Fabrication and characterization of a planar interleaved micro-transformer with magnetic core

This paper presents the design, the fabrication and the characterization of a planar interleaved micro-transformer with an Yttrium Iron Garnet (YIG) core. The design of this micro-transformer and the manufacturing steps are presented. HFSS software is used for the conception and the simulation of the interleaved magnetic micro-transformer. It is composed of two identical windings. A bottom magnetic core is used to improve the integrated transformer performances. To form the windings, we have used a surface micromachining process. We have also used a negative photoresist (SU-8) as an insulating layer and as support for the fabrication of a bridge to connect the central end of the coils to the ground shield. The micro-transformer have been characterized with impedance meter up to 100 MHz, and completed to 1 GHz using vector network analyzer.     

Experimental Analysis of Punch-Through Conditions in Power P-I- N Diodes

Commercial power diodes are optimized to feature punch-through behavior. However, a tradeoff between the width and the doping level of the diode epitaxial layer leads to various levels of optimization. For a given breakdown voltage, a shorter epitaxial layer width leads to better transient performances. Device datasheets do not cover this issue and a simple experimental setup is presented to assess the optimization conditions inside the diode epitaxial layer. Three commercial devices are tested and experimental results are confronted to device simulations. A good agreement is found     

Avalanche behavior of low-voltage power MOSFETs

This letter addresses the behavior of low voltage power MOSFETs under avalanche, with a paralleling point of view. It is shown that during avalanche, up-to-date technology MOSFET transistors exhibit a resistance far in excess of their on-state resistance (R/sub DSon/). A novel test setup is proposed to measure "avalanche" resistance. A simple model of breakdown voltage is then proposed. It becomes possible to perform fast simulations using this model to study current balance between paralleled transistors under avalanche operation. It is shown that considering avalanche resistance reduces the influence of breakdown voltage mismatches and allows for better current sharing.     

State of the art of high temperature power electronics

High temperature power electronics has become possible with the recent availability of silicon carbide devices. This material, as other wide-bandgap semiconductors, can operate at temperatures above 500 °C, whereas silicon is limited to 150-200 °C. Applications such as transportation or a deep oil and gas wells drilling can benefit. A few converters operating above 200 °C have been demonstrated, but work is still ongoing to design and build a power system able to operate in harsh environment (high temperature and deep thermal cycling).     

Model requirements for simulation of low-voltage MOSFET in automotive applications

This paper focuses on the modeling of low-voltage automotive power electronic circuits to obtain accurate system simulation, including estimation of losses. The aim is to compare several metal-oxide semiconductor field-effect transistor (MOSFET) models to find out which can be used for low-voltage, high-current automotive converter simulations. As these models are intended for system simulation, only analytical models are addressed as they may be implemented into any circuit simulator. The different modes of operation of the switches are described (commutation, synchronous rectification, avalanche...), and several models of the power MOSFET transistor, allowing for simulation in these modes, are presented. Special care is given to the parameter extraction methods and to the interconnection model of the commutation cell. The four test circuits used to identify the low-voltage power MOSFET model parameters are presented. Comparison between simulations and measurements obtained with a calorimeter are then detailed. This measurement method is accurate and offers a simple way to prove the quality of simulation results. It is shown that the parameter identification is of major concern to achieve high accuracy, as classical Spice models can give good results, providing the model parameters are correctly set.     

Turbulent mixing and molecular transport in highly under-expanded hydrogen jets

Highly under-expanded hydrogen jets releasing in quiescent air atmosphere are studied using highly resolved numerical simulations accounting for complex multicomponent molecular transport phenomena. In a first step of the analysis, the main overall features of the hydrogen jet structure are described and compared to those of the classical under-expanded air jet at the same nozzle pressure ratio (NPR). Even if the global flow topology remains quite similar in both cases (i.e., hydrogen and air discharges), the modification of both mean density and mean velocity gradients leads to different relative energy levels for each velocity component. The corresponding change of fluid properties mainly leads to an enhanced mixing at the jet periphery. In comparison to the air case, the turbulence development within the internal part of the under-expanded hydrogen jet surrounding the subsonic core also yields a different structure. While a significantly higher peak of streamwise turbulent stress is observed downstream of the reflected shock, the vorticity dynamics is dampened by viscous diffusion and velocity divergence (i.e., volumetric expansion) contributions. Then, the performance of the simplified Hirschfelder and Curtiss approximation of the multicomponent molecular diffusion phenomena is evaluated with respect to the detailed multicomponent transport representation, as deduced from the EGLIB library. The detailed representation of molecular phenomena is shown to have a significant influence on the estimated local levels of hydrogen mass flux, leading to a non-negligible alteration of the global jet structure.