Digital circuit capacitance and switching analysis for ground bounce in ICs with a high-ohmic substrate

Substrate noise is a major obstacle for mixed-signal integration. Ground bounce is a major contributor to substrate noise generation due to the resonance caused by the inductance and the Vdd-Vss admittance that consists of the on-chip digital circuit capacitance of the MOS transistors, the decoupling, and the parasitics arising from the interconnect. In this paper, we address: 1) the dependence of the Vdd-Vss admittance on the different states of the circuit, the supply voltage, and the interconnect, and 2) the computation of the total supply current with ground bounce. By using a fast and accurate macromodeling approach, the Vdd-Vss admittances of several test circuits are computed with 2%-3% error relative to the values simulated from the complete SPICE level netlist, but several orders of magnitude faster in CPU time and with 10% maximum error relative to the measurements on a test ASIC fabricated in a 0.18-/spl mu/m CMOS process on a high-ohmic substrate with 18 /spl Omega//spl middot/cm resistivity. The measurements also show that this admittance mainly depends only on the connectivity of the gates to the supply rail rather than their connectivity among each other.     

Ultra-wide-band transmitter for low-power wireless body area networks: design and evaluation

The successful realization of a wireless body area network (WBAN) requires innovative solutions to meet the energy consumption budget of the autonomous sensor nodes. The radio interface is a major challenge, since its power consumption must be reduced below 100 /spl mu/W (energy scavenging limit). The emerging ultra-wide-band (UWB) technology shows strong advantages in reaching this target. First, most of the complexity of an UWB system is in the receiver, which is a perfect scenario in the WBAN context. Second, the very little hardware complexity of a UWB transmitter offers the potential for low-cost and highly integrated solutions. Finally, in a pulse-based UWB scheme, the transmitter can be duty-cycled at the pulse rate, thereby reducing the baseline power consumption. We present a low-power UWB transmitter that can be fully integrated in standard CMOS technology. Measured performances of a fully integrated pulse generator are provided, showing the potential of UWB for low power and low cost implementations. Finally, using a WBAN channel model, we present a comparison between our UWB solution and state-of-the-art low-power narrow-band implementations. This paper shows that UWB performs better in the short range due to a reduced baseline power consumption.     

Substrate noise generation in complex digital systems: efficient modeling and simulation methodology and experimental verification

More and more system-on-chip designs require the integration of analog circuits on large digital chips and will therefore suffer from substrate noise coupling. To investigate the impact of substrate noise on analog circuits, information is needed about digital substrate noise generation. In this paper, a recently proposed simulation methodology to estimate the time-domain waveform of the substrate noise is applied to an 86-Kgate CMOS ASIC on a low-ohmic epi-type substrate. These simulation results have been compared with substrate noise measurements on this ASIC and the difference between the simulated and measured substrate noise rms voltage is less than 10%. The simulated time domain waveform and frequency spectrum of the substrate noise correspond well with the measurements, indicating the validity of this simulation methodology. Both measurements and simulations have been used to analyze the substrate noise generation in more detail. It has been found that direct noise coupling from the on-chip power supply to the substrate dominates the substrate noise generation and that more than 80% of the substrate noise is generated by simultaneous switching of the core cells. By varying the parameters of the simulation model, it has been concluded that a flip-chip packaging technique can reduce the substrate noise rms voltage by two orders of magnitude when compared to traditional wirebonding.     

Modeling and experimental verification of substrate noise generation in a 220-Kgates WLAN system-on-chip with multiple supplies

Substrate noise is a major obstacle for mixed-signal integration. While the power consumption scales linearly with the clock frequency, substrate noise does not have this scaling due to the resonances in the transfer function of the supply current to the substrate. This paper addresses a practical technique to estimate the substrate noise frequency spectrum of a large mixed-mode System-on-Chip (SoC) with multiple supplies and embedded memories. The results have been verified with substrate noise measurements on a 60-MHz 220-Kgates telecom SoC implemented in a 0.35 /spl mu/m CMOS process on an EPI-type substrate. We compute a linear chip-level substrate model together with the single-cycle representation of piecewise-linear noise sources of three supply regions used in this ASIC. Based on this model we accurately estimate the four major resonances in the substrate noise spectrum and their relative magnitudes with 2 dB relative error at the major resonance with respect to measurements. We also present substrate noise measurements at different operating modes of the WLAN receiver. These measurements show that output I/O buffers generate significant substrate noise where an increase of 44% is measured for substrate noise peak-to-peak value due to the additional simultaneous switching of six output I/O buffers with already fully switching datapath and two output I/Os.     

A CMOS Ultra-Wideband Receiver for Low Data-Rate Communication

A low-power impulse-radio ultra-wideband receiver is demonstrated for low data-rate applications. A topology selection study demonstrates that the quadrature analog correlation is a good receiver architecture choice when energy consumption must be minimized. The receiver operates in the 3.1-5 GHz band of the UWB FCC spectrum mask on channels of 500 MHz bandwidth. The pulse correlation operation is done in the analog domain in order to reduce the ADC sampling speed down to the pulse repetition rate, thereby reducing the power consumption. The receiver comprises a low-noise amplifier with full on-chip matching network, an RF local oscillator generation, two quadrature mixers, two analog baseband chains followed by two ADCs, and a clock generation network. The receiver is implemented in 0.18 mum CMOS technology and achieves 16 mA power consumption at 20 Mpulses/s pulse repetition rate.     

Evolution of substrate noise generation mechanisms with CMOS technology scaling

Substrate noise is a major obstacle for single-chip integration of mixed-signal systems. To reduce this problem and to assess its evolution with CMOS technology scaling, the different mechanisms that generate substrate noise and their dependencies on different parameters need to be well understood. In this paper, we show that with downscaling of the technology, substrate noise due to supply coupling becomes the dominant coupling mechanism when the chip substrate is directly biased with the digital ground. With Kelvin ground substrate biasing on the other hand, source/drain capacitive coupling becomes the dominant coupling mechanism. Further, we show that with downscaling, the peak value of the supply coupling noise component becomes more dependent on the relative ratio of the switching capacitance to the nonswitching capacitance, which is formed by the circuit decoupling and the nonswitching circuit elements, rather than the Ldi/dt noise. These insights illustrated in a quantitative framework are believed to be very useful for the systematic use of digital low-noise design techniques in future CMOS technologies.     

Methodology and experimental verification for substrate noise reduction in CMOS mixed-signal ICs with synchronous digital circuits

This paper describes substrate noise reduction techniques for synchronous CMOS circuits. Low-noise digital design techniques have been implemented and measured on a mixed-signal chip, fabricated in a 0.35 /spl mu/m CMOS process on an EPI-type substrate with 10 /spl Omega/cm EPI resistivity and 4 /spl mu/m EPI layer thickness. The test chip contains one reference design and two digital low-noise designs with the same basic architecture. Measurements show more than a factor of 2 on average in r.m.s. noise reduction with penalties of 3% in area and 4% in power for the low-noise design employing a supply-current waveform-shaping technique based on a clock tree with latencies. The second low-noise design employing separate substrate bias for both n- and p-wells, dual-supply, and on-chip decoupling achieves more than a factor of 2 reduction in r.m.s. noise, with, however, a 70% increase in area, but with a 5% decrease in power consumption.     

SWAN: high-level simulation methodology for digital substrate noise generation

Substrate noise generated by the switching digital circuits degrades the performance of analog circuits embedded on the same substrate. It is therefore important to know the amount of noise at a certain point on the substrate. Existing transistor-level simulation approaches based on a substrate model extracted from layout information are not feasible for digital circuits of practical size. This paper presents a complete high-level methodology, which simulates a large digital standard cell-based design using a network of substrate macromodels, with one macromodel for each standard cell. Such macromodels can be constructed for both EPI-type and bulk-type substrates. Comparison of our substrate waveform analysis (SWAN) to several measurements and to several full SPICE simulations indicates that the substrate noise is simulated with our methodology within 10%-20% error in the time domain and within 2 dB relative error at the major resonance in the frequency domain. However, it is several orders of magnitude faster in CPU time than a full SPICE simulation.