Simultaneous in situ measurement of film thickness and temperatureby using multiple wavelengths pyrometric interferometry (MWPI)

Film thickness and temperature are two of the most important quantities in semiconductor manufacturing. They play a fundamental role in many standard production techniques like chemical vapor deposition (CVD, LPCVD, PECVD), thermal oxidation and diffusion. They are especially important for more recently developed technologies like molecular beam epitaxy (MBE), metal organic MBE (MOMBE), metal organic CVD (MOCVD), chemical beam epitaxy (CBE), etc. In this paper, an optical in situ method for simultaneous film thickness and temperature measurements-named multiple wavelengths pyrometric interferometry (MWPI)-is introduced, which is capable of high resolution (up to 0.1 nm for thickness and 0.025 K for temperature) and for real time data evaluation. It can be used for process control as well as in situ quality inspection without time delay or additional handling mechanisms and is suitable for monitoring single films as well as multilayer structures. MWPI is insensitive to vibration, rotation and misalignment of the wafer. Due to its optical basis it is also insensitive to hostile environments like high temperature and/or chemical reactive gases     

Hydrogen profiling of Nb-Hf-Nb layers by the N method

Investigations of the behavior of hydrogen in thin Nb-Hf-Nb layers were performed by the nuclear reaction ¹H(¹⁵N, γ)¹²C. The preparation of the samples as well as first studies of the surfaces and interfaces of this system by Auger electron spectroscopy and low-energy electron diffraction are described. The influence of lattice distortions at the metal-metal interfaces on the depth profile of the hydrogen concentration is discussed.