Visual evoked potentials generator model derived from different spatial frequency stimuli of visual field regions and magnetic resonance imaging coordinates of V1, V2, V3 areas in man

Visual evoked potentials (VEPs) to pattern reversal vertical bar stimuli were recorded from 24 scalp derivations (including zygomatic and inion) referenced to digitally linked earlobes in 50 controls. 1, 2 and 4 cpd patterns were presented as full field (FF) stimuli, on Upper Hemifields (UHF) and Lower Hemifields (LHF), upper and lower quadrants and with the occlusion of central and peripheral UHF and LHF. VEPs to octant stimuli were also recorded with 2 cpd patterns. N1, P1 and N2 components were recorded from posterior and inion derivations with FF stimuli, from posterior derivations with LHF stimuli, only from inion leads with UHF stimuli, from derivations ipsilateral to stimuli with quadrants and octants, and consistently from midline derivations only with lower quadrants. Polarity inverted sequences (iN1-iP1-iN2) were recorded from the other scalp derivations, with similar latency and spatial frequency sensitivity as N1-P1-N2. Single Equivalent Dipole (ED) calculations were performed on N1 and P1 recorded in the different stimulus conditions. Our findings contradict previous hypotheses on VEP generators and contradict the predictions of VEPs polarity and distribution based on the "cruciform model" of VEPs generators. In order to explain the distribution of VEPs to upper and lower half fields and to quadrant and octants, we propose a model based on the position of the medial and occipito-polar surface of visual cortex in man.     

Detailed modeling of sub-100-nm MOSFETs based on Schro/spl uml/dinger DD per subband and experiments and evaluation of the performance gap to ballistic transport

We analyze in detail the requirements for the detailed physical modeling of nanoscale MOSFETs and show that Schro/spl uml/dinger drift-diffusion per subband simulations are adequate for the inverse modeling of bulk-Si MOSFETs with gate length down to 40 nm (channel length down to 26 nm) from their dc electrical characterization. We show that a proper treatment of quantum effects both in the channel and in the polysilicon gate through the direct solution of Schro/spl uml/dinger equation, and a transport model based on two-dimensional subbands are required for accurate and-after calibration-predictive modeling. The model is included in the NANOTCAD2D code (Curatola and Iannaccone, 2003). We also evaluate the performance gap to ballistic transport, by comparing the experiments with simulations based on a fully ballistic transport model on the devices structures extracted with the inverse modeling procedure.     

Direct Solution of the Boltzmann Transport Equation and Poisson–SchrÖdinger Equation for Nanoscale MOSFETs

We propose an efficient and fast algorithm to solve the coupled Poisson-Schrodinger and Boltzmann transport equations (BTE) in two dimensions. The BTE is solved in the relaxation time approximation within each subband obtained from the direct solution of the Schrodinger equation. The proposed approach, considering a subband-based transport formalism, allows to fully explore the entire range from drift-diffusion to ballistic regime in nanoscale field-effect transistors. Quantum effects are also fully taken into account by the direct solution of the Schrodinger equation. The model is implemented in the NanoTCAD2D device simulator and used to study the device performance of a 25-nm channel-length MOSFET. The influence of scattering on the electron distribution function and on device characteristics is analyzed in detail.     

A conformational model for the action of general anesthetics at the membrane level. II. Experimental observations on the effects of anesthetics on lipid fluidity and lipid protein interactions

We have investigated the effect of general anesthetics (the normal alcohol series up to pentanol, halothane, pentrane, ether, chloroform, and ketamine) on lipid fluidity of phospholipid vesicles and mitochondrial and erythrocyte membranes by using spin labels and fluorescent probes. The spin labels used (5- and 16-doxyl stearic acids) show that all anesthetics tested have a slight fluidizing effect on lipid vesicles but induce a very strong increase in mobility of spin labels in mitochondria and lower in erythrocyte ghosts. These results are interpreted as a labilization of lipid protein interactions at all depths in the bilayer. The fluorescent molecules ANS and NPN, which probe the glycerol region and the core of the bilayer respectively, show a decrease of fluorescence induced by alcohols, halothane, ether, chloroform in both lipid vesicles and membranes. The decrease of fluorescence is due to decreased quantum yield as shown by double reciprocal plots of probe fluorescence against membrane concentration. The fluorescence decrease is interpreted mainly as an increase in fluidity of the lipid bilayer and not as an increase of polarity of the probe environment. The effect of ketamine is that of fluidization in the bilayer core (NPN) but of increased rigidity in the glycerol region (ANS) perhaps due to the amphipathic character of this anesthetic, that is supposed to bind in the polar region of the bilayer. Pentrane also induces fluidization in the bilayer core (NPN) but has a peculiar effect near the surface (ANS): in lipid vesicles it induces a fluorescence decrease, whereas an increase is seen in mitochondrial membranes. These complex effects are considered as the result of some specific change in the lipid protein interactions in the region probed by ANS. The effects of anesthetics on maximal NPN fluorescence (Fo) have been usually found to be stronger in mitochondrial membranes than in lipid vesicles, thus confirming the results of the spin label studies, showing a labilization of lipid protein interactions induced by anesthetics. The effects on Fo of ANS, however, appear to be stronger in lipid vesicles than in membranes. These findings indicate that the presence of the proteins counteracts the perturbation induced by anesthetics at the level of the membrane surface, in contrast with the disruption of lipid protein interactions observed in the membrane hydrophobic areas.     

Bracken fern frond status classification in the Andes of southern Ecuador: combining multispectral satellite data and field spectroscopy

In the anthropogenic fire-disturbed ecosystem of the San Francisco Valley in the Andes of southeastern Ecuador, dense stands of an aggressive invasive weed, the southern bracken fern (Pteridium arachnoideum and Pteridium caudatum), dominate the landscape. To secure sustainable land management in the region, a comprehensive understanding of bracken spatial-distribution patterns and life cycle dynamics is crucial. We investigated the possibility of detecting bracken-infested areas and frond status (live, fungi-infected, and dead) by means of a high-resolution QuickBird scene from October 2010 and spectral signatures based on field spectroscopy. After image pre-processing, a two-step classification procedure first delineates the bracken-infested area by means of a maximum-likelihood hard classification. The probability-guided unmixing classifier with field-derived end-members is applied in the second step to obtain the fractional cover of the different frond statuses per pixel. The results showed that the areas infested by bracken could be distinguished from the other land-cover classes with high accuracy (overall accuracy of 0.9973). Also, the three frond statuses could be accurately classified at the sub-pixel level. The ‘dead’ class was the dominant frond status at the time of image acquisition (October 2010). We conclude that the extreme dry spell in October 2010 was particularly responsible for this dominance.     

Broadened Friedreich's ataxia phenotype after gene cloning. Minimal GAA expansion causes late-onset spastic ataxia

We describe three siblings from an Italian family affected by an autosomal recessive spinocerebellar degeneration. Gait ataxia, presenting between 38 and 45 years, was the first symptom in all three patients. Dysarthria, dysmetria, brisk tendon reflexes, extensor plantar response, and scoliosis were constant features. Disease progression was slow. Electrophysiologic studies demonstrated a slight reduction in sural nerve sensory action potential in only one patient. Analysis of GAA expansion within the X25 gene showed that patients were homozygous for the expansion, with the shorter expanded allele ranging from 120 to 156 triplets. The size of the GAA expansion may be smaller than we previously described. Such minimal expansions may result in atypical forms of Friedreich's ataxia.     

Susceptibility to in vitro lipid peroxidation of low density lipoproteins and erythrocyte membranes from liver cirrhotic patients

All retinoic acid receptors (RAR alpha, beta, gamma) have two isoforms, whose function is unknown. We now show that at least for RAR gamma, the isoforms are differentially distributed in the embryo. RAR gamma 1 and RAR gamma 2 are detected in the head region, whereas RAR gamma 2 is the sole isoform expressed in the tail region. Specifically, it is expressed in the chordoneural hinge, a region of the tailbud that has organizing properties. Treatment with high doses of retinoic acid (RA) reduces expression in this region. The results are discussed in terms of the known teratogenic effects of RA in the tail region.     

The Role of Volume Inversion on the Intrinsic RF Performance of Double-Gate FinFETs

Quantum interactions between the inversion channels of multigate devices and their resulting effects on charge distribution and carrier mobility are analyzed in this paper. Results of this analysis are then used to assess the role of volume inversion on the intrinsic RF performance of double-gate FinFETs. Thin-fin devices are beneficial to low-operating and high-performance powers, and wideband RF blocks, while they are detrimental to low-power cross coupled pair-based RF oscillators, and are more power hungry for high-performance oscillators. Also, we highlight that the intrinsic capacitance variation induced by the fin volume inversion dominates the power and wideband RF performance of FinFETs over the variation in carrier mobility. Accurate definition of fin below 8-10 nm will enable extreme RF performance devices