A Nonvolatile Organic Memory Device Using ITO Surfaces Modified by Ag‐Nanodots

We report on a single‐layer organic memory device made of poly(N‐vinylcarbazole) embedded between an Al electrode and ITO modified with Ag nanodots (Ag‐NDs). Devices exhibit high ON/OFF switching ratios of 10⁴. This level of performance could be achieved by modifying the ITO electrodes with some Ag‐NDs that act as trapping sites, reducing the current in the OFF state. Temperature dependence of the electrical characteristics suggest that the current of the low‐resistance state can be attributed to Schottky charge tunnelling through low‐resistance pathways of Al particles in the polymer layer and that the high‐resistance state can be controlled by charge trapping by the Al particles and Ag‐NDs.     

Organic field-effect transistor circuits using atomic layer deposited gate dielectrics patterned by reverse stamping

We report on a reverse stamping method to produce via-holes in circuits comprising acene-based top-gate organic field-effect transistors (OFETs) having a CYTOP/Al₂O₃ (by atomic layer deposition) bilayer gate dielectric. This method relies on the weak adhesive force that exists between a small molecule acene film and a polymer to enable easy delamination of the bilayer gate dielectric by using a PDMS stamp. We demonstrate the effectiveness of this method by fabricating simple circuits using top-gate triisopropylsilylethynyl pentacene (TIPS-pentacene)/poly (triarylamine) (PTAA) OFETs.     

The modification of indium tin oxide with phosphonic acids: mechanism of binding, tuning of surface properties, and potential for use in organic electronic applications

Transparent metal oxides, in particular, indium tin oxide (ITO), are critical transparent contact materials for applications in next-generation organic electronics, including organic light emitting diodes (OLEDs) and organic photovoltaics (OPVs). Understanding and controlling the surface properties of ITO allows for the molecular engineering of the ITO-organic interface, resulting in fine control of the interfacial chemistries and electronics. In particular, both surface energy matching and work function compatibility at material interfaces can result in marked improvement in OLED and OPV performance. Although there are numerous ways to change the surface properties of ITO, one of the more successful surface modifications is the use of monolayers based on organic molecules with widely variable end functional groups. Phosphonic acids (PAs) are known to bind strongly to metal oxides and form robust monolayers on many different metal oxide materials. They also demonstrate several advantages over other functionalizing moieties such as silanes or carboxylic acids. Most notably, PAs can be stored in ambient conditions without degradation, and the surface modification procedures are typically robust and easy to employ. This Account focuses on our research studying PA binding to ITO, the tunable properties of the resulting surfaces, and subsequent effects on the performance of organic electronic devices. We have used surface characterization techniques such as X-ray photoelectron spectroscopy (XPS) and infrared reflection adsorption spectroscopy (IRRAS) to determine that PAs bind to ITO in a predominantly bidentate fashion (where two of three oxygen atoms from the PA are involved in surface binding). Modification of the functional R-groups on PAs allows us to control and tune the surface energy and work function of the ITO surface. In one study using fluorinated benzyl PAs, we can keep the surface energy of ITO relatively low and constant but tune the surface work function. PA modification of ITO has resulted in materials that are more stable and more compatible with subsequently deposited organic materials, an effective work function that can be tuned by over 1 eV, and energy barriers to hole injection (OLED) or hole-harvesting (OPV) that can be well matched to the frontier orbital energies of the organic active layers, leading to better overall device properties.     

Polydimethylsiloxane as a macromolecular additive for enhanced performance of molecular bulk heterojunction organic solar cells

The effect of the macromolecular additive, polydimethylsiloxane (PDMS), on the performance of solution processed molecular bulk heterojunction solar cells is investigated, and the addition of PDMS is shown to improve device power conversion efficiency by ～70% and significantly reduce cell-to-cell variation, from a power conversion efficiency of 1.25 ± 0.37% with no PDMS to 2.16 ± 0.09% upon the addition of 0.1 mg/mL PDMS to the casting solution. The cells are based on a thiophene and isoindigo containing oligomer as the electron donor and [6,6]-phenyl-C61 butyric acid methyl ester (PC(61)BM) as the electron acceptor. PDMS is shown to have a strong influence on film morphology, with a significant decrease in film roughness and feature size observed. The morphology change leads to improved performance parameters, most notably an increase in the short circuit current density from 4.3 to 6.8 mA/cm(2) upon addition of 0.1 mg/mL PDMS. The use of PDMS is of particular interest, as this additive appears frequently as a lubricant in plastic syringes commonly used in device fabrication; therefore, PDMS may unintentionally be incorporated into device active layers.     

基于UG的膨胀套管螺纹接头参数化建模

膨胀套管螺纹接头优化设计分析时需要反复修改接头参数,高效快速建立接头三维模型,本文提出了两种利用UG软件进行膨胀套管螺纹接头参数化建模的方法.在UG中完成接头模型样板后,第一种方法通过Visual Studio开发平台编写程序得到一个可改变结构参数的可执行程序,实现膨胀套管接头二次开发建模;另一种方法是基于PTS模块完...     

High-performance inverted top-emitting green electrophosphorescent organic light-emitting diodes with a modified top Ag anode

Green electrophosphorescent inverted top-emitting organic light-emitting diodes with a Ag/1,4,5,8,9,11-hexaazatriphenylene hexacarbonitrile (HAT-CN) anode are demonstrated. A high current efficacy of 124.7 cd/A is achieved at a luminance of 100 cd/m² when an optical outcoupling layer of N,N′-di-[(1-naphthyl)-N,N′-diphenyl]-1,1′-biphenyl-4,4′-diamine (α-NPD) is deposited on the anode. The devices have a low turn-on voltage of 3.0 V and exhibit low current efficacy roll-off through luminance values up to 10,000 cd/m². The angle dependent spectra show deviation from Lambertian emission and color change with viewing angle. Hole-dominated devices with Ag/HAT-CN electrodes show current densities up to three orders of magnitude higher than devices without HAT-CN.     

Pentacene organic field-effect transistors with polymeric dielectric interfaces: Performance and stability

Low-voltage pentacene organic field-effect transistors (OFETs) with different gate dielectric interfaces are studied and their performance in terms of electrical properties and operational stability is compared. Overall high electrical performance is demonstrated at low voltage by using a 100 nm-thick high-κ gate dielectric layer of aluminum oxide (Al₂O₃) fabricated by atomic layer deposition (ALD) and modified with hydroxyl-free low-κ polymers like polystyrene (PS), divinyltetramethyldisiloxane-bis(benzocyclobutene) (BCB) (Cyclotene™, Dow Chemicals), and as well as with the widely used octadecyl-trichlorosilane (OTS). Devices with PS and BCB dielectric surfaces exhibit almost similar electrical performance with high field-effect mobilities, low subthreshold voltages, and high on/off current ratios. The higher mobility in pentacene transistors with PS can be correlated to the better structural ordering of pentacene films, as demonstrated by atomic force microscopy (AFM) images and X-ray diffraction (XRD). The devices with PS show good electrical stability under bias stress conditions (V_GS = V_DS = −10 V for 1 h), resulting in a negligible drop (2%) in saturation current (I_DS) in comparison to that in devices with OTS (12%), and to a very high decay (30%) for the devices with BCB.