Starke Rosecrans Hathaway (1903–1984).

Presents an obituary for Starke Rosecrans Hathaway. Hathaway obtained both his undergraduate and master's level training with James P. Porter at Ohio University in Athens. He earned his undergraduate degree in psychology in 1927 and his master's degree in 1928. Porter persuaded him to remain in Athens as an instructor in psychology and physiology; by 1929 he held the rank of assistant professor. Hathaway's original interests in engineering persisted; he perfected and marketed a chronoscope, a psychogalvanometer, and electrical stimulation and recording devices for the study of neural processes. It is interesting to recall that one of the first uses to which Hathaway had put his psychogalvanometer was as a lie detector in helping police in Athens to solve a murder case. Hathaway's contributions to clinical psychology were recognized at the national level by the APA's Division of Clinical Psychology, which conferred its Distinguished Scientific Contribution Award in 1959 and elected him as its president in 1963. Elected to Sigma Xi and Phi Beta Kappa, an ABPP diplomate in clinical psychology, he was awarded honorary doctorates by Ohio University in 1966 and by Ohio State University in 1972. His honors were capped in 1977 when the APA conferred its award for Distinguished Contribution for Applications in Psychology. Hathaway retired from the University of Minnesota in 1971. He died at his home in Minneapolis on July 4, 1984. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

G-band (140-220 GHz) and W-band (75-110 GHz) InP DHBT medium power amplifiers

We report common-base medium power amplifiers designed for G-band (140-220 GHz) and W-band (75-110 GHz) in InP mesa double HBT technology. The common-base topology is preferred over common-emitter and common-collector topologies due to its superior high-frequency maximum stable gain (MSG). Base feed inductance and collector emitter overlap capacitance, however, reduce the common-base MSG. A single-sided collector contact reduces C_ce and, hence, improves the MSG. A single-stage common-base tuned amplifier exhibited 7-dB small-signal gain at 176 GHz. This amplifier demonstrated 8.7-dBm output power with 5-dB associated power gain at 172 GHz. A two-stage common-base amplifier exhibited 8.1-dBm output power with 6.3-dB associated power gain at 176 GHz and demonstrated 9.1-dBm saturated output power. Another two-stage common-base amplifier exhibited 11.6-dBm output power with an associated power gain of 4.5 dB at 148 GHz. In the W-band, different designs of single-stage common-base power amplifiers demonstrated saturated output power of 15.1 dBm at 84 GHz and 13.7 dBm at 93 GHz     

G-band (140-220-GHz) InP-based HBT amplifiers

We report tuned amplifiers designed for the 140-220-GHz frequency band. The amplifiers were designed in a transferred-substrate InP-based heterojunction bipolar transistor technology that enables efficient scaling of the parasitic collector-base junction capacitance. A single-stage amplifier exhibited 6.3-dB small-signal gain at 175 GHz. Three-stage amplifiers were subsequently fabricated with one design demonstrating 12.0-dB gain at 170 GHz and a second design exhibiting 8.5-dB gain at 195 GHz.     

InGaAs-InP DHBTs for increased digital IC bandwidth having a 391-GHz f/sub /spl tau// and 505-GHz f/sub max/

InP-In/sub 0.53/Ga/sub 0.47/As-InP double heterojunction bipolar transistors (DHBT) have been designed for use in high bandwidth digital and analog circuits, and fabricated using a conventional mesa structure. These devices exhibit a maximum 391-GHz f/sub /spl tau// and 505-GHz f/sub max/, which is the highest f/sub /spl tau// reported for an InP DHBT-as well as the highest simultaneous f/sub /spl tau// and f/sub max/ for any mesa HBT. The devices have been aggressively scaled laterally for reduced base-collector capacitance C/sub cb/. In addition, the base sheet resistance /spl rho//sub s/ along with the base and emitter contact resistivities /spl rho//sub c/ have been lowered. The dc current gain /spl beta/ is /spl ap/36 and V/sub BR,CEO/=5.1 V. The devices reported here employ a 30-nm highly doped InGaAs base, and a 150-nm collector containing an InGaAs-InAlAs superlattice grade at the base-collector junction. From this device design we also report a 142-GHz static frequency divider (a digital figure of merit for a device technology) fabricated on the same wafer. The divider operation is fully static, operating from f/sub clk/=3 to 142.0 GHz while dissipating /spl ap/800 mW of power in the circuit core. The circuit employs single-buffered emitter coupled logic (ECL) and inductive peaking. A microstrip wiring environment is employed for high interconnect density, and to minimize loss and impedance mismatch at frequencies >100 GHz.     

High-performance InP/In0.53Ga0.47As/InPdouble HBTs on GaAs substrates

InP/In_0.53Ga_0.47As/InP double heterojunction bipolar transistors (HBTs) were grown on GaAs substrates. A 140 GHz power-gain cutoff frequency f_max and a 207 GHz current-gain cutoff frequency f_τ were obtained, presently the highest reported values for metamorphic HBTs. The breakdown voltage BV_CEO was 5.5 V, while the dc current gain β was 76. High-thermal-conductivity InP metamorphic buffer layers were employed in order to minimize the device-thermal resistance     

Histologic-radiologic correlation of mammographically detected microcalcification in stereotactic core biopsies

The current paradigms for assessing fluorescence sensitivity on flow cytometers do not provide an adequate assessment of an instrument's ability to detect and measure weak fluorescence on stained particles. The capability to resolve dimly stained populations depends on two factors: the background noise (B), and the efficiency (Q) with which the fluorescence from the fluorochrome molecules are converted to photoelectrons. Any single statistical measure of fluorescence histogram distributions will be unable to uniquely characterize an instrument. Therefore, neither of the routinely used methods (detection threshold and delta channel) measure sensitivity completely and unambiguously. We show the limitations of these methods and propose that instrument sensitivity be characterized in terms of both background noise and detection efficiency in order to determine better the capability to detect and resolve weakly fluorescent particles.     

Personnel Psychology and Small Business.

The psychologist acting as consultant to a small concern operates under serious restrictions on his usual personnel methods. Often the selection of employees is only a small part of his general services. The number of new men being hired is small, the turnover rate may be infinitesimal, and even a survey of the men on the job may yield paltry information in comparison with usual employment studies. Ideally this sort of operation should be carried on at a national level with many or all of the local concerns of the same sort participating in the project. This would probably only be feasible through arrangements between an association of these concerns and some psychological consultants similar in scope to the Psychological Corporation. Lacking these connections, the psychologist locally still faces these persistent difficulties. In the opinion of the writer, there are three lines of evidence which can lend support to the consultant in making his judgments and recommendations. The author describes this evidence in detail. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

Harold Grier McCurdy (1909–1999).

Memorializes Harold Grier McCurdy, Kenan Professor Emeritus of Psychology at the University of North Carolina at Chapel Hill. McCurdy authored basic textbooks in the area of personality, including The Personal World: An Introduction to the Study of Personality (1961), and investigated the writings of William Shakespeare in The Personality of Shakespeare: A Venture in Psychological Method (1953). His involvement with the study of outstandingly creative individuals led McCurdy to try to better understand the sources of creativity by studying the childhoods of individuals who later displayed unquestioned genius. (PsycINFO Database Record (c) 2010 APA, all rights reserved)     

n/sup +/-InAs-InAlAs recess gate technology for InAs-channel millimeter-wave HFETs

We report a submicrometer, self-aligned recess gate technology for millimeter-wave InAs-channel heterostructure field effect transistors. The recess gate structure is obtained in an n/sup +/-InAs-InAlAs double cap layer structure with a citric-acid-based etchant. From molecular-beam epitaxy-grown material functional devices with 1000-, 500-, and 200-nm gate length were fabricated. From all three device geometries we obtain drive currents of at least 500 mA/mm, gate leakage currents below 2 mA/mm, and RF-transconductance of 1 S/mm. For the 200-nm gate length device f/sub /spl tau// and f/sub max/ are 162 and 137 GHz, respectively. For the 500-nm gate length device f/sub /spl tau// and f/sub max/ are 89 and 140 GHz, respectively. We observe scaling limitations at 200-nm gate length, in particular a negative threshold voltage shift from -550 to -810 mV, increased kink-effect, and a high gate-to-drain capacitance of 0.5 pF/mm. The present limitations to device scaling are discussed.     

George Schlager Welsh (1918–1990): Obituary.

Memorializes George S. Welsh, highlighting his development of a nonverbal MMPI and the Welsh Figure Preference Test, as well as his academic career at the University of North Carolina at Chapel Hill and the North Carolina Governor's School for the academically and artistically talented. Welsh also introduced the personality dimensions of intellectence and origence. (PsycINFO Database Record (c) 2010 APA, all rights reserved)