Er3+-doped Al2O3 thin films byplasma-enhanced chemical vapor deposition (PECVD) exhibiting a 55-nmoptical bandwidth

We report the first deposition of Er³⁺-doped aluminum oxide thin-film optical waveguides by plasma-enhanced chemical vapor deposition (PECVD). The aluminum and erbium precursors used for the deposition of the thin films were trimethyl-aluminum and Er tri-chelate of 2,2,6,6-tetramethylheptane-3,5 dione respectively. The samples show broad, room-temperature photoluminescence at λ=1.533 μm. The Er³⁺ concentration ranged from 0.01-0.2 at%. The full width half maximum (FWHM) of the Er³⁺ emission spectrum is 55 nm, considerably broader than in silica glass. The radiative lifetime has been measured at 50-mW pump power     

Improved gain performance in Yb3+-sensitized Er3+-doped alumina (Al2O3) channel opticalwaveguide amplifiers

Small-signal amplification in short, Yb³⁺-sensitized, Er³⁺-doped alumina (Al₂O₃) channel optical waveguides with high Er³⁺ concentrations is analyzed. Taking into account uniform up conversion, excited state absorption (ESA) from the Er³⁺ metastable level (⁴I_13/2 ), and Yb³⁺→Er³⁺ energy transfer by cross relaxation, the obtainable gain improvements compared to Yb³⁺ -free Er³⁺-doped Al₂O₃ optical waveguides are investigated. The amplifier model is based on propagation and population rate equations and is solved numerically by combining finite elements and the Runge-Kutta algorithm. The analysis predicts that 5-cm long Yb³⁺/Er³⁺ co-doped Al₂O ₃ waveguides show 13-dB net signal gain for 100 mW pump power at λ_p=980 nm     

Lossless stripe waveguide optical beam splitter: modeling of theY-structure

We present a theoretical model of a loss-compensated symmetric Y-junction acting as an optical beam splitter. We consider silica (SiO ₂) channel waveguides which are assumed to be highly doped with Er³⁺. The model was developed using the beam propagation method (BPM) and a fast-Fourier-transform (FFT)-based algorithm. The analysis showed that considerable gain levels, about 4.2 dB/cm at each port of the Y-junction, can be achieved for erbium concentration 2.5×10²⁰ ions/cm³, signal power 1 μW and pump power 250 mW     

Er3+-doped channel optical waveguide amplifiers for WDMsystems: a comparison of tellurite, alumina and Al/P silicate materials

Er³⁺-doped tellurite and Er³⁺-doped alumina optical waveguide amplifiers are analyzed both as single amplifiers and as elements of 16-channel wavelength-division multiplexing (WDM) systems; their performances are compared with that from Er³⁺-doped Al/P silica waveguide amplifiers. The amplifier model is based on propagation and population-rate equations and includes both uniform and pair-induced up-conversion mechanisms. It is solved numerically by combining finite elements and the Runge-Kutta algorithm. The analysis predicts that Er³⁺-doped tellurite waveguides exhibit improved gain characteristics compared with alumina and Al/P silica waveguides. Using Er³⁺-doped tellurite waveguide amplifiers, it is suggested that 16 WDM channels may be transmitted to a maximum distance of 4250 km. By using in-line notch gain equalizing filters, the maximum transmission distance can be increased to 5250 km