Influence of the initiation energy on development of hydrogen–air mixtures combustion in large spherical volumes

We investigate the influence of the initiation energy on the development of burning in hydrogen–air mixtures with an hydrogen content of 7–31% (volume). We initiated the mixtures in the center of the spherical reaction volume, 7–40 m³ in size, by energies from 1 J up to 4600 J. The reaction volume was bordered by a thin rubber envelope and located inside the 910 m³ spherical explosion chamber. We registered the flame front movement by means of the ionization sensors, the video camera, and the high-speed video camera.     

Structure of Profiled Crystals Based on Solid Solutions of Bi<Subscript>2</Subscript>Te<Subscript>3</Subscript> and Their X-Ray Diagnostics

In this work, we used x-ray structural diagnostic data to reveal the formation of structural regularities in profiled polycrystalline ingots based on Bi and Sb chalcogenide solid solutions. In Bi₂Te₃ lattice crystals, the solid phase grows such that the cleavage surfaces are perpendicular to the crystallization front. The crystallization singularity determines the nature of the growth texture. Because texture is an important factor determining the anisotropy of properties, which in turn determines the suitability of an ingot for production of modules and the possibility of figure of merit improvement, its diagnostics is an important issue for technology testing. Examples of texture analysis using the method of straight pole figure (SPF) construction for profiled crystals are provided. The structure of the surface layers in the profiled ingots was studied after electroerosion cutting. In addition, the method of estimation of the disturbed layer depth based on the nature of texture changes was used.     

Analysis of anisotropy of properties on the basis of studies of texture of coarse-grained ingots of thermoelectric materials

An analysis of anisotropy of the properties of a Bi₂Se_0.3Te_2.7 solid solution was carried out using construction of demonstrative surfaces for thermoelectric effectiveness and thermal expansion coefficients. It is shown that the texture is an important factor forming anisotropy of properties and technological fitness of ingots for manufacturing modules. Anisotropy of properties based on the studies of the ingot textures obtained using the float-zone method and Bridgman method (growing thermoelectric plates in a flat cavity) was studied.     

Optical properties of undoped n-AlGaN/GaN superlattices as affected by built-in and external-electric field and by ar-implantation-induced partial disordering

High-resolution x-ray diffraction patterns and 90 K microcathodoluminescence (MCL) spectra were taken for undoped, symmetric AlGaN/GaN superlattices (SLs) with GaN quantum-well (QW) widths of 35 Å and 80 Å. The short-period SL spectra were blue shifted by about 60 meV compared to the GaN substrate, and the magnitude of the blue shift was increased by about 20 meV by application of a reverse bias of ?3 V (electric field of about 4 · 10⁵ V/cm) to a Schottky diode prepared on this SL. A small red shift of about 40 meV compared to GaN was observed for the long-period SL. The two latter observations were interpreted as manifestations of the presence of a strong built-in piezoelectric field, giving rise to the quantum-confined Stark effect (QCSE). Partial disordering of the short-period SL was observed after Ar ion implantation (energy 150 keV, dose 8·10¹³ cm^?2 and 80 keV, 2·10¹³ cm^?2) and subsequent annealing at 1000°C for 3 h under the protective layer of Si₃N₄. However, it was observed that this partial disordering was accompanied by strain relaxation via formation of misfit dislocations or cracks.     

Numerical solutions of optimal-control problems for multidimensional systems by locally one-dimensional schemes

Translated from Kibernetika i Sistemnyi Analiz, No. 4, pp. 174–177, July–August, 1993.     

Optical and structural characteristics of Ga-doped ZnO films

The n-ZnO films doped with Ga to the content 2.5 at % are produced by pulse laser deposition onto the (0001) oriented single crystal sapphire substrates. The transmittance spectra of the ZnO films in the range from 200 to 3200 nm are studied in relation to the Ga dopant content. It is established that an increase in the Ga content shifts the fundamental absorption edge to the blue region, but reduces the transparency of the ZnO films in the infrared spectral region. The dependence of the band gap on the level of doping with Ga is determined. The photoluminescence spectra of the ZnO films doped to different levels are recorded. It is established that the PL intensity and peak position vary unsteadily with the level of doping. X-ray diffraction studies of the structure of the films are carried out. It is found that the crystallographic parameters (the lattice constant c) of the ZnO film depend on the Ga dopant content and the conditions of deposition of the films.