Silk-elastinlike protein polymer hydrogels: Influence of monomer sequence on physicochemical properties

Silk-elastinlike protein polymer, SELP-815K, with eight silk and fifteen elastin units and a lysine (K) modified elastin, was genetically engineered with longer silk and elastin units compared to existing hydrogel forming analogs (SELP-415K and SELP-47K). Hydrogels of the three SELPs (with similar MWs) were investigated for their structure-function relationships. Results indicate that equilibrium swelling ratio in these hydrogels is a function of polymer structure, concentration, cure time and ionic strength of media. Swelling was not influenced by the changes in pH. Storage moduli observed by dynamic mechanical analysis and the Debye-Bueche correlation length obtained from small-angle neutron scattering provided structural insight that suggests the cross-linking densities in these hydrogels follow the order SELP-47K > SELP-815K > SELP-415K. These results allude to the importance of the length of elastin blocks in governing the spacing of the cross-linked hydrogel network and that of silk in governing the stiffness of their 3-dimensional structures.     

Effect of reformulated fuel strategy on compression ignition engine compatibility using antioxidant additive and clean Karanja methyl ester

Clean Technologies and Environmental Policy - The present work aims at investigating the compatibility of antioxidant with biodiesel through the tribological assessment of a compression ignition...     

Monodispersed and Stable Nano Copper(0) from Copper‐ Aluminium Hydrotalcite: Importance in C?C Couplings of Deactivated Aryl Chlorides

A simple one‐step approach for the preparation of highly monodispersed nano copper(0) stabilized on alumina [Cu(0)/Al₂O₃] by thermal reduction of copper‐aluminium hydrotalcite (Cu‐Al HT) under a hydrogen atmosphere is described. The transformation of Cu‐Al HT to Cu(0)/Al₂O₃ occurrs via dehydroxylation of divalent and trivalent metal hydroxides and decarboxylation of carbonate anions present in the interlayers of hydrotalcite, as confirmed by XPS, XANES, XRD and TEM analysis. Cu(0)/Al₂O₃ nano composites were used as an efficient catalyst in the C C coupling of deactivated aryl chlorides. The high efficiency and reusability exhibited by Cu(0)/Al₂O₃ outline its potential as an alternative over traditional noble metal‐based catalysts in C C coupling reactions.     

Electrochemical synthesis of ZnO branched submicrorods on carbon fibers and their feasibility for environmental applications

We investigated the structural and optical properties of the hierarchically integrated zinc oxide (ZnO) branched submicrorods on carbon fibers (ZOCF) by scanning/transmission electron microscopy, X-ray diffraction, and photoluminescence (PL) measurements. The ZnO submicrorods were facilely synthesized by an electrochemical deposition method on polyacrylonitrile-based carbon fiber sheets used as a substrate. After coating the ZnO seed layer on the surface of the carbon fibers, ZnO submicrorods were densely grown on the nuclei sites of the seed layer. The prepared ZOCF samples exhibited high crystallinity and good PL properties. A feasibility for environmental application in Pb(II) removal from aqueous solutions was also studied. The ZOCF adsorbent exhibited an excellent maximum adsorption capacity of 245.07 mg g⁻¹, which could be practically used in Pb(II) removal from water. These fabricated ZOCFs are potentially useful for multifunctional and environmental devices.     

Charge density and pH effects on polycation adsorption on poly-Si, SiO2, and Si3N4 films and impact on removal during chemical mechanical polishing

The pH-dependent interactions of five aqueous abrasive-free polycationic solutions, all at a concentration of 250 ppm, with poly-Si, SiO(2), and Si(3)N(4) films and IC1000 polishing pads used in chemical mechanical polishing have been investigated and compared with the interaction of poly(diallyldimethyl ammonium chloride) (PDADMAC) that was investigated recently. Three of the polycationic solutions, poly(dimethylamine-co-epichlorohydrin-co-ethylenediamine), poly(allylamine), and poly(ethylene imine) (PEI) enhance poly-Si removal rates (RRs) to the range of about 500 to 600 nm/min at pH 10. In contrast, poly(acrylamide) (PAA) suppressed poly-Si RRs to about 50 nm/min, whereas with a copolymer of PAA and PDADMAC, the RRs were lower than those obtained with PDADMAC but higher than those obtained with PAA. For all the polycationic solutions, the RRs of both SiO(2), and Si(3)N(4) films were ~0 nm/min. These solutions offer a low-defect option for the processing of emerging FinFET devices. The variation in the RR magnitude and dependence on pH among the different polycations is related to the relative charge density of the polycations as well as the films being polished, consistent with ζ potential data. Based on the ζ potential data and earlier published reports, it is suggested that the strong polycation-mediated bridging interactions between the polarized and weakened Si-Si bonds of the poly-Si surface and the polyurethane IC 1000 pad are responsible for the high poly-Si RRs.     

Accurate Extraction of Schottky Barrier Height and Universality of Fermi Level De-Pinning of van der Waals Contacts

Due to Fermi level pinning (FLP), metal-semiconductor contact interfaces result in a Schottky barrier height (SBH), which is usually difficult to tune. This makes it challenging to efficiently inject both electrons and holes using the same metal—an essential requirement for several applications, including light-emitting devices and complementary logic. Interestingly, modulating the SBH in the Schottky–Mott limit of de-pinned van der Waals (vdW) contacts becomes possible. However, accurate extraction of the SBH is essential to exploit such contacts to their full potential. In this study a simple technique is proposed to accurately estimate the SBH at the vdW contact interfaces by circumventing several ambiguities associated with SBH extraction. Using this technique on several vdW contacts, including metallic 2H-TaSe₂, semi-metallic graphene, and degenerately doped semiconducting SnSe₂, it is demonstrated that vdW contacts exhibit a universal de-pinned nature. Superior ambipolar carrier injection properties of vdW contacts are demonstrated (with Au contact as a reference) in two applications, namely, a) pulsed electroluminescence from monolayer WS₂ using few-layer graphene (FLG) contact, and b) efficient carrier injection to WS₂ and WSe₂ channels in both n-type and p-type field effect transistor modes using 2H-TaSe₂ contact.     

Copper Nanoparticles from Copper Aluminum Hydrotalcite: An Efficient Catalyst for Acceptor‐ and Oxidant‐Free Dehydrogenation of Amines and Alcohols

An efficient and simple process for the preparation of stable nanocopper(0) on alumina [Cu(0)/Al₂O₃] from the inorganic composite precursor copper aluminum hydrotalcite (Cu‐Al HT) by a chemical reduction method is described. Cu(0)/Al₂O₃ was employed as an efficient catalyst in the acceptor‐ and oxidant‐free dehydrogenation of various amines and alcohols to their corresponding dehydrogenated products in good to excellent yields. The stability of Cu(0)/Al₂O₃ was assessed by studying its recoverability and reusability in the dehydrogenation of amines and alcohols for up to five cycles.

     

Characterization and modeling of AlGaN/GaN MOS capacitor with leakage for large signal transistor modeling

Dual mode AlGaN/GaN metal oxide semiconductor (MOS) heterostructure field-effect transistor (HFET) devices were fabricated and characterized. In HFET mode of operation the devices showed an f/sub t//spl middot/L/sub g/ product of 12GHz/spl middot//spl mu/m at Vgs=-2 V. The AlGaN devices showed formation of an accumulation layer under the gate in forward bias and a f/sub t//spl middot/L/sub g/ product of 6GHz/spl middot//spl mu/m was measured at Vgs=5 V. A novel piecewise small signal model for the gate capacitance of MOS HFET devices is presented and procedures to extract the capacitance in presence of gate leakage are outlined. The model accurately fits measured data from 45MHz to 10GHz over the entire bias range of operation of the device.     

Finite element modeling on electromigration of solder joints in wafer level packages

This work studies the electromigration of solder joints in an encapsulated copper post wafer level package (WLP) by finite element modeling. Experimental data showed that the electromigration failure occurs in solder joints on the printed circuit board (PCB) side due to the current crowding. In order to improve the electromigration performance on the PCB side with a copper post WLP, two new line-to-bump geometry designs are proposed. Coupled electro-thermal finite element modeling is performed to obtain the electrical and thermal fields simultaneously. The ionic flux from electron wind and thermal response is calculated based on finite element solutions. The divergence of the total flux, which is the sum of the divergence of electromigration and thermomigration, is extracted at the critical locations in solder joints. Results show that the new proposed design structures can reduce the maximum current density by 19%, and the divergence of the total ionic flux by 42%. Thermal gradient is very small in solder joints, therefore, the main driving force for electromigration failures comes from the electron wind. The finite element results on mesh dependency are discussed in this paper.