Omissions and errors in "Media violence and the American public."

Comments on an article by Bushman and Anderson (see record 2001-17729-001). We are concerned that Bushman and Anderson's article on media violence contains data that are incorrect or irreproducible. This is a serious issue; the article has already been referenced by numerous other formal papers according to a Google scholarly article search as well as in a statement to the U.S. Senate, in legal proceedings, and in California State law (Assembly Bill 1179 in 2005). (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Preparation and characterization of high molecular weight poly(hydroxy ethers) with unusually high glass transition temperatures

A series of novel poly(hydroxy ethers) have been prepared via polymerization of the diglycidyl ethers of bisphenol-A ( 4 ), 4,4 ′-tribromotetramethylbiphenol ( 6a ), and 4,4 ′-tetrabromotetramethylbiphenol ( 6b ) with a variety of rigid diols in an effort to systematically modify structural features of the phenoxy repeat unit in order to control the torsional mobility of polymer backbones and produce materials with softening temperatures higher than are typical for the class. The resulting poly(hydroxy ethers) displyed glass transition temperatures ranging from 109 to 242°C. There of the polymers were characterized with respect to tensile and impact properties and were compared to the polymer sythesized from bisphenol-A ( 1 ) and bisphenol-A diglycidyl ether ( 4 ).     

Scalable digital hardware for a trapped ion quantum computer

Quantum Information Processing - Many of the challenges of scaling quantum computer hardware lie at the interface between the qubits and the classical control signals used to manipulate them....     

A 3.125 Gb/s limit amplifier in CMOS with 42 dB gain and 1 /spl mu/s offset compensation

A fast offset compensation method for high-gain amplifiers is presented that leverages a novel peak detector design and a dynamic, multi-tap feedback system to achieve roughly three orders of magnitude improvement in settling time over traditional compensation methods. Design tradeoffs between gain, bandwidth, power dissipation, and noise performance of the limit amplifier are discussed. Measured results of a custom 3.125 Gb/s limit amplifier in 0.18 /spl mu/m CMOS employing the proposed compensation technique demonstrate a sub-1-ms settling time while still achieving less than 4 ps rms output jitter with a 2.5 mV peak-to-peak input at 2.5 Gb/s.     

A selectively deposited poly-gate ITLDD process with self-alignedLDD/channel implantation

An inverse-T lightly doped drain (ITLDD) CMOS process which features improved hot-carrier effects and self-aligned source/drain and channel implantation profiles is presented. Compensation effects by the heavy channel doping on the light N^-/P^- profile are minimized in this ITLDD structure, because the implants are self-aligned to the polysilicon-gate edge. In addition, because selective polysilicon deposition rather than an incomplete poly-gate etchback is used to define the ITLDD structure, a simpler, more manufacturable process is obtained due to improved control of the thin poly-gate shelf thickness