New full-voltage-swing BiCMOS buffers

Circuit techniques are presented for increasing the voltage swing of BiCMOS buffers through active charging and discharging using complementary bipolar drivers. These BiCMOS circuits offer near rail-to-rail output voltage swing, higher noise margins, and higher speed of operation at scaled-down power supply voltages. The circuits are simulated and compared to BiCMOS and CMOS buffers. The comparison shows that the conventional BiCMOS and the complementary BiCMOS buffers are efficient for power supply voltages greater than 3V and that if the power supply voltage is scaled down (<3 V) and the load capacitance is large (>1 pF), the complementary BiCMOS buffers would be the most suitable choice. They provide high speed and low delay to load sensitivity and high noise margins. The first implementation is favorable near a 2.5-V power supply for its smaller area     

Circuit techniques for CMOS low-power high-performance multipliers

In this paper we present circuit techniques for CMOS low-power high-performance multiplier design. Novel full adder circuits were simulated and fabricated using 0.8-μm CMOS (in BiCMOS) technology. The complementary pass-transistor logic-transmission gate (CPL-TG) full adder implementation provided an energy savings of 50% compared to the conventional CMOS full adder. CPL implementation of the Booth encoder provided 30% power savings at 15% speed improvement compared to the static CMOS implementation. Although the circuits were optimized for (16×16)-b multiplier using the Booth algorithm, a (6×6)-b implementation was used as a test vehicle in order to reduce simulation time. For the (6×6)-b case, implementation based on CPL-TG resulted in 18% power savings and 30% speed improvement over conventional CMOS     

Low-power direct digital frequency synthesis for wirelesscommunications

A low-power direct digital frequency synthesizer (DDFS) architecture is presented. It uses a smaller lookup table for sine and cosine functions compared to already existing systems with a minimum additional hardware. Only 16 points are stored in the internal memory implemented in ROM (read-only memory). The full computation of the generated sine and cosine is based on the linear interpolation between the sample points. A DDFS with 60-dBc spectral purity 29-Hz frequency resolution, and 9-bit output data for sine function generation is being implemented in 0.8-μm CMOS technology. Experimental results verify that the average power dissipation of the DDFS logic is 9.5 mW (at 30 MHz, 3.3 V)     

Bootstrapped full-swing BiCMOS/BiNMOS logic circuits for 1.2-3.3 Vsupply voltage regime

Novel full-swing BiCMOS/BiNMOS logic circuits using bootstrapping in the pull-up section for low supply voltage down to 1 V are reported. These circuit configurations use noncomplementary BiCMOS technology. Simulations have shown that they outperform other BiCMOS circuits at low supply voltage using 0.35 μm BiCMOS process. The delay and power dissipation of several NAND configurations have been compared. The new circuits offer delay reduction between 40 and 66% over CMOS in the range 1.2-3.3 V supply voltage. The minimum fanout at which the new circuits outperform CMOS gate is 5, which is lower than that of other gates particularly for sub-2.5 V operation     

3.3-V BiCMOS current-mode logic circuits for high-speed adders

New high-speed BiCMOS current mode logic (BCML) circuits for fast carry propagation and generation are described. These circuits are suitable for reduced supply voltage of 3.3-V. A 32-b BiCMOS carry select adder (CSA) is designed using 0.5-μm BiCMOS technology. The BCML circuits are used for the correct carry path for high-speed operation while the rest of the adder is implemented in CMOS to achieve high density and low power dissipation. Simulation results show that the BiCMOS CSA outperforms emitter coupled logic (ECL) and CMOS adders     

A bootstrapped bipolar CMOS (B2CMOS) Gate forlow-voltage applications

This paper reports on a BiCMOS logic gate which combines bootstrapping and transient saturation techniques to achieve full swing operation down to 1.1 V supply voltage. The proposed B²CMOS uses a conventional (noncomplementary) BiCMOS process. HSPICE simulations have been used to compare the B²CMOS to CMOS, BiNMOS, and BS-BiCMOS for sub-0.5 μm BiCiMOS technologies. Simulation results have shown that the B²CMOS gate outperforms CMOS, BiNMOS, and BS-BiCMOS gates at 3 V and below. The crossover capacitance/fanout of the B²CMOS gate is 100 fF (i.e., fanout of 4) at 1.5 V. The delay-to-load sensitivity of the B²CMOS is 220 ps/pF (8 ps/fanout) which is one order of magnitude smaller than that of CMOS at 1.5 V     

Novel merged BiCMOS circuit structures

Novel merged BiCMOS circuit structures are presented. They offer an area saving of 20-30% compared with conventional BiCMOS structures. The DC and the transient performance of the merged structures are verified using the two-dimensional PISCES-IIB device simulator.<>     

Scaling of digital BiCMOS circuits

A generalized first-order scaling theory for BiCMOS digital circuit structures is presented. The effect of horizontal, vertical, and voltage scaling on the speed performance of various BiCMOS circuits is presented. The generalized scaling theory is used for the MOSFET, and the constant collector current (CIC) scaling scheme is used for the bipolar junction transistor (BJT). In scaling the bipolar transistor, polysilicon emitter contact and bandgap narrowing are taken into account. A case study for scaling BiCMOS circuits operating at 5- and 3.3-V power supplies shows that scaling improved BiCMOS buffers more significantly than CMOS buffers. Moreover, the low delay-to-load sensitivity of BiCMOS is preserved with scaling     

Numerical Investigation of the Fluid Flow in Continuous Casting Tundish Using Analysis of RTD Curves

 A detailed mathematical procedure of the optimization of the fluid flow in a tundish water model with and without flow control devices (weir and dam) was carried out using the commercial CFD code FLUENT 60. The (k ε) two equation model was used to model turbulence. The residence time distribution (RTD) curves were used to analyze the behavior of the flow in tundish. The location of flow control devices in the tundish was studied. The results show that the flow modifiers play an important role in promoting the floatation of nonmetallic inclusions in steel. Comparing the three geometric configurations that are considered (bare tundish, weir, weir+dam), the tundish equipped with the arrangement (weir+dam) is a best and optimal geometric configuration of tundish.     

A quad-band GSM-GPRS transmitter with digital auto-calibration

A low-power low-voltage fully integrated fast-locking quad-band (850/900/1800/1900-MHz) GSM-GPRS transmitter is described. It exploits closed-loop phase-locked loop (PLL) upconversion using a modulated fractional-N frequency synthesizer with digital auto-calibration. It uses a type-I PLL in a mostly digital IC with no external components and achieves a lock time of 43 /spl mu/s, a tuning range of 500 MHz, receive-band phase noise of -158dBc/Hz and -165 dBc/Hz for the high and low bands, respectively, and reference feed through of -93.9 dBc. It is implemented in 2.1 mm/sup 2/ using a 0.13-/spl mu/m CMOS process and meets all quad-band GSM transmitter specifications with a current consumption of only 28 mA from a single 1.5-V power supply.