Reliability investigation of 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel

The authors have investigated the reliability performance of G-band (183 GHz) monolithic microwave integrated circuit (MMIC) amplifiers fabricated using 0.07-/spl mu/m T-gate InGaAs-InAlAs-InP HEMTs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel on 3-in wafers. Life test was performed at two temperatures (T/sub 1/ = 200 /spl deg/C and T/sub 2/ = 215 /spl deg/C), and the amplifiers were stressed at V/sub ds/ of 1 V and I/sub ds/ of 250 mA/mm in a N/sub 2/ ambient. The activation energy is as high as 1.7 eV, achieving a projected median-time-to-failure (MTTF) /spl ap/ 2 /spl times/ 10/sup 6/ h at a junction temperature of 125 /spl deg/C. MTTF was determined by 2-temperature constant current stress using /spl Delta/G/sub mp/ = -20% as the failure criteria. The difference of reliability performance between 0.07-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with pseudomorphic In/sub 0.75/Ga/sub 0.25/As channel and 0.1-/spl mu/m InGaAs-InAlAs-InP HEMT MMICs with In/sub 0.6/Ga/sub 0.4/As channel is also discussed. The achieved high-reliability result demonstrates a robust 0.07-/spl mu/m pseudomorphic InGaAs-InAlAs-InP HEMT MMICs production technology for G-band applications.     

Effects of flux enhancing polymer on the characteristics of sludge in membrane bioreactor process.

A newly developed membrane performance enhancer (MPE) was used to prevent membrane fouling in a membrane bioreactor (MBR) process. It transpired that 1,000 mg/l of MPE reduced polysaccharide levels from 41 mg/I to 21 mg/I on average under the experimental condition. Repeated experiments also confirmed that 50-1,000 mg/l of MPE could reduce membrane fouling significantly and increase the intervals between membrane cleanings. Depending on MPE dosages and experimental conditions, trans-membrane pressure (TMP) increase was suppressed for 20-30 days, while baseline TMP surged within a few days. In addition, MPE allowed MBR operation even at 50,000 mg/l of total solid and reduced permeate COD. However, no evidence of toxicity for sludge was found from respiratory works.     

Enhanced electron emission from phosphorus-doped diamond-cladsilicon field emitter arrays

Undoped and phosphorus (P)-doped diamond-clad Si field emitter arrays have been successfully fabricated using microwave plasma chemical vapor deposition (MPCVD) technology. The electron emission from the blunt diamond-clad microtips are much higher than those for the pure Si tips with sharp curvature due to a lower work function. Furthermore, the characteristics of emission current against applied voltage for the P-doped diamond-clad tips show superior emission at lower field to the undoped ones. After the examination of Auger electron spectroscopy (AES) and electrical characteristics of as-grown diamond, such a significant enhancement of the electron emission from the P-doped diamond-clad tips is attributed to a higher electron conductivity and defect densities     

A newly robust controller design for the position control ofpermanent-magnet synchronous motor

A robust controller which is designed by employing variable-structure control and linear-quadratic method is presented for a permanent-magnet synchronous motor (PMSM) position control system. It is to achieve accurate control performance in the presence of plant parameter variation and load disturbance. In addition, it possesses the design flexibility of the conventional state feedback control. It is applied to the position control of a PMSM. Simulation and experimental results show that the proposed approach gives a better position response and is robust to parameter variations and load disturbance     

Ultralow sidelobe-level integrated acoustooptic tunable filtersusing tapered-gap surface acoustic wave directional couplers

We propose a new weighted-coupling scheme using tapered-gap surface acoustic wave directional couplers for realization of ultralow sidelobe-level integrated acoustooptic tunable filters (IAOTF's). Appropriate design analysis has been carried out for 30-mm-long filters operating at an optical wavelength of 1.55 μm in an X-cut Y-propagating LiNbO₃ substrate. New synthesized weighting functions have been used for the improvement of sidelobe level suppression over existing single-stage filters by as much as 27 dB. The -20 dB mainlobe width of the resulting IAOTF's varies from 2.7 to 3.9 nm only for the worst sidelobe levels ranging from -30.6 to -44.7 dB, respectively. It has also been shown that further suppression of sidelobe levels by 3-9 dB is possible if the filter is underdriven at 80% mode-conversion efficiency     

P-N double quantum well resonant interband tunneling diode withpeak-to-valley current ratio of 144 at room temperature

The current-voltage characteristics of the P-N double quantum well resonant interband tunneling (RIT) diodes in InAlAs-InGaAs system have been improved in this letter. The peak-to-valley current ratio (PVCR) is as high as 144 at room temperature. As we know, this is the highest room temperature PVCR ever reported in any tunneling devices. Moreover, the influence of the central barrier thickness varying from 10 Å to 30 Å on the device characteristics is also studied     

A new process of fabricating inverted-staggered tri-layer thin-filmtransistors

A new method of fabricating a-Si:H TFT with etching-stop structure has been proposed. Only one plasma-enhanced chemical vapor deposition is required in this new method and a PH₃/H₂ plasma treatment during the deposition has been used to form the TFT contact and thus saved another plasma deposition. With this method, a TFT of 500 Å active layer has been fabricated successfully. The drain current and saturation mobility of this device is 2.4×10^-7 A and 0.1 cm²/V sec, respectively, which is comparable to the conventional fabricating method. The plasma treatment will also form an additional leakage path on the TFT top surface and increase the TFT subthreshold slope. However, a current of less than 1 pA at V_G=-2.4 V can still be obtained. The possible mechanism of the contact formation by the plasma treatment is also discussed     

Utilize bootstrap in small data set learning for pilot run modeling of manufacturing systems

If the production process, production equipment, or material changes, it becomes necessary to execute pilot runs before mass production in manufacturing systems. Using the limited data obtained from pilot runs to shorten the lead time to predict future production is this worthy of study. Although, artificial neural networks are widely utilized to extract management knowledge from acquired data, sufficient training data is the fundamental assumption. Unfortunately, this is often not achievable for pilot runs because there are few data obtained during trial stages and theoretically this means that the knowledge obtained is fragile. The purpose of this research is to utilize bootstrap to generate virtual samples to fill the information gaps of sparse data. The results of this research indicate that the prediction error rate can be significantly decreased by applying the proposed method to a very small data set.