Amplifier-modulator integrated with a cleaved-coupled-cavity injection laser

We have demonstrated an external amplifier-modulator integrated with a cleaved-coupled-cavity injection laser on the same 1.3 ?m InGaAsP/InP laser chip. The maximum available gain was 20 at an input power of ?19.2 dBm, and it reduced to 10 at an input power of ?10.5 dBm. High on/off extinction ratios and side-mode suppression >100:1 were achieved at about 1 Gbit/s (NRZ) modulation rate.     

Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator

We describe fabrication and performance of a Q-switching cleaved-coupled-cavity laser with an integrated intracavity modulator. The pulse repetition frequency of this 3-section device was tunable between 320 and 450 MHz with an external microwave injected signal, the modulation depth of the pulsations was 80?100% with a nearly single-longitudinal-mode output spectrum, and the Q-switched light pulses were modulated by a pseudorandom PCM signal at 322 Mbit/s.     

Deep level defects in Au/ZnSe Schottky diodes

Properties of deep level defects in heteroepitaxially grown ZnSe have been investigated using transient capacitance spectroscopy. A total of five electron traps were observed with activation energies of 0.33, 0.35, 0.42, 0.71 and 0.86 eV in Au/ZnSe Schottky diodes. Trap concentrations ranged from 1012 to 1014 cm?3.     

High-frequency small-signal modulation characteristics of short-cavity InGaAsP lasers

Measured small-signal frequency-response characteristics of directly modulated long-cavity and short-cavity InGaAsP double-channel buried-heterostructure (DCBH) lasers are reported. Relaxation oscillation resonance frequencies as high as 9.4 GHz at a bias current of twice threshold have been obtained with short-cavity devices.     

2 Gbit/s operation of single-longitudinal-mode 1.5 ?m double-channel planar buried-heterostructure C3 lasers

High-speed operation of cleaved coupled cavity (C3) lasers made from double-channel planar buried-heterostructure (DCPBH) lasers operating at 1.5 ?m wavelength is reported. Error-free (error rate<10?11/s) operation through a spectrometer at a data rate of 2 Gbit/s and with large on-off and mode rejection ratios is demonstrated. Small-signal bandwidth measurements indicate possible operation of these lasers up to about 4 Gbit/s.     

High-temperature operation of 1.55 ?m InGaAsP double-channel buried-heterostructure lasers grown by LPE

High-temperature operation of InGaAsP double-channel buried-heterostructure (DCBH) lasers emitting at 1.55 ?m is reported. The 1.55 ?m InGaAsP DCBH lasers have threshold currents as low as 18 mA at 20°C. The threshold current temperature sensitivity between 10°C and 75°C is characterised by a T0 value of 55?66 K. Electro-optical derivative measurements show that the 1.55 ?m InGaAsP DCBH laser does not have substantial above-threshold leakage current for junction temperatures as high as 75°C. Finally, these devices were operated at temperatures as high as 110°C, the highest CW operating temperature obtained to date for a 1.55 ?m InGaAsP laser.     

11.2 GHz picosecond optical pulse generation in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation

We report the generation of high-speed optical pulses in gain-switched short-cavity InGaAsP injection lasers by high-frequency direct modulation. Short pulses (25 ps) with high on/off ratio were obtained at 11.2 GHz from a short-cavity double-channel planar buried-heterostructure (DCPBH) InGaAsP semiconductor laser biased at three times the threshold current. This is the first report of direct modulation above 10 GHz for InGaAsP lasers.