm-print templates. The proficiency of the proposed approach has been tested on PolyU, CASIA and IIT-Delhi palm-print datasets. The best recognition performance in terms of Equal Error Rate (EER) of 0.62% and Genuine Acceptance Rate (GAR) of 99.05% was achieved on PolyU database.