Cytotoxic T Cell Expression of Leukocyte-Associated Immunoglobulin-Like Receptor-1 (LAIR-1) in Viral Hepatitis C-Mediated Hepatocellular Carcinoma

Virus-related hepatocellular carcinoma (HCC) pathogenesis involves liver inflammation, therefore, despite successful treatment, hepatitis C virus (HCV) may progress to HCC from initiated liver cirrhosis. Cytotoxic T cells (Tcs) are known to be involved in HCV-related cirrhotic complications and HCC pathogenesis. The inhibitory checkpoint leukocyte-associated immunoglobulin-like receptor-1 (LAIR-1) is expressed on Tcs. Therefore, we aimed to determine whether the Tc expression level of LAIR-1 is associated with HCC progression and to evaluate LAIR-1 expression as a noninvasive biomarker for HCC progression in the context of liver cirrhosis related to HCV genotype 4 (G4) in Egyptian patients’ peripheral venous blood liquid biopsy. A total of 64 patients with HCC and 37 patients with liver cirrhosis were enrolled in this case-controlled study, and their LAIR-1 expression on Tc related to the progression of liver cirrhosis was examined and compared to that of the apparently healthy control group (n = 20). LAIR-1 expression was analyzed using flow cytometry. Results: The HCC group had significantly higher LAIR-1 expression on Tc and percentage of Tc positive for LAIR-1 (LAIR-1+Tc%) than the HCV G4-related liver cirrhosis group. LAIR-1+Tc% was correlated with the HCC surrogate tumor marker AFP (r = 0.367, p = 0.001) and insulin resistance and inflammation prognostic ratios/indices. A receiver operating characteristic (ROC) curve revealed that adding LAIR-1+Tc% to AFP can distinguish HCC transformation in the Egyptian patients’ cohort. Upregulated LAIR-1 expression on Tc could be a potential screening noninvasive molecular marker for chronic inflammatory HCV G4 related liver cirrhosis. Moreover, LAIR-1 expression on Tc may be one of the players involved in the progression of liver cirrhosis to HCC.     

An investigation of three novel nonionic surfactants as corrosion inhibitor for carbon steel in 0.5 M H2SO4

The inhibition effect of three novel nonionic surfactants, 2-((alkylimino)methyl)phenyl bis(53-hydroxy-3,6,9,12,15,18,21,24,27,30,33,36,39,42,45,48,51-heptadecaoxatripentacontyl) phosphate (I–III), on the corrosion of carbon steel in 0.5 M H₂SO₄ was studied by polarization, EIS and weight loss measurements. It was found that all the inhibitors were effective inhibitors and their inhibition efficiency was significantly increased with increasing both concentration and temperature. Polarization curves revealed that the used inhibitors represent mixed-type inhibitors. Adsorption of used inhibitors led to a reduction in the double layer capacitance and an increase in the charge transfer resistance. Adsorption of used compounds was found to obey Langmuir isotherm and showed a chemical mechanism.     

Ultraviolet-visible metal-semiconductor-metal photodetectors fabricated from InxGa1−xN (0≤x≤0.13)

Metal-semiconductor-metal (MSM) photodetectors have been fabricated on In_xGa_1−xN epitaxial films grown by metalorganic chemical vapor deposition within the composition range 0≤x≤0.13. The dark current and spectral response were measured for devices with a varying In mole fraction x. The devices, which had nominal finger widths and finger spacing of 5 μm, were biased with modest voltages in the range 2≤V_bias≤5 V. In general, turn-on wave-length and dark current increased with increasing x. Turn-on wavelengths ranged from λ=370 nm to 430 nm and dark current densities ranged from I_dark=2×10⁻² A/cm² (V_bias=5 V, x≈0.05) to 9×10⁴ A/cm² (V_bias=2 V, x≈0.13) depending on the In content, x, of the device active area.     

Stability of web plates in W-shape columns accounting for flange/web interaction

North American, British and European codes of practice provide design equations for local buckling limit state of W-shape columns, by assuming the web and the flanges are either simply supported or clamped along their lines of junctions. In doing so, the geometric interactions between the web and flange are ignored. In practice, the column webs rarely have simply supported or clamped edges but are rather elastically restrained against rotation. In addition, the in-plane boundary conditions of the web, which is dictated by geometric properties of the flanges, have a great influence on its buckling and post-buckling stiffness. The paper highlights the influence of the flange/web geometric proportions on the stability of web plates in W-shape columns under uniform compression. Results are obtained showing the influence of the flange/web thickness (t_f/t_w) on the buckling and post buckling stiffness of the web. Also, the influence of the flange/web width (b_f/b_w) on the web stability is highlighted. Graphs are presented showing the transitions between various “theoretical” boundary conditions by adjusting the flange/web geometric proportions. These graphs are useful to use in practice in order to achieve economical design of column section.     

Recessive Robinow syndrome: with emphasis on endocrine functions

We present the characteristic features of 14 children with the recessive form of Robinow syndrome and the growth hormone (GH) response to provocation with clonidine and the serum insulin-like growth factor-I (IGF-I) concentration in 12 of these children. The gonadotropin (luteinizing hormone [LH] and follicle-stimulating hormone [FSH]) response to gonadotropin-releasing hormone (GnRH) was evaluated in early pubertal and pubertal patients, and the testosterone response to human chorionic gonadotropin (HCG) was evaluated in males. Children with Robinow syndrome, born at full-term, were short at birth (length, 41.4+/-2.1 cm) and had markedly slow growth velocity (GV) during the first year (13.1+/-2.1 cm/yr); consequently, they were significantly short at the end of the first year of life (length, 54.4+/-2.9 cm). This intrauterine and early extrauterine growth delay reflected low growth potential. During childhood, the GV standard deviation score (GVSDS) remained low (-2.17+/-0.83). Despite the presence of empty sella in all of the patients, they had an adequate GH response to clonidine provocation (peak, 19.3+/-5.8 microg/L) and a normal serum IGF-I concentration (309+/-142 ng/mL) for their age. During childhood and early adolescence, boys with Robinow syndrome had low basal testosterone and a low testosterone response to HCG stimulation (3,000 IU/m2/d intramuscularly [IM] for 3 days). However, their basal and GnRH-stimulated FSH concentrations were normal. Two girls (Tanner II breast development) had a normal serum estradiol (E2) concentration but high LH and FSH responses to GnRH stimulation. This suggested either defective feedback of E2 on the hypothalamic-pituitary axis or hyporesponsiveness of the ovaries to gonadotropin. Four weeks of HCG therapy (2,500 IU/m2 IM twice weekly) in three boys with Robinow syndrome increased the penile length and testicular volume, denoting a significant Leydig cell response to prolonged HCG stimulation and the presence of functioning androgen receptors. It is suggested that HCG and/or testosterone therapy during infancy may improve the severe micropenis in these patients.     

Wind Pressures on Parapets of Flat Roofs

A wind-tunnel study has been carried out to assess wind pressures acting on parapets, including their top surfaces. Local and area-averaged pressure coefficients were measured on parapets of flat-roof models with a length to height ratio (L/H) of 1:1, 2:1, and 3:1. The results were obtained for full-scale equivalent parapet heights of 1 and 2 m and for wind directions ranging from zero to 315°. The local wind load on the parapet was found to be approximately 30% larger at the windward corner of the building than at the midspan location. Maximum parapet loads for the low building model were approximately 30% larger than those for the cubical model. Parapet height did not significantly affect the peak local load on the parapet except in the corner region, where the inward load (toward the roof) for the 1 m parapet was 25% higher than that for the 2 m parapet.     

Low temperature growth of AIGaP and GaP on si substrates by atomic layer epitaxy

AIGaP and GaP films were deposited on the (100) Si substrates by atomic layer epitaxy (ALE) in the temperature range between 450 and 600°C. Under optimum growth conditions, the growth of GaP and AIGaP was observed to proceed in a two-dimensional (2-D) fashion in the initial growth stages. These ALE-grown films have better surface morphology when compared with the corresponding MOCVD-grown films. With an AIGaP buffer layer grown on Si, the subsequent growth of GaAs on the AlGaP-coated Si substrates tends to proceed as 2-D growth. This avoids island growth and the two-step growth process currently used.     

Fast and accurate analytic formulas for calculating the parametersof a general broadside-coupled coplanar waveguide for (M)MICapplications

Fast and accurate analytic formulas for calculating the quasistatic transverse electromagnetic (TEM) parameters of a general broadside-coupled coplanar waveguide (GBSC CPW) are presented. Simplicity, high speed of computation, and accuracy suggest the use of these formulas for (M)MIC CAD (monolithic) microwave integrated circuit computer-aided design programs. Numerical calculations are presented to investigate various electrical properties of the structure. An asymmetrical BSC CPW and the single CPW resulting from connecting the two coupled strips of the GBSC CPW at the input and the output ports are analyzed. Criteria are obtained to ensure the coplanar behavior of the structure     

Electrical properties of manganese doped Ga1−xInxAs grown by liquid phase epitaxy

Mn-doped Ga_1?xIn_xAs crystals (0 < x < 0.25) have been grown by the LPE technique, and the doping characteristics and electrical properties of the layers have been studied by Hall measurement. The distribution coefficient of Mn has been found to depend on the substrate orientation. The acceptor enerby level is about 77 meV and is comparable to that of Mn-doped GaAs. p-n junction diodes with high InAs compositions, grown using the step grading technique, showed a diode factor of 2. Electron diffusion lengths greater than 3μm have been measured in these Mn doped layers.