Influence of source-drain series resistance on MOSFET field-effect mobility

A simple but general model for explaining the series resistance dependence of transconductance and field-effect mobility is developed in the letter. This model, which enables a quantitative analysis of series resistance effects on the maximum mobility and the corresponding gate voltage, has been successfully tested on short-channel MOSFETs with various channel lengths and external series resistances.     

Experimental determination of short-channel MOSFET parameters

In this paper we present a new method of determining the principal parameters for short-channel MOSFET modelling: V_T, μ₀, θ, ΔL and R_SD. They are deduced from the experimental curves I_D(V_G) (for small drain voltages) and I_D(V_D) (for relatively large gate voltages) curves. The main assumption is that the devices fabricated on the same silicon chip have the same technological reduction of transistor channel length and the same series resistance of source and drain. Our method takes advantageously into account (a) a new accurate determination of the threshold voltage and (b) the variation of the low-field mobility with channel length. Results obtained by applying this method to short-channel devices are given and discussed.