Influence of surfactants on rheological behaviors of polyacrylonitrile/dimethyl sulfoxide/silicon blending polymer solutions

KH550, KH560, CTAB, and F127 were adopted to modify silicon (Si) to improve the dispersity and stability of Si in the polyacrylonitrile/dimethyl sulfoxide (PAN/DMSO) polymer solutions. The influence of surfactants on rheological behaviors of PAN/DMSO/Si blending polymer solutions was investigated by an advanced solution and melt rotation rheometer. The homogeneity and stability were also studied. The results showed that the surfactants could change the viscosity dependence of blending polymer solutions on shear rate, temperature and storage time by increase the steric hindrance of Si. Among the four solutions, PAN/DMSO/Si blending polymer solution with F127 exhibited the lowest viscosity, activation energy and the smallest structural viscosity index and exhibited the trend close to the Newtonian fluids. Moreover, PAN/DMSO/Si blending polymer solution with F127 exhibited the best dispersity and stability, indicating its best physical properties and machinability.     

High-performance MIM capacitor using ALD high-k HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectrics

For the first time, we successfully fabricated and demonstrated high performance metal-insulator-metal (MIM) capacitors with HfO/sub 2/-Al/sub 2/O/sub 3/ laminate dielectric using atomic layer deposition (ALD) technique. Our data indicates that the laminate MIM capacitor can provide high capacitance density of 12.8 fF//spl mu/m/sup 2/ from 10 kHz up to 20 GHz, very low leakage current of 3.2 /spl times/ 10/sup -8/ A/cm/sup 2/ at 3.3 V, small linear voltage coefficient of capacitance of 240 ppm/V together with quadratic one of 1830 ppm/V/sup 2/, temperature coefficient of capacitance of 182 ppm//spl deg/C, and high breakdown field of /spl sim/6 MV/cm as well as promising reliability. As a result, the HfO/sub 2/-Al/sub 2/O/sub 3/ laminate is a very promising candidate for next generation MIM capacitor for radio frequency and mixed signal integrated circuit applications.     

A new polysilicon CMOS self-aligned double-gate TFT technology

In this paper, a new polysilicon CMOS self-aligned double-gate thin-film transistor (SA-DG TFT) technology is proposed and experimentally demonstrated. The self-alignment between the top- and bottom-gate is realized by a backlight exposure technique. The structure has an ultrathin channel region (300 /spl Aring/) and a thick source/drain region. Experimental results show that this technology provides excellent current saturation due to a combination of the effective reduction in the drain field and the full depletion of the ultrathin channel. Moreover, for n-channel devices, the SA-DG TFT has a 4.2 times higher on-current (V/sub gs/=20V) as compared to the conventional single-gate TFT. Whereas for the p-channel devices, the SADG TFT has a 3.6 times higher on-current (V/sub gs/=-20V) compared to the conventional single-gate device.     

快速烧结法制备连续碳化硅纤维

通过熔融纺丝，不熔化处理制得连续聚碳硅烷（ＰＣＳ）不熔化纤维，采用快速烧结方法制备出性能较好的连续ＳｉＣ纤维。探讨了气封条件的选择，以及烧结速度对ＳｉＣ纤维的组成，结构及性能的影响。结果表明，快速烧结条件下，可以实现向纤维上施加张力以及纤维的无机化转变，烧结速度加快会降低纤维的Ｃ／Ｓｉ（原子比），同时有利于提高纤维的抗拉强度和热稳定性。     

聚碳硅烷的分子量分布与可纺性研究

阐述了聚碳烷的合成及其分子量分布，讨论了高低分子含量对聚碳硅烷熔点及可纺性的影响，而且提出了分子量分布的控制标准与方法。     

厚度控制技术在中厚板轧制生产中的应用

本文探讨了影响中厚板厚度波动的因素，结合安钢中板厂2800mm轧机按合同轧制一批交货重量不大于理论重量船板的生产实践，总结了实际生产中实现高精度厚度控制的有效方法。     

关于布尔函数的二次逼近

本文首先利用矩阵形式引入了二阶ｗａｌｓｈ谱的概念并讨论了其性质，其次引入了二次ｂｅｎｔ函数的概念，同时论述了二次ｂｅｎｔ函数的密码学意义。     

XD－YES：IC功能成品率模拟器的实现

首先建立缺陷空间分布和粒径分布的模型，并讨论了缺陷通过版图产生电路错误的过程，给出了ＩＣ功能成品率模拟器ＸＤ－ＹＥＳ的实现。用ＸＤ－ＹＥＳ对微电子测试图和实际ＩＣ的功能成品率模拟和分析表明，其结果与实际符合很好，从而表明ＸＤ－ＹＥＳ的可行性和实用性。     

In-situ Formed AIN Particulates and TiN Whiskers Mixture Reinforced Al Composite

The TiNw-AINp/Al composite has been successfully fabricated by gas-liquid reaction method in an intensive electromagnetic mixing and casting in an appropriate cooling condition. The as-cast samples of the composite exhibit a homogeneous distribution of TiNw and AINp, and the in situ formed TiN whisker has a mean diameter of 0.5 μm and mean aspect ratio of 5.8~7.5, and the diameter of the AIN particulates is less than 5 μm. TEM observation indicates that there exist some submicron and nanometer sized in situ formed TiNw-AINp in α-Al matrix. The formation mechanism of in situ formed TiNw and AINp is also discussed