排序方式: 共有1条查询结果,搜索用时 15 毫秒
1
1.
Akil. K. Sutton Kurt Moen John D. Cressler Martin A. Carts Paul W. Marshall Jonathan A. Pellish Vishwa Ramachandran Robert A. Reed Michael L. Alles Guofu Niu 《Solid-state electronics》2008,52(10):1652-1659
We present the first experimental results confirming the increased SEE sensitivity of SiGe digital bipolar logic circuits operating in a 63 MeV proton environment at cryogenic temperatures. A 3× increase in both the error-event and bit-error cross sections is observed as the circuits are cooled from 300 K to 77 K, with error signature analyses indicating corresponding increases in the average number of bits-in-error and error length over data rates ranging from 50 Mbit/s to 4 Gbit/s. Single-bit-errors dominate the proton-induced SEU response at both 300 K and 77 K, as opposed to the multiple-bit-errors seen in the heavy-ion SEU response. Temperature dependent substrate carrier lifetime measurements, when combined with calibrated 2 D DESSIS simulations, suggest that the increased transistor charge collection at low temperature is a mobility driven phenomenon. Circuit-level RHBD techniques are shown to be very efficient in mitigating the proton- induced SEU at both 300 K and 77 K over the data rates tested. These results suggest that the circuit operating temperature must be carefully considered during component qualification for SEE tolerance and indicate the need for broad-beam heavy-ion testing at low temperatures. 相似文献
1