The Effects of Scaling and Bias Configuration on Operating-Voltage Constraints in SiGe HBTs for Mixed-Signal Circuits

This paper presents a comprehensive picture of operating-voltage constraints in SiGe heterojunction bipolar transistors, addressing breakdown-related issues as they relate to technology generation, bias configuration, and operating-current density. New definitions for breakdown voltage, adopted from standard measurements, are presented. Practical design implications and physical origins of breakdown are explored using calibrated 2-D simulations and quasi-3-D compact models. Device-level analysis of ac instabilities and power performance, which is relevant to mixed-signal circuit design, is presented, and implications of the relaxed voltage constraints for common-base operation are explored.     

Si/SiGe epitaxial-base transistors. I. Materials, physics, andcircuits

A detailed review of SiGe epitaxial base technology is presented, which chronicles the progression of research from materials deposition through device and integration demonstrations, culminating in the first SiGe integrated circuit application. In part I of this paper, the requirements and processes for high-quality SiGe film preparation are discussed, with emphasis on fundamental principles. A detailed overview of SiGe HBT device design and implications for circuit applications is then presented     

Emerging SiGe HBT reliability issues for mixed-signal circuit applications

We review the emerging reliability issues associated with high-performance SiGe HBT technologies which are being increasingly deployed in a wide variety of mixed-signal circuit applications. For the purposes of this work, we define the concept of device "reliability" to be broader than its standard usage in the industry, to include all possible transistor degradation mechanisms, for all possible mixed-signal circuit designs, in any of the various intended mixed-signal applications. For instance, in addition to classical device reliability mechanisms associated with reverse emitter-base and high forward current density stress, new reliability issues for SiGe HBTs, including impact-ionization induced "mixed-mode" stress, scaling-induced breakdown voltage compression and operating point instabilities, geometrical scaling-induced low-frequency noise variations, and the impact of ionizing radiation on device and circuit reliability, are also addressed.     

The design and optimization of high-performance, double-polyself-aligned p-n-p technology

The device design and performance of double-poly self-aligned p-n-p technology, featuring a low-resistivity p⁺ subcollector, thin p-epi, and boron-doped poly-emitter are described. Device isolation is provided by deep and shallow trenches which reduce the collector-to-substrate capacitance while maintaining a high breakdown voltage (⩾40 V). By utilizing a shallow emitter process in conjunction with an optimized arsenic-base implant, devices with emitter-base junction depths as shallow as 20 nm and base widths of less than 100 nm were obtained. Cutoff frequencies of up to 27 GHz were obtained, and the AC performance was demonstrated by an NTL-gate delay of 36 ps and an active-pull-down (APD) ECL-gate delay of 20 ps. This high-performance p-n-p technology was developed to be compatible with existing double-poly n-p-n technologies. The matching speed of p-n-p devices opens up new opportunities for high-performance complementary bipolar circuits     

An Investigation of Negative Differential Resistance and Novel Collector–Current Kink Effects in SiGe HBTs Operating at Cryogenic Temperatures

In this paper, a new negative-differential-resistance (NDR) effect and a novel collector-current kink effect are investigated in the cryogenically operated SiGe heterojunction bipolar transistors (HBTs). Theory based on an enhanced positive-feedback mechanism associated with heterojunction barrier effect at deep cryogenic temperatures is proposed to explain both the observed NDR and the collector-current kink. The accumulated charge induced by the barrier effect acts at low temperatures to enhance the total collector-current, indirectly producing both phenomena. This theory is confirmed using the calibrated 2-D DESSIS simulations over temperature. These unique cryogenic effects also have significant impact on the ac performance of SiGe HBTs operating at high injection. Technology evolution plays an important role in determining the magnitude of the observed phenomena, and the scaling implications are addressed. In addition, the present NDR effect is also compared with previously reported NDR and hysteresis effects observed in highly scaled SiGe HBTs operating under forced-I_B-base bias. The input drive condition of the transistor during its use in circuits, either under pure forced-current bias or under pure forced-voltage bias, or more practically, somewhere in between, determines the magnitude of the observed NDR and is of potential concern for circuit designers and must be carefully modeled     

50-GHz self-aligned silicon bipolar transistors with ion-implantedbase profiles

Silicon bipolar transistors having cutoff frequencies from 40 to 50 GHz have been fabricated in a double -polysilicon self-aligned structure using a process which relies on ion implantation for the intrinsic base formation. The devices have nearly ideal DC characteristics, with breakdown voltages adequate for most digital applications. The results demonstrate that the performance limits of conventional implanted technologies are significantly higher than previously thought     

5 bit, silicon-based, X-band phase shifter using a hybrid pi/t high-pass/low-pass topology

A hybrid pi/t bit passive topology is presented to enable a significant reduction in the die area for a high-pass/low-pass phase shifter is presented. A hybrid-topology 5 bit digital X-band phase shifter was designed, fabricated and tested using a 200 GHz, 0.13 mum SiGe bipolar complementary metal oxide semiconductor (BiCMOS) technology. Size and performance characteristics are presented as a contrast to an all-pi phase shifter recently presented by Comeau et al. using the same SiGe BiCMOS technology and design goals. With similar bit passive performance to the all-pi design, the hybrid shifter allows for a total shifter die-area reduction of 50.5%. The absolute phase error of the shifter was less than plusmn13 from 8 to 12 GHz, with an average insertion loss of -20 dB.     

A scaled 0.25-μm bipolar technology using full e-beamlithography

The full leverage offered by electron-beam lithography has been exploited in a scaled 0.25-μm double polysilicon bipolar technology. Devices and circuits were fabricated using e-beam lithography for all mask levels with level-to-level overlays tighter than 0.06 μm. Ion implantation was used to form a sub-100-nm intrinsic base profile, and a novel in-situ doped polysilicon emitter process was used to minimize narrow emitter effects. Transistors with 0.25-μm emitter width have current gains above 80 and cutoff frequencies as high as 40 GHz. A record ECL gate delay of 20.8 ps at 4.82 mW has been measured together with a minimum power-delay product of 47 fJ (42.1 ps at 1.12 mW). These results demonstrate the feasibility and resultant performance leverage of aggressive scaling of conventional bipolar technologies     

On the profile design and optimization of epitaxial Si- andSiGe-base bipolar technology for 77 K applications. II. Circuitperformance issues

For pt.I see ibid., vol.40, no.3, p.525-41 (1993). The circuit performance issues associated with optimizing epitaxial Si- and SiGe-base bipolar technology for the liquid-nitrogen temperature environment are examined in detail. It is conclusively demonstrated that the notion that silicon-based bipolar circuits perform poorly at low temperatures is untrue. Transistor frequency response is examined both theoretically and experimentally, with particular attention given to the differences between SiGe and Si devices as a function of temperature. ECL and NTL ring oscillator circuits were fabricated for each of the four profiles described in pt.I. The minimum ECL gate delay for a SiGe base is essentially unchanged from its room-temperature value. ASTAP models were used to explore circuit operation under typical wire loading. The results indicate that epitaxial-base bipolar technology offers significant leverage for future cryogenic applications     

Test-retest reliability of alcohol measures: Is there a difference between Internet-based assessment and traditional methods?

This study compared Web-based assessment techniques with traditional paper-based methods of commonly used measures of alcohol use. Test-retest reliabilities were obtained, and tests of validity were conducted. A total of 255 participants were randomly assigned to 1 of 3 conditions: paper-based (P&P), Web-based (Web), or Web-based with interruption (Web-I). Follow-up assessments 1 week later indicated reliabilities ranging from .59 to .93 within all measures and across all assessment methods. Significantly high test-retest reliability coefficients support the use of these measures for research and clinical applications. Furthermore, no significant differences were found between assessment techniques, suggesting that Web-based methods are a suitable alternative to more traditional methods. This cost-efficient alternative has the advantage of minimizing data collection and entry errors while increasing survey accessibility. (PsycINFO Database Record (c) 2010 APA, all rights reserved)