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Bessemoulin A. Quay R. Ramberger S. Massler H. Schlechtweg M. 《Solid-State Circuits, IEEE Journal of》2003,38(9):1433-1437
The performance of a compact coplanar microwave monolithic integrated circuit (MMIC) amplifier with high output power in the X-band is presented. Based on our 0.3-/spl mu/m gate-length GaAs power pseudomorphic high electron mobility transistor (PHEMT) process on 4-in wafer, this two-stage amplifier, having a chip size of 16 mm/sup 2/, averages 4-W continuous-wave (CW) and 25% mean power-added efficiency (PAE) in the X-band, with more than 18-dB linear gain. Peak output powers of P/sub -1dB/=36.3dBm (4.3 W) and P/sub sat/ of 36.9 dBm (4.9 W) at 10 GHz with a PAE of 50% were also measured. Compared to previously reported X-band coplanar high-power amplifiers, this represents a chip size reduction of 20%, comparable to the size of compact state-of-the-art microstrip power amplifiers. 相似文献
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Mahon J. Convert E. Beasly P.T. Bessemoulin A. Dadello A. Costantini A. Fattorini A. McCulloch M.G. Lawrence B.G. Harvey J.T. 《Microwave Theory and Techniques》2006,54(5):2050-2060
The architecture and design of broadband, highly integrated up- and down-converters in GaAs pHEMT technology is described. Two up-converters and two down-converters have been designed to reduce the complexity and cost of broadband millimeter-wave systems by integrating a number of functions into compact MMICs. Broadband performance was achieved for approximately 17-35GHz (low band) and 30-45 GHz (high band) with up-conversion input-referred,third-order intercept point exceeding 12 and 10 dBm, respectively, with good 2/spl times/ local oscillator leakage and excellent gain control. To the best of the authors' knowledge,this is the highest level of integration achieved for up- and down-converters at these frequencies. 相似文献
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