Effect of furosemide and intravenous normal saline fluid load upon the renal resistive index in nonobstructed kidneys in children

Recent literature has shown that relative to baseline the renal resistive index remains unchanged in nonobstructed kidneys and increases in obstructed kidneys after administration of furosemide. To our knowledge the effect upon the renal resistive index of furosemide administered in conjunction with intravenous normal saline fluid load has not been reported. We evaluated the renal resistive index in 13 nonobstructed kidneys in 8 children 6 to 18 years old before and after furosemide and intravenous normal saline fluid load. The mean resistive index decreased from baseline (mean decrease was 0.06 +/- 0.06 standard deviation), with the observation of a resistive index decrease significant to p < 0.005). It appears likely that the combination of an intravenous normal saline fluid load and furosemide caused the resistive index decrease, since a decrease was not observed with furosemide alone; however, these results cannot exclude the possibility that the resistive index decrease was due to the intravenous normal saline fluid load alone. Nonetheless, these data are important since they may provide the foundation for the development of a pharmacologically challenged Doppler sonographic examination using furosemide and intravenous normal saline fluid load to evaluate better potentially obstructed kidneys.     

Explanation of P/E cycling impact on drain disturb in flash EEPROMs under CHE and CHISEL programming operation

The impact of program/erase (P/E) cycling on drain disturb in NOR Flash EEPROM cells under channel hot electron (CHE) and channel-initiated secondary electron (CHISEL) programming operation is studied. Charge gain disturb increases and charge loss disturb decreases after cycling under CHE and CHISEL operation. Carefully designed experiments and fullband Monte Carlo simulations were used to explain this behavior. P/E cycling induced degradation in gate coupling coefficient and the resulting increase in source/drain leakage, reduction in band-to-band tunneling and change in carrier injection area seems to explain well the behavior of CHE and CHISEL drain disturb after cycling.     

On interface and oxide degradation in VLSI MOSFETs. I. Deuteriumeffect in CHE stress regime

This paper analyzes in detail the generation of interface states (N_it) and stress-induced leakage current (SILC) during channel hot electron (CHE) stress experiments in the context of a possible hydrogen/deuterium (H/D) isotope effect. Our results show that N_it generation is related to the hydrogen release (HR) at the Si-SiO₂ interface at relatively high V_G where a large isotope effect is found. Instead, for gate voltages (V_G) favorable for hot hole injection (HHI) the N_it creation becomes a unique function of hole fluence and the isotope effect disappears. In the studied stress conditions, we found no experimental evidence supporting a causal relation between SILC generation and HR because no isotope effect is observed even when the corresponding N_it measurements reveal a very different D/H release rate. Similar to N_it generation, we found that SILC becomes a unique function of hole fluence at low stress V_G. Relevant implications and extensions of these results to the Fowler-Nordheim (FN) tunneling stress conditions are discussed in Pt. II     

Verification of electron distributions in silicon by means of hotcarrier luminescence measurements

This paper investigates the use of hot carrier luminescence (HCL) measurements as a mean for the verification of carrier energy distribution functions in submicron silicon devices subject to high electric fields. To this purpose, physically-based two-dimensional (2-D) simulations of the spectral distribution of HCL are compared with extensive experimental data on special purpose n⁺/n/n⁺ test structures that demonstrate lateral field profiles similar to real MOSFETs without the obscuring effects of a gate electrode. Good agreement between measured and simulated data is observed over wide channel length, bias, and temperature ranges, thus providing for the first time a direct verification of simulated electron energy distributions in a MOSFET-like environment     

Nonstarter lactobacilli isolated from soft and semihard Argentinean cheeses: genetic characterization and resistance to biological barriers

Nonstarter lactic acid bacteria isolated from Argentinean cheeses were identified and characterized by focusing on their resistance to biological barriers, along with other physiological features of potential interest, in the search for future probiotic organisms. Lactobacilli were enumerated and isolated from semihard and soft cheeses made with multistrain Streptococcus thermophilus starters. Lactobacilli counts in 1-week-old cheeses were between 10(5) and 10(7) CFU/g and then reached 10(7) CFU/ g in all 1-month samples, while streptococci were always above 10(9) CFU/g. A total number of 22 lactobacilli isolates were retained, identified, and characterized by in vitro tests. Species identity was determined by carbohydrate metabolism and species-specific PCR assays. Genetic diversity was explored by random amplified polymorphic DNA (RAPD) PCR analysis. The Lactobacillus strains were assigned to the species L. casei, L. plantarum, L. rhamnosus, L. curvatus, L. fermentum, and L. perolens. All the strains studied tolerated 25 ppm of lysozyme, and most of them showed resistance to 0.3% bile. After incubation in gastric solution (pH 2.0), counts decreased by several log units, ranging from 3.2 to 7.0. The strains were able to grow in the presence of bile salts, but only three isolates were capable of deconjugation. The nonstarter lactobacilli that were assayed fermented the prebiotic substrates (especially lactulose and inulin). Some strains showed high cell hydrophobicity and beta-galactosidase activity, as well as inhibitory activity against pathogenic bacteria. It was concluded that most of the lactobacilli isolated in this study demonstrated resistance to biological barriers and physiological characteristics compatible with probiotic properties, which make them suitable for further research in in vivo studies aimed at identifying new probiotic organisms.     

Nonpulsatile arterial waveforms: observations during graded testicular torsion in rats

RATIONALE AND OBJECTIVES: We tested whether testicular torsion could completely damp distal arterial pulsatility, resulting in venous-appearing arterial waveforms. METHODS: Progressively increasing testicular torsion was unilaterally produced in five rats. Doppler waveforms of the testicular artery distal to the torsion were obtained as soon as possible after each level of torsion until a complete absence of pulsatility was noted. RESULTS: One animal was not studied further after the first 180 degrees of torsion occluded flow. In three of the remaining four animals, the testicular artery resistive index (RI) at baseline (0.51, 0.58, 0.64) was within the range of the normal human intratesticular RI and decreased with increasing torsion, culminating in nonpulsatile, venous-appearing waveforms at high degrees of torsion. CONCLUSIONS: Testicular torsion can completely damp arterial pulsatility, resulting in nonpulsatile, venous-appearing arterial Doppler waveforms.     

CHISEL programming operation of scaled NOR flash EEPROMs-effect of voltage scaling, device scaling and technological parameters

The impact of programming biases, device scaling and variation of technological parameters on channel initiated secondary electron (CHISEL) programming performance of scaled NOR Flash electrically erasable programmable read-only memories (EEPROMs) is studied in detail. It is shown that CHISEL operation offers faster programming for all bias conditions and remains highly efficient at lower biases compared to conventional channel hot electron (CHE) operation. The physical mechanism responsible for this behavior is explained using full band Monte Carlo simulations. CHISEL programming efficiency is shown to degrade with device scaling, and various technological parameter optimization schemes required for its improvement are explored. The resulting increase in drain disturbs is also studied and the impact of technological parameter optimization on the programming performance versus drain disturb tradeoff is analyzed. It is shown that by judicious choice of technological parameters the advantage of CHISEL programming can be maintained for deeply scaled electrically erasable programmable read-only memory (EEPROM) cells.     

Degradation of gain in bipolar transistors

In this paper hot carrier related aging of n-p-n bipolar transistors is investigated experimentally and theoretically in order to bring physical insight into the bipolar h_FE (common emitter current gain) degradation. Electrical stress experiments are performed on transistors with different base doping profiles at varying temperatures. Detailed process simulations are performed to determine the doping profiles of the base-emitter junction. Monte Carlo transport simulations are then performed at different temperatures and bias conditions to determine the electron and hole distribution functions in the base-emitter junction. AT&T's 0.8 μm BICMOS technology is used to fabricate the experimental bipolar structures. For this non-self aligned technology we attribute h_FE degradation to the presence of hot holes and secondary electrons which are generated by hot hole impact ionization. This feedback due to impact ionization has a dominant effect on the high energy tails of the distribution of both holes and electrons even when the overall current multiplication is low. Simple hot electron energy transport models do not contain the complexity to properly describe ionization feedback and carrier heating, and are therefore inadequate. An exponential dependence of the transistor lifetime on BV_EBO is deduced for constant voltage stress (V_stressEBO) conditions, confirming the importance of secondaries in the process of degradation     

Silicon MOS transconductance scaling into the overshoot regime

Simulations incorporating velocity overshoot are used to derive the dependence of deep-submicrometer MOS transconductance on low-field mobility μ_eff and channel length L_ch. In contract to strict velocity saturation, saturated transconductance departs from a strict μ_eff/L_ch dependence when overshoot is considered. Constraints on μ_eff derived from conventional scaling laws together with strong μ _eff dependencies in these regimes indicate the importance of low-field inversion layer control and optimization. Transconductance in saturation is shown to approach a well-defined limit for very high μ _eff     

n+-polysilicon gate PMOSFET's with indium dopedburied-channels

In this letter a n⁺-polysilicon gate PMOSFET with indium doped buried-channel is discussed, The gate length scaling of n ⁺-polysilicon gate buried-length PMOSFET's is limited by the channel punch-through effect. Designing shallow counter-doped layers (buried-channels) has been established as a means to reduce the undesirable short channel effects in these devices. Indium, an acceptor dopant in Si, has a low diffusion coefficient and implant statistics favorable for achieving shallow doping layers. Indium implants are explored (as an alternative to BF₂) to counter dope the n-tub for adjusting the threshold voltage. Devices are fabricated using AT&T's 0.5 μm CMOS technology but with t_ox=50 Å. Although no special effort has been made to optimize the n-tub or to take full advantage of the diffusion and implant characteristics of indium, excellent electrical results are obtained for devices with L_eff=0.25 μm. Improved V_th roll-off characteristics and reduced body effect (γ≈0.18 V^½ versus γ_B≈0.40 V^½) in indium implanted buried channels are demonstrated over BF₂ implanted buried channels for PMOSFET's with identical long channel threshold voltages. The effects of incomplete ionization (freeze-out) of the indium acceptor states on the electrical device characteristics are demonstrated by device simulations and measurements