TDOA-based acoustic source localization in the space–range reference frame

In this paper we consider a class of geometric methods for acoustic source localization based on range differences (or time differences of arrival), and we offer a new and unifying perspective on such methods based on the adoption of a multidimensional reference frame obtained by adding the range difference coordinate to the spatial coordinates of the source. In this extended coordinate system the working principles of a wide range of source localization methods becomes clear and immediate. The space–range reference frame, however, has a practical purpose as well, as it can be used for gaining insight on why some configurations of microphones lead to better localization performance than others and it suggests methods for improving existing localization techniques. In particular, we derive a closed-form solution of the constrained least-squares localization problem for linear arrays of microphones.     

Comparison of Modeling Approaches for the Capacitance–Voltage and Current–Voltage Characteristics of Advanced Gate Stacks

In this paper, we compare the capacitance-voltage and current-voltage characteristics of gate stacks calculated with different simulation models developed by seven different research groups, including open and closed boundaries approaches to solve the Schroumldinger equation inside the stack. The comparison has been carried out on template device structures, including pure SiO₂ dielectrics and high-kappa stacks, forcing the use of the same physical parameters in all models. Although the models are based on different modeling assumptions, the discrepancies among results in terms of capacitance and leakage current are small. These discrepancies have been carefully investigated by analyzing the individual modeling parameters and the internal quantities (e.g., tunneling probabilities and subband energies) contributing to current and capacitance     

Characterization of transient currents in HfO2 capacitors in the short timescale

We present a detailed experimental investigation of transient currents in HfO₂ capacitors in the short timescale. We show that the transient currents flowing through the capacitor plates when the gate voltage is reset to zero after a low voltage stress period follow a power-law time dependence t^−α (with α ? 1) over more than eight decades of time and down to the μs timescale. As transient currents in HfO₂ are largely increased with respect to the SiO₂ case, these results confirm that transient effects can be a severe issue for the successful integration of high-k dielectrics.     

Editorial: Biologically Inspired Networking

Mobile Networks and Applications -     

Investigation of the RTN amplitude statistics of nanoscale MOS devices by the statistical impedance field method

This paper presents a numerical investigation of the random telegraph noise amplitude in nanoscale MOS devices based on the statistical impedance field method. This method allows a strong reduction of the computational burdens required for the calculation of the amplitude statistics with respect to conventional Monte Carlo models based on the numerical implementation of microscopic differences on the simulated device structure, allowing the exploration of lower probability levels. Despite a rather good estimation of the amplitude statistics, however, the method results in relevant inaccuracies when looking at the single Monte Carlo samples, due to the linear approximations involved.     

Comprehensive numerical simulation of threshold-voltage transients in nitride memories

A new non-local algorithm for accurately calculating the band-to-band tunneling current suitable for TCAD semiconductor simulators is proposed in this paper. The proposed algorithm captures the essential physics of multi-dimensional tunneling in a 2D structure, and is designed to be robust and to achieve independence on the mesh grid. The new algorithm enables accurate modeling of T-FET and investigation of its device physics.     

Process simulation of hydrogen production by steam reforming of diluted bioethanol solutions: Effect of operating parameters on electrical and thermal cogeneration by using fuel cells

The possibility to exploit diluted bioethanol streams is discussed for hydrogen production by steam reforming. An integrated unit constituted by a steam reformer, a hydrogen purification section with high- and low-temperature water gas shift, a methanator reactor and a fuel cell were simulated to achieve residential size cogeneration of 5 kW electrical power + 5 kW thermal power as target output.Process simulation allowed to investigate the effect of the reformer temperature, of bioethanol concentration and of catalyst loading on the temperature and concentration profiles in the steam reformer. The net power output was also calculated on the basis of 27 different operating conditions.P_electrical output ranging from 3.3 to 6.0 kW were obtained, whereas the total heat output P_{thermal, total} ranged from 3.9 to 7.2 kW. The highest overall energy output corresponded to P_electrical = 4.8 kW, P_{Thermal, FC} = 3.1 kW, P_{heat recovery} = 4.1 kW, for a total 12 kW energy output. This was achieved by feeding a mixture with water/ethanol ratio = 11 (mol/mol), irrespectively of the catalyst mass, and setting the ref split temperature so to have an average temperature of 635 °C in the ESR reactor.     

Silicon nanocrystal memories: a status update

In the last decade, the silicon nanocrystal memory technology has received widespread interests from the scientific community working in the field of non-volatile solid-state memories, considering it as a feasible candidate for the post-Flash scenario. The immunity to stress-induced leakage current and the reduction of parasitic floating-gate capacitive couplings make the nanocrystal technology very attractive, especially when considering the CMOS compatible process flow. However, many open issues still exist for its development, first of all concerning its scaling perspectives. Starting from the discussion of the basic principles of nanocrystal storage, in this paper we review the major benefits and the open challenges of the silicon nanocrystal memory technology.