Single-mode laser diode at 778-nm wavelength: effect of p-doping

An AlGaAs-GaAs double quantum well structure has been grown by metal-organic chemical vapor deposition. High p-doping of the cladding layer (4×10¹⁸ cm^-3) is used to optimize the performance of ridge waveguide laser diodes. A stable single-mode operation is obtained with output power of 120 mW at room temperature. The temperature constant T₀ is ~230 K. Improvements are explained by reduction of electron leakage and by the current self-distribution effect     

GaInAsP/GaInP/AlGaInP MOCVD-grown diode lasers emitting at 808 nm

The MOCVD epitaxy has been used to grow the GaInAsP/GaInP/AlGaInP laser heterostructures with a narrow symmetric waveguide and broad asymmetric waveguide. Mesa stripe 100 μm aperture diode lasers emitting at 808 nm were manufactured. It is shown that a SiO₂/Si dielectric mirror coating of Fabry-Perot faces of Al-free semiconductor lasers does not result in catastrophic optical mirror damage. It is found that the maximum optical output power of Al-free diode lasers is limited by catastrophic optical damage of the laser heterostructure. Maximum values of optical output power of 5.1 and 9.9 W have been attained in diode lasers with a narrow symmetric waveguide and broad asymmetric waveguide, respectively.