Equalizing the transmission gain of the energy analyzer-secondary-electron multiplier system

An electric circuit for applying the voltage, determined by the voltage across electrodes of the energy analyzer, to the control grid, placed at the input of the detector of the secondary-electron multiplier, has been designed. With the transmission gains of the analyzer and saw-tooth voltage divider that powers the energy analyzer being equal, the constancy of particle energy at the detector input is maintained and the transmission gain of the section is thereby kept unchanged in the whole energy range of analyzed particles.     

More Efficient Copy Grinding of Complex Surfaces

Russian Engineering Research - The relation between the machining quality and the input parameters is considered in copy grinding of complex surfaces. A method is proposed for improving the quality...     

Structural peculiarities of amorphous semiconductors As33.3Se33.3S33.4 and As33.3Se33.3Te33.4 doped with samarium

The structure of chalcogenide vitreous semiconductors (CVSs) As_33.3Se_33.3S_33.4 and As_33.3Se_33.3Te_33.4 and the influence on them of samarium additives is studied using the technique of X-ray diffraction. The observed peculiarities of the diffraction picture are explained by the Elliott void-cluster model. The structural parameters of CVS materials As_33.3Se_33.3S_33.4 and As_33.3Se_33.3Te_33.4 with and without admixtures of samarium are determined.     

The Effect of Synthesis and Heat Treatment Modes on the Local Structure of a Ge2Sb2Te5 Chalcogenide Semiconductor

Semiconductors - Features of amorphous state?crystal phase transitions have been studied by X-ray diffractometry and Raman spectroscopy in their dependence on methods for obtaining...     

Raman scattering in As-Se-S and As-Se-Te Chalcogenide vitreous semiconductors

Chalcogenide vitreous semiconductors of As-Se-S and As-Se-Te compositions are synthesized, with thin films produced by thermal evaporation in vacuum. X-ray phase analysis and Raman spectroscopy are used to confirm their amorphous state and examine their structural specific features. It is shown that the matrices of both materials have a network-chain structure with covalent bonds between As, Se, S, and Te atoms. Structural units of the type of AsSe₃ and AsS₃ pyramids, AsSe_3/2 bipyramids, and α(β)-As₄S₄ molecules exist in the As-Se-S matrix, and AsSe₃, AsSe_3/2, As₂Se₃, and As₂Te₃ units, in As-Se-Te. The vibrational modes of Se-Se, Te-Te, As-As, As-S, Se-As-Se, As-Se-As, Se-As-S, Se-As-Te, and Se-Te bonds constituting both separate molecules and amorphous matrices are determined.     

Structure and Optical Properties of Chalcogenide Glassy As–Ge–Te Semiconductor

Semiconductors - The structure and optical properties of a chalcogenide glassy As–Ge–Te semiconductor film are studied by X-ray diffraction analysis, Raman spectroscopy, and optical...     

Structure and Optical Properties of Chalcogenide Glassy Semiconductors of the As–Ge–Se System

Semiconductors - The types of structural elements and chemical bonds forming an amorphous matrix of chalcogenide glassy semiconductors of the As–Ge–Se system and changes occurring in...     

Role of samarium atoms in the formation of the structure of As-Se-S chalcogenide vitreous semiconductors

The Raman spectra of films of samarium-doped As-Se-S three-component chalcogenide vitreous semiconductors are studied. It is shown that the spectra are constituted by four bands in the frequency ranges 10–100, 195–290, 290–404, and 420–507 cm^?1, which strongly vary with doping. The structural units in As-Se-S and their possible changes upon doping are determined. The results obtained are accounted for by the specific distribution of samarium atoms in the sample and by their chemical activity.