Cellular Regulation of Kynurenic Acid-Induced Cell Apoptosis Pathways in AGS Cells

Kynurenic acid was included in the three compounds (caffeic acid, chlorogenic acid, and kynurenic acid) that showed high antioxidant and anti-inflammatory potential among the phenolic compounds contained in Gynura procumbens. In this study, the mechanism of cancer cell death induced by kynurenic acid (KYNA), which has the highest molecular binding affinity, in the gastric cancer cell line AGS was confirmed in molecular docking analysis. KYNA showed the most cancer cell death effect on AGS cells among several gastric cancer cell lines (MKN, AGS, and SNU). AGS cells were used for later experiments, and KYNA concentrations of 0, 150, 200, and 250 µM were used. KYNA inhibited cell migration and proliferation in AGS cells in a concentration-dependent manner. G2/M phase cell cycle arrest and reduction of related proteins (Cdc25C, CDK1 and CyclinB1) were confirmed in KYNA-treated AGS cells. Apoptosis of KYNA-treated AGS cells was confirmed by Annexin V/propidium iodide (PI) staining flow cytometry analysis. As a result of morphological chromatin condensation through DAPI (4′,6-diamidino-2-phenylindole), intense blue fluorescence was confirmed. The mechanism of apoptosis induction of KYNA-treated AGS cells was confirmed by western blotting. In the extrinsic pathway, apoptosis induction markers FasL, Fas, and Caspase-3 and -8 were increased in a concentration-dependent manner upon KYNA treatment. In the intrinsic pathway, the expression of anti-apoptotic factors PI3K, AKT, and Bcl-xL was down-regulated, and the expression of apoptosis-inducing factors BAD, Bak, Bax, Cytochrom C, and Caspase-9 was up-regulated. Therefore, in the present study, we strongly imply that KYNA induces apoptosis in AGS gastric cancer cells. This suggests that KYNA, a natural compound, could be the basis for drug for the treatment of gastric cancer.     

Studies on Isolation and Characterization of Starch from Rajgeera Grains (Amaranthus paniculatus Lin.)

Isolation and some of the important physicochemical properties of starch from rajgeera grains have been investigated. The yield of starch was about 61.2%, on whole grain basis. The results on physicochemical properties revealed that it exhibited moderate swelling and higher solubility (55.5%) in water, as compared to other millet starches. An extensive solubility in dimethylsulphoxid (72.5%) of the starch indicated easy penetration of solvent in a granular matrix, may be due to labile and heterogenous bonding forces within the granules. Brabender viscoamylographic data on pasting characteristics revealed that it yielded low viscosity (448 B. U.) at concentration of 10% (w/v) and showed very little tendency to retrograde during cooling of the starch paste. The amylopectin content was 88.5% indicating the starch of rajgeera is probably waxy in nature. Amylolytic digestibility of native and gelatinized starch of rajgeera by human salivary α-amylase and glucoamylase was investigated.     

Functionalization of Graphene Oxide Films with Au and MoOx Nanoparticles as Efficient p‐Contact Electrodes for Inverted Planar Perovskite Solar Cells

A graphene oxide (GO) film is functionalized with metal (Au) and metal‐oxide (MoO_x) nanoparticles (NPs) as a hole‐extraction layer for high‐performance inverted planar‐heterojunction perovskite solar cells (PSCs). These NPs can increase the work function of GO, which is confirmed with X‐ray photoelectron spectra, Kelvin probe force microscopy, and ultraviolet photoelectron spectra measurements. The down‐shifts of work functions lead to a decreased level of potential energy and hence increased V_oc of the PSC devices. Although the GO‐AuNP film shows rapid hole extraction and increased V_oc, a J_sc improvement is not observed because of localization of the extracted holes inside the AuNP that leads to rapid charge recombination, which is confirmed with transient photoelectric measurements. The power conversion efficiency (PCE) of the GO‐AuNP device attains 14.6%, which is comparable with that of the GO‐based device (14.4%). In contrast, the rapid hole extraction from perovskite to the GO‐MoO_x layer does not cause trapping of holes and delocalization of holes in the GO film accelerates rapid charge transfer to the indium tin oxide substrate; charge recombination in the perovskite/GO‐MoO_x interface is hence significantly retarded. The GO‐MoO_x device consequently shows significantly enhanced V_oc and J_sc, for which its device performance attains PCE of 16.7% with great reproducibility and enduring stability.     

Physical properties of sprayed antimony doped tin oxide thin films:The role of thickness

Transparent conducting antimony doped tin oxide（Sb:SnO₂） thin films have been deposited onto preheated glass substrates using a spray pyrolysis technique by varying the quantity of spraying solution.The structural, morphological,X-ray photoelectron spectroscopy,optical,photoluminescence and electrical properties of these films have been studied.It is found that the films are polycrystalline in nature with a tetragonal crystal structure having orientation along the（211） and（112） planes.Polyhedrons like grains appear in the FE-SEM images. The average grain size increases with increasing spraying quantity.The compositional analysis and electronic behaviour of Sb:SnO₂ thin films were studied using X-ray photoelectron spectroscopy.The binding energy of Sn3d_5/2 for all samples shows the Sn⁴⁺ bonding state from SnO₂.An intensive violet luminescence peak near 395 nm is observed at room temperature due to oxygen vacancies or donor levels formed by Sb⁵⁺ ions.The film deposited with 20 cc solution shows 70%transmittance at 550 nm leading to the highest figure of merit(2.11×10^-3Ω^-1). The resistivity and carrier concentration vary over 1.22×10^-3 to 0.89×10^-3Ω·cm and 5.19×10²⁰ to 8.52×10²⁰ cm^-3,respectively.     

(Photo) electrochemical investigations on spray deposited n-CdIn 2Se4 thin film/polysulphide/c photoelectrochemical solar cell1

Cadmium indium selenide (n-CdIn ₂Se₄) thin films have been synthesized by spraying the mixture of an equimolar solutions of cadmium chloride [CdCl₂], indium trichloride [InCl₃] and selenourea [(NH₂)₂CSe] in aqueous media onto preheated fluorine doped tin oxide (FTO) coated glass substrates at optimized parameters of substrate temperature and solution concentration. The photoelectrochemical (PEC) cell configuration of n-CdIn₂Se/(l MNaOH + 1 MNa₂S + 1 M S)/C has been used for investigating the current—voltage (I–V) characteristics under dark and white light illumination, photovoltaic output, spectral response, photovoltaic rise and decay characteristics. The PEC study reveals the thin film of CdIn₂Se₄ exhibits n-type conductivity. The junction quality factor in dark (n _d) and light (n _l), series and shunt resistance (R _s and R _sh), fill factor (FF) and efficiency (η) for the cell have been estimated. The observed efficiency and FF of PEC solar cell is found to be 1.95 and 0.37% respectively. Mott-Schottky plot shows the flat-band potential (V _fb) of n-CdIn₂Se₄/(l M NaOH + 1 M Na₂S + 1 M S)/C cell to be—0.655 V/SCE.     

Studies on morphological and electrical properties of Al incorporated combusted iron oxide

The aluminium incorporated iron oxide samples were prepared by combustion route using aluminium nitrate and ferric trichloride as precursors. The samples were characterized for their morphological, dielectrical, impedance and thermal conductivity properties as a function of temperature. A strong low frequency dielectric dispersion is found to exist in these samples; this is ascribed to the presence of the ionized space charge carriers such as oxygen ion vacancies and interfacial polarization. The room temperature dielectric constant and the loss tangent (tan δ) at 1 kHz are 315 and 0.0855 for optimized 10 at.% Al:Fe₂O₃ sample, respectively. The frequency analysis of dielectric and ac conduction properties of these samples suggests the conduction process in these samples to be via oxygen ion vacancy motion through various defect sites. Impedance spectroscopy is used to characterize the electrical behavior. Results indicate that the relaxation mechanism of the material is temperature and frequency dependent and has dominant bulk contribution in different temperature ranges.     

Sensitized monomer fluorescence and excitation energy transfer in perylene-doped phenanthrene in crystalline and in polymer matrix

Sensitized monomer fluorescence and excitation energy transfer in crystalline and spin cast polymer films was investigated at room temperature. The fluorescence spectra of perylene doped phenanthrene reveals the characteristic monomeric emission of perylene and partial quenching of phenanthrene emission. The excimer formation of perylene is not observed in mixed crystalline luminophors and in spin cast films of the phenanthrene luminophors. The observed quenching of phenanthrene emission indicates the excitation energy transfer from phenanthrene to perylene in crystalline as well as in polymer matrix. Energy transfer is not observed in the experiments when phenanthrene and perylene were physically mixed where the components exist separately. The overlap between the excitation spectrum of perylene and emission spectrum of the phenanthrene supports the fact that the perylene molecules accept the excitation energy from phenanthrene. The energy transfer was found to depend upon the perylene concentration.     

Chemical synthesis and compositional analysis of mixed [Mo(S1 − x Se x )2] semiconductor thin films

The synthesis of binary MoS₂, MoSe₂ and mixed [Mo(S_{1 – x} Sex)₂] thin films onto a glass substrates using arrested precipitation technique (APT) is presented in this investigation. Growth kinetics and mechanism of film formation were studied for these films and are explained in brief. The stoichiometry of the film is confirmed by analyzing films using Extractive spectrophotometric (ESP), atomic absorption spectroscopic (AAS) and electron difftraction X-ray microanalysis (EDAX) techniques. The semiconductor solution containing Mo(VI) and Se(IV) is extracted with N-n-octylaniline in xylene and determined by ESP, AAS and EDAX techniques. Further these films are characterized for its semiconducting behavior to test the suitability of molybdenum chalcogenides as a photoelectrode to convert radiant energy into electricity. It is found that stoichiometry of the film formed by our recently developed arrested precipitation technique (APT) has strong influence on photoconduction in molybdenum chalcogenide photoelectrodes.     

Electrosynthesis and characterization of iron selenide thin films

Iron selenide thin films have been deposited onto stainless steel and fluorine-doped tin oxide (FTO) glass substrates by the electrodeposition process, in potentiostatic mode using ferric chloride (FeCl₃) and selenium dioxide (SeO₂) salts. The deposition mechanism and growth of the films were investigated by cyclic voltammetry and chronoamperometry. The structural, morphological, compositional and optical properties of the deposited films have been studied using X-ray diffraction (XRD), scanning electron microscopy (SEM), EDAX and optical absorption techniques, respectively. XRD studies reveal that the films are polycrystalline with monoclinic crystal structure. The surface morphology study shows that grains are uniformly distributed over the entire surface of the substrate. EDAX study reveals that the iron selenide films are rich in iron. Optical absorption study shows the presence of direct transition with bandgap energy of 1.23 eV.