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Anteney I.M. Lippert G. Ashburn P. Osten H.J. Heinemann B. Parker G.J. Knoll D. 《Electron Device Letters, IEEE》1999,20(3):116-118
An electrical method is applied to SiGe and SiGe:C heterojunction bipolar transistors (HBTs) to extract the bandgap narrowing in the base layer and to characterize the presence of parasitic energy barriers in the conduction band, arising from boron transient enhanced out-diffusion from the SiGe layer. It is shown that a background carbon concentration within the base (≈1020 cm-3) eliminates parasitic energy barriers at the collector/base junction, and hence shows that transient enhanced diffusion of boron from the base has been completely suppressed 相似文献
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