60 GHz Single-Chip Front-End MMICs and Systems for Multi-Gb/s Wireless Communication

Single-chip 60 GHz transmitter (TX) and receiver (RX) MMICs have been designed and characterized in a 0.15mum (f_T~ 120 GHz/f _MAX> 200 GHz) GaAs mHEMT MMIC process. This paper describes the second generation of single-chip TX and RX MMICs together with work on packaging (e.g., flip-chip) and system measurements. Compared to the first generation of the designs in a commercial pHEMT technology, the MMICs presented in this paper show the same high level of integration but occupy smaller chip area and have higher gain and output power at only half the DC power consumption. The system operates with a LO signal in the range of 7-8 GHz. This LO signal is multiplied in an integrated multiply-by-eight (X8) LO multiplier chain, resulting in an IF center frequency of 2.5 GHz. Packaging and interconnects are discussed and as an alternative to wire bonding, flip-chip assembly tests are presented and discussed. System measurements are also described where bit error rate (BER) and eye diagrams are measured when the presented TX and RX MMICs transmits and receives a modulated signal. A data rate of 1.5 Gb/s with simple ASK modulation was achieved, restricted by the measurement setup rather than the TX and RX MMICs. These tests indicate that the presented MMICs are especially well suited for transmission and reception of wireless signals at data rates of several Gb/s     

Electrical mode-hopping noise in external-cavity semiconductor lasers and mode-hopping elimination by a nonoptical control loop

The longitudinal mode-hopping and the associated terminal electrical noise in AlGaAs buried heterostructure lasers in an external-cavity configuration are investigated. It is found that the electrical mode-hopping noise has a1/f-dependence when two external-cavity modes are involved in the mode-hopping. Furthermore, it is found that the optical feedback can suppress the electrical noise significantly below the noise level of the free-running laser. This corresponds to a reduction of the emission line width which is in agreement with the reduction of the electrical noise level. A novel, nonoptical, scheme for active elimination of mode-hopping attributable to thermal drift or mechanical disturbances in CW-operated external-cavity lasers is also proposed and demonstrated. Using this method, where the electrical noise is used as an error signal in a control loop, long-term single external-cavity mode operation and low electrical noise and optical intensity noise levels were maintained.     

Picosecond semiconductor laser radar with optical amplifier

An optical range finder, which uses the same semiconductor laser as both an optical pulse source and an optical preamplifier of the reflected pulse, is reported. This method has the advantage of reducing the number of optical components that must be aligned, which makes it suitable as a picosecond laser radar in aerospace applications. The device showed a maximum optical gain of 17 dB with a dynamic range of 33 dB, and the obtained resolution was of the order of 1 mm.     

外源RNA促进小鼠肠腺辐射损伤恢复的研究

ＢＡＬＢ／ ｃ小鼠１０４０ｃＧｙ＾６０Ｃｏγ射线腹部照射后，采用不同一源的ＲＮＡ、不同的注入剂量、途径、时间和次数等因素，研究外源ＲＮＡ对空肠肠腺存活率的影响。结果表明（１）不同来源的ＲＮＡ均可明显提高受照小鼠的腺存活率。（２）酵母ＲＮＡ的洲入剂量与肠腺存尖率之间呈一钟形曲线，局部肠腔注入的最适剂量为４０－６０μｇ／小鼠，腹腔和肌肉注入时为８０μｇ／小鼠。     

In situ characterization of laser diodes from wide-band electrical noise measurements

The wide-band electrical noise characteristics of 0.8-, 1.3-, and 1.5-μm laser diodes have been studied theoretically and for the first time also experimentally. The electrical noise is related to the optical intensity noise behavior, and can therefore be used for in situ measurements and characterization of laser diodes. Since the measurements are performed without any optical components, undesired optical feedback is eliminated. The results show that several important laser parameters and characteristics can be extracted from purely electrical noise measurements. Among these are the relaxation frequency, the threshold current, the emission linewidth, optical feedback properties, and longitudinal mode hopping behavior. Good agreement between the noise theory and the electrical noise measurements has been obtained. An expression for obtaining both the spectral linewidth and lineshape from electrical noise measurements is also derived.     

Photodetection properties of semiconductor laser diode detectors

Several commercial GaAlAs and InGaAsP injection lasers have been investigated with respect to their photodetection properties. The responsivity of the laser diode detectors is in the 0.15-0.25 A/W range and the dark current ranges from 5 nA to 500 nA at 3-V reverse bias. The high frequency performance of a laser diode detector strongly depends on the laser structure. The bandwidth is determined by the capacitance of the lasers and ranges from 70 MHz to 1.3 GHz. The structure showing the fastest response was the TJS laser due to its low junction capacitance.     

Penalty-free GSM-1800 and WCDMA radio-over-fibre transmission using multimode fibre and 850 nm VCSEL

Penalty-free GSM-1800 and WCDMA radio-over-fibre transmission over 600 m of multimode fibre using low-cost gigabit Ethernet components operating at 850 nm is presented.     

100-Mbit/s semiduplex optical fiber transmission experiment using GaAs/GaAlAs laser transceivers

Semiduplex, high-data-rate transmission over a single optical fiber using GaAs/GaAlAs channeled substrate planar (CSP) structure lasers both as light source and photodetector has been demonstrated. The responsivity in the receiving mode at the operating wavelength (830 nm) was 0.15 A/W. This device is suitable for semiduplex transmission, since the emissive spot and the photosensitive area of the laser coincide. The impulse response was measured to be 2.5 ns full width at half maximum (FWHM) at zero bias voltage. A 500-m single-mode fiber was used, and by using microlenses the input coupling loss was reduced to less than 4.5 dB. Measurements at a data rate of 100 Mbit/s return to zero (RZ) shows an optical power margin of 14 dB for a bit error rate (BER) of 10^-9. Using lasers instead of LED's as transceivers would improve the transmission capability and the system margin of a semiduplex communication link.     

核酸前体对小鼠肠腺辐射损伤的恢复作用

小鼠经９８０ｃＧｙ γ射线腹部照射后，用局部肠腔扩张注入法，将被测试剂注入空肠肠腔内。于照射后第４ｄ活杀小鼠，测定注入肠段和对照肠段的肠腺存活率。结果表明：单独一种嘌呤类或嘧啶类核苷酸，核苷和碱基，同小牛胸腺ＤＮＡ一样，具有提高照射后肠腺存活率的作用，这一事实提示，外源核酸对辐射损伤细胞或机体的恢复效应，并非由于其高聚状态，而是其酶解产物作用所致。     

锌电积过程中杂质行为及其相互反应

研究了锌电积过程中杂质行为及其相互反应对电流效率的影响。在较高酸度下，电积过程中可接受的杂质浓度显著降低。在电解液含Ｚｎ４５ｇ／Ｌ，酸１２０ｇ／Ｌ时，对锌人发生明显影响的杂质含量范围为；砷，锑≥０．３－０．４ｍｇ／Ｌ锗≥０．０４ｍｇ／Ｌ，钴≥３－５ｍｇ／Ｌ。提供了上述几种杂质对锌沉积物状况影响的照片。