Experimental study of surface channel in insulated-gate field-effect transistor

A simple experimental technique is described for measuring the effective channel length and the surface-channel drift mobility in the insulated-gate field-effect transistor. Experimental results are presented for p channel transistors made in 8 ? cm silicon.     

Stabilising influence of boron in silicon-gate technology

By performing a series of experiments on polysilicon-oxide-silicon (S.O.S.) capacitors, it is shown that, in p channel silicon-gate technology, a gettering action occurs during the drive-in cycle. Although the exact mechanism of this action is not known, it is tentatively suggested that, during the drive-in cycle, boron enters the gate oxide and renders the mobile ions inactive.