Modern Photodetector IR-Modules

Journal of Communications Technology and Electronics - In recent years, there has been a rapid improvement in photonics products due to the use of multilayer heterostructures grown on the basis of...     

Single and matrix HgCdTe photovoltaic detectors

The recent researches and technological developments of middle and long wavelength infrared HgCdTe photovoltaic detectors are presented. Structure, topology, design and performance of HgCdTe photodiodes, silicon readout electronics, Focal Plane Arrays both staring and time delay and integration types, thermal imagers are discussed. Negative differential conductance, bistability and high frequency oscillations under background infrared radiation in HgCdTe photodiodes are reported.     

Solid-state photoelectronics of the ultraviolet range (Review)

The state-of-the-art of the development of photodetectors and photoreceiving devices operating in the range of electromagnetic radiation 0.1–0.38 μm is presented. A review of the world achievements and tendencies in the development of this field of photoelectronics based on various semiconducting materials is presented. Main physical and engineering problems of the development of ultraviolet photodetector modules designed on the basis of the А^III-N compounds are considered.     

Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements

The characteristics of focal plane arrays (FPAs) based on (quantum-well infrared photodetector) QWIP structures with 384 × 288 elements spaced at the intervals 25 μm are investigated. The difference in spectral and current–voltage characteristics is established for epitaxial QWIP wafers. The output signal is found to vary over the area of photosensitive elements with gradients in different directions. The photoelectric FPA parameters depend strongly on the temperature of the cooled assembly and the bias at the photosensitive element. The noise-equivalent temperature difference is 30 mK at the frame rate 120 Hz and the cooled assembly temperature 65 K.     

Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate

Photoelectric characteristics of a 320 × 256-element focal plane array (FPA) with a pitch of 30 μm, whose photosensitive element is formed in the InSb epitaxial layer deposited on a heavily doped substrate, have been investigated. For a relative aperture of 1: 0.94 and an integration time of 1.46 ms, the mean value of the noise-equivalent temperature difference is 10.5 mK, the percentage of defective elements is 0.12%, and the correction time is more than 3 h. The FPA has been compared to similar commercial devices based on bulk InSb.     

Study of Photodiodes Based on the InGaAs Structure with a Boundary Wavelength of 2.06 μm

Journal of Communications Technology and Electronics - I–V characteristics and spectral photosensitivities of photodiodes based on epitaxially grown hydrides of metal-organic compounds...     

Avalanche Photodiode Array Based on InGaAs/InAlAs/InP Heteroepitaxial Structures with Separated Absorption and Multiplication Regions

Journal of Communications Technology and Electronics - In this paper, we analyze the design features of avalanche photodiode architectures with separated absorption (InGaAs) and multiplication...     

Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Journal of Communications Technology and Electronics - UV visible-blind and solar-blind 320 × 256 photodiode arrays based on AlxGa1 – xN heteroepitaxial structures (AlGaN HES) and...     

Mid-and far-IR focal plane arrays based on Hg1−x CdxTe photodiodes

This review presents the results of the research and development work carried out at the ORION RD&;P Center (Federal State Unitary Enterprise) on HgCdTe photodiodes and focal plane arrays based on solid solutions of mercury and cadmium tellurides for the 3–5 and 8–12 μm spectral ranges. The structure, topology, and parameters of the photodiodes and staring and time-delay-integration focal plane arrays, as well as the structure and circuitry of silicon multiplexers developed for the focal plane arrays, are discussed. The parameters of photodiode arrays of various formats and of a prototype thermal imager based on a 128 × 128 staring focal plane array are presented.     

Short-wavelength infrared array avalanche photodetectors on the basis of InGaAs heteroepitaxial structures

SWIR ADP 320 × 256 FPAs based on p–i–n photodiodes in InGaAs heterostructures have been developed and investigated. The typical InGaAs/InP PIN heterostructures are formed by Metal Organic Vapor Phase Epitaxy (MOVPE) on n⁺ type InP substrates. The InGaAs/InP PIN photodiodes performance have been estimated by measuring current-voltage characteristics. APD arrays are designed using a mesa-passivated avalanche photodiode device array of p–i–n junctions in heterostructure with common absorption and multiplication regions. The optimal operating point for managing avalanche application depended on various factors has been started at 15 V bias and the multiplication coefficient was of 2–4.