Tunable TiO2 (anatase and rutile) materials manufactured by mechanical means

Anatase and rutile are two naturally found titanium dioxide phases with attractive dielectric, catalytic, and photo-catalytic characteristics. Anatase and rutile are photo-catalytically active in the UV region, since their band gaps are 3.2 eV and 3.75 eV, respectively. In this work is proposed a cost-effective, easy to launch methodology for modification of the TiO₂ bandgap. Such modifications will make the oxides photo-catalytically active in a wider optical range from the visible wavelengths to an extended UV spectrum. The proposed methodology is based on mechanical means such as mixing and milling. Various ratios of anatase:rutile were investigated and milled from 0 (mixing only) to 50 h using high energy mills. The results on mixing and milling show that it is possible to modify the bandgap of the TiO₂ from 2.53 eV to 4.04 eV. The characterization was conducted by means of X-ray diffraction, Raman spectroscopy, Scanning electron microscopy, and optical spectroscopy.     

Captopril ameliorates the decreased Na+,K(+)-ATPase activity in the retina of streptozotocin-induced diabetic rats

PURPOSE: To examine the effect of captopril, an angiotensin-converting enzyme (ACE) inhibitor, on the activity of retinal sodium-potassium ATPase (Na,K-ATPase) and the activity of ACE in the serum and retina of streptozotocin (STZ)-induced diabetic rats. METHODS: Experimental diabetes was induced in male Long-Evans rats by a single intraperitoneal injection of STZ (55 mg/kg body weight). Some groups of normal and diabetic animals were treated with captopril (10 mg/kg per day) added to the drinking water for either a week or a month. After 2 and 4 months of diabetes, the specific activity of retinal total Na,K-ATPase was determined. The components of the activity of Na,K-ATPase caused by the alpha 1 and alpha 3 isoforms were pharmacologically separated by their different sensitivity to ouabain. The activity of ACE in the serum and retina was measured by radioassay using benzoyl-gly-gly-gly as substrate (10(5) cpm, 5 mM). RESULTS: The total Na,K-ATPase activity was decreased significantly after 2 (16%, P < 0.02) and 4 months (15%, P < 0.02) of diabetes. At both time points examined, the activities of the alpha 1-low-ouabain-affinity isoform and the alpha 3-high-ouabain-affinity isoform of retinal Na,K-ATPase were significantly reduced compared to those of age-matched controls (alpha 1, 9% to 14%, P < 0.05; alpha 3, 14% to 19%, P < 0.05 and P < 0.02 respectively). After 1 month of captopril administration, the activities of both Na,K-ATPase isoforms were at control level in 2-month diabetic rats, whereas they were restored only partially in 4-month diabetic rats. In age-matched normal animals, 1 month of captopril treatment did not alter the specific activities of either Na,K-ATPase isoform. One week or 1 month of captopril administration to diabetic rats did not change the activities of retinal Na,K-ATPase isoforms. Serum ACE activity was elevated significantly in both groups of untreated STZ rats (55% and 40%, respectively). One month of captopril administration further increased the ACE levels in 2- and 4-month diabetic rats (101% and 94%, respectively) and also enhanced significantly the serum ACE activity in normal animals (131%) versus the basal values. In contrast, retinal ACE activity was decreased significantly in both groups of untreated STZ rats (approximately 37%). Captopril exerted a significant inhibitory effect on the retinal ACE activity in 2- and 4-month diabetic rats (37% and 31%, respectively) compared to untreated diabetic animals as well as in normal rats (29%). CONCLUSIONS: These data suggest that stimulation of retinal Na,K-ATPase activity in diabetes is most likely one of the mechanisms through which captopril can improve retinal complications. The effect of captopril seems to be related to local effects in the retina. Whether the inhibition of retinal ACE is part of the mechanism of action of captopril requires further study.     

A Photoluminescence Study of Plasma Reactive Ion Etching-Induced Damage in GaN

Ga N films with reactive ion etching(RIE) induced damage were analyzed using photoluminescence(PL).We observed band-edge as well as donor-acceptor peaks with associated phonon replicas,all in agreement with previous studies.While both the control and damaged samples have their band-edge peak location change with temperature following the Varshni formula,its intensity however decreases with damage while the D–A peak increases considerably.Nitrogen post-etch plasma was shown to improve the band edge peak and decrease the D–A peak.This suggests that the N2 plasma has helped reduce the number of trapped carriers that were participating in the D–A transition and made the D°X transition more active,which reaffirms the N2post-etch plasma treatment as a good technique to heal the Ga N surface,most likely by filling the nitrogen vacancies previously created by etch damage.     

The use of multilayer neural networks in material synthesis

This paper demonstrates the incorporation of a multilayer neural network in semiconductor thin film deposition processes. As a first step toward neural network-based process control, we present results from neural network pattern classification and beam analysis of reflection high energy electron diffraction RHEED images of GaAs/AlGaAs crystal surfaces during molecular beam epitaxy growth. For beam analysis, we used the neural network to detect and measure the intensity of the RHEED beam spots during the growth process and, through Fourier transformation, determined the thin film deposition rate. The neural network RHEED pattern classification and intensity analysis capability allows, powerful in situ real time monitoring of epitaxial thin film deposition processes. Our results show that a three layer network with sixteen hidden neurons and three output neurons had the highest correct classification rate with a success rate of 100% during testing and training on 13 examples     

Etch characteristics of GaN and BN materials in chlorine-based plasmas

Reactive ion etching (RIE) was performed on GaN and BN thin films using chlorine-based plasmas. The optimum chemistry was found to be BCl₃/Cl₂/N₂/Ar and Cl₂/Ar at 30 and 40 mtorr for GaN and BN etching, respectively. X-ray photoelectron spectroscopy (XPS) and Auger electron spectroscopy (AES) analysis of the GaN and BN etched surfaces show a decrease in the surface nitrogen atomic composition and an increase in chlorine impurity incorporation with increasing self-dc bias. A photo-assisted RIE (PA-PIE) process using an IR filtered Xe lamp beam was then used and resulted in improved etch rates and surface composition. Optical emission spectroscopy (OES) measurements have also shown photoenhancement of the etch process.