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1.
Mastrapasqua M. Luryi S. Belenky G.L. Garbinski P.A. Cho A.Y. Sivco D.L. 《Electron Devices, IEEE Transactions on》1993,40(8):1371-1377
A monolithic multiterminal logic device that functions both optically and electrically as an ORNAND gate, is demonstrated for the first time. The device, based on the real-space transfer of hot electrons into a complementary collector layer, has been implemented in an InGaAs/InAlAs/InGaAs heterostructure grown by molecular beam epitaxy. Excellent performance is obtained at room temperature. The collector current and the optical output power both exhibit the OR and the NAND functions of any two of the three input terminals, these functions being interchangeable by the voltage on the third terminal 相似文献
2.
Belenky A. Fish A. Spivak A. Yadid-Pecht O. 《Circuits and Systems II: Express Briefs, IEEE Transactions on》2007,54(12):1032-1036
A novel concept for global shutter CMOS image sensors with wide dynamic range (WDR) implementation is presented. The proposed imager is based on the multisampling WDR approach and it allows an efficient global shutter pixel implementation achieving small pixel size and high fill factor. The proposed imager provides wide DR by applying adaptive exposure time to each pixel, according to the local illumination intensity level. Two pixel configurations, employing different kinds of a 1-bit in-pixel memory were implemented. An imager, including two different pixels was designed and simulated in 0.18-mum CMOS technology. System architecture and operation are discussed and simulation results are presented. 相似文献
3.
Belenky G. Reynolds C.L. Jr. Shterengas L. Hybertsen M.S. Donetsky D.V. Shtengel G.E. Luryi S. 《Photonics Technology Letters, IEEE》2000,12(8):969-971
The temperature dependence of differential gain dG/dn for 1.3-μm InGaAsP-InP FP and DFB lasers with two profiles of p-doping was obtained from RIN measurements within the temperature range of 25°C-65°C. Experiments showed that the change of the active region doping level from 3·1017 cm-3 to 3·1018 cm-3 leads to a 50% increase of the differential gain for FP lasers at 25°C. Heavily doped devices also exhibit more rapid reduction of the differential gain with increasing temperature. The effect of active region doping on the energy separation between the electron Fermi level and electronic states coupled into the laser mode explains the observations. The temperature dependence of differential gain for DFB devices strongly depends on the detuning of the lasing wavelength from the gain peak 相似文献
4.
L. E. Vorobjev M. Ya. Vinnichenko D. A. Firsov V. L. Zerova V. Yu. Panevin A. N. Sofronov P. Thumrongsilapa V. M. Ustinov A. E. Zhukov A. P. Vasiljev L. Shterengas G. Kipshidze T. Hosoda G. Belenky 《Semiconductors》2010,44(11):1402-1405
Carrier heating in GaAs/AlGaAs quantum wells (QWs) under optical interband pumping in the spontaneous-emission mode has been studied. The electron temperature was determined as a function of the pumping intensity. The effect of the electric field on the photoluminescence spectrum was examined. The change in the carrier concentration with the drive current in the spontaneous- and stimulated-emission modes in InGaAsSb/InAlGaAsSb QWs was determined from electroluminescence spectra. The rise in the temperature of hot carriers, which results in the increase in the carrier concentration with the drive current, was roughly estimated. 相似文献
5.
IP traceback with deterministic packet marking 总被引:5,自引:0,他引:5
We propose a new approach for IP traceback which is scalable and simple to implement, and introduces no bandwidth and practically no processing overhead. It is backward compatible with equipment which does not implement it. The approach is capable of tracing back attacks, which are composed of just a few packets. In addition, a service provider can implement this scheme without revealing its internal network topology. 相似文献
6.
G.L. Belenky D.V. Donetsky C.L. Reynolds Jr. R.F. Kazarinov G.E. Shtengel S. Luryi J. Lopata 《Photonics Technology Letters, IEEE》1997,9(12):1558-1560
Temperature dependencies of the threshold current, device slope efficiency, and heterobarrier electron leakage current from the active region of InGaAsP-InP multiquantum-well (MQW) lasers with different profiles of acceptor doping were measured. We demonstrate that the temperature sensitivity of the device characteristics depends on the profile of p-doping, and that the variance in the temperature behavior of the threshold current and slope efficiency for lasers with different doping profiles cannot be explained by the change of the measured value of the leakage current with doping only. The entire experimental data can be qualitatively explained by suggesting that doping ran affect the value of electrostatic band profile deformation that affects temperature sensitivity of the output device characteristics. We show that doping of the p-cladding/SCH layer interface in InGaAsP-InP MQW lasers leads to improvement of the device temperature performance. 相似文献
7.
8.
Blackburne-Stover Georgia; Belenky Mary F.; Gilligan Carol 《Canadian Metallurgical Quarterly》1982,18(6):862
Investigated the relationship between cognitive development, as measured by changes in the Moral Development Scale, and long-term reconstructive memory in 24 15–33 yr old females. The hypothesis that the past is reconstructed to conform with current developmental stages was examined. Results indicate that when developmental gains were made over a 1-yr interval, Ss used a higher stage perspective to reconstruct the decision making involved in resolving a problematic pregnancy and, hence, reconstructed the events in different terms than were originally presented. When developmental gains were not made over a 1-yr interval, Ss reconstructed the events in the same terms as originally presented. Further analysis indicated that those Ss who made developmental gains also referred to a phenomenon of "memory loss." Results support the hypothesis that memory is reconstructive rather than reproductive. (17 ref) (PsycINFO Database Record (c) 2010 APA, all rights reserved) 相似文献
9.
Ding Wang Dmitri Donetsky Seungyong Jung Gregory Belenky 《Journal of Electronic Materials》2012,41(11):3027-3030
Minority carrier lifetime in long-wave infrared (LWIR) type?II InAs/GaSb superlattices was studied using the optical modulation response (OMR) technique in wide ranges of excitation and temperature. The measured carrier lifetime was found to increase superexponentially with decreasing excitation power density below the level of 1?mW/cm2 to 2?mW/cm2. The phenomenon was qualitatively explained by the presence of shallow trapping centers. 相似文献
10.
Shterengas L. Belenky G.L. Jeng-Ya Yeh Mawst L.J. Tansu N. 《IEEE journal of selected topics in quantum electronics》2005,11(5):1063-1068
The effect of the quantum-well nitride content on the differential gain and linewidth enhancement factor of dilute-nitride GaAs-based near 1.3-/spl mu/m lasers was studied. Gain-guided and ridge waveguide lasers with 0%, 0.5%, and 0.8% nitrogen content InGaAsN quantum wells were characterized. Experiment shows that the linewidth enhancement factor is independent on the nitride content, and is in the range 1.7-2.5 for /spl lambda/=1.22--1.34 /spl mu/m dilute-nitride GaAs-based lasers. Differential gain and index with respect to either current or carrier concentration are reduced in dilute-nitride devices. 相似文献